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21 Jul 2008

Volume 93, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 031101 (2008); http://dx.doi.org/10.1063/1.2959092 (3 pages)

Di Xu, Kevin P. Chen, Kris Ohlinger, and Yuankun Lin
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Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

Chuan Wang, Koungmin Ryu, Alexander Badmaev, Nishant Patil, Albert Lin, Subhasish Mitra, H.-S. Philip Wong, and Chongwu Zhou

Appl. Phys. Lett. 93, 033101 (2008); http://dx.doi.org/10.1063/1.2956677 (3 pages) | Cited 17 times

Online Publication Date: 21 July 2008

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In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μA/μm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p-type aligned nanotube devices into n-type. These devices were further utilized to demonstrate various logic circuits, including p-type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Kk Junction diodes
85.40.Ry Impurity doping, diffusion and ion implantation technology

Back-gate ZnO nanowire field-effect transistors each with a top Ω shaped Au contact

W. Q. Yang, L. Dai, R. M. Ma, C. Liu, T. Sun, and G. G. Qin

Appl. Phys. Lett. 93, 033102 (2008); http://dx.doi.org/10.1063/1.2959075 (3 pages) | Cited 8 times

Online Publication Date: 21 July 2008

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We have fabricated depletion and enhancement modes (D-mode and E-mode) back-gate metal-insulator-semiconductor field-effect-transistors (MISFETs), using two kinds of ZnO nanowires (NWs) labeled as A and B, respectively. The NWs A and B were synthesized via the vapor phase transport method with ZnO/C admixture and Zn as the sources, respectively. Each of the MISFETs has a top Ω shaped Au contact on the conductive channel. Compared to that without any top Au contact, the on/off ratio ( ∼ 106) of the ZnO NW A MISFET increases by a factor of 103, and is the highest one among the back-gate ZnO NW MISFETs ever reported; while the ZnO NW B MISFET changes from D-mode to E-mode when a top Au contact is added. The effects of the Au/ZnO NW contacts on the performances of the NW A and B MISFETs were discussed.
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85.30.Tv Field effect devices

Chromium and tantalum site substitution patterns in Ni3Al (L12) γ′-precipitates

Christopher Booth-Morrison, Zugang Mao, Ronald D. Noebe, and David N. Seidman

Appl. Phys. Lett. 93, 033103 (2008); http://dx.doi.org/10.1063/1.2956398 (3 pages) | Cited 12 times

Online Publication Date: 21 July 2008

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The site substitution behavior of Cr and Ta in the Ni3Al (L12)-type γ′-precipitates of a Ni–Al–Cr–Ta alloy is investigated by atom-probe tomography (APT) and first-principles calculations. Measurements of the γ′-phase composition by APT suggest that Al, Cr, and Ta share the Al sublattice sites of the γ′-precipitates. The calculated substitutional energies of the solute atoms at the Ni and Al sublattice sites indicate that Ta has a strong preference for the Al sites, while Cr has a weak Al site preference. Furthermore, Ta is shown to replace Cr at the Al sublattice sites of the γ′-precipitates, altering the elemental phase partitioning behavior of the Ni–Al–Cr–Ta alloy.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
64.75.Op Phase separation and segregation in alloying
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Conductivity enhancement of carbon nanotube composites by electrolyte addition

Hui-Ching Li, Sheng-Yi Lu, Sen-Hong Syue, Wen-Kuang Hsu, and Shih-Chin Chang

Appl. Phys. Lett. 93, 033104 (2008); http://dx.doi.org/10.1063/1.2963475 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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The conductivity of carbon nanotubes and polyvinyl alcohol composites is significantly improved by addition of Fe2(SO4)3. The coordinated cations between nanotubes play a crucial role in lowering intertube hopping magnitude.
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81.05.ub Fullerenes and related materials
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems

Silicon nanowires for rechargeable lithium-ion battery anodes

Kuiqing Peng, Jiansheng Jie, Wenjun Zhang, and Shuit-Tong Lee

Appl. Phys. Lett. 93, 033105 (2008); http://dx.doi.org/10.1063/1.2929373 (3 pages) | Cited 65 times

Online Publication Date: 23 July 2008

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Large-area, wafer-scale silicon nanowire arrays prepared by metal-induced chemical etching are shown as promising scalable anode materials for rechargeable lithium battery. In addition to being low cost, large area, and easy to prepare, the electroless-etched silicon nanowires (SiNWs) have good conductivity and nanometer-scale rough surfaces; both features facilitate charge transport and insertion/extraction of Li ions. The electroless-etched SiNWs anode showed larger charge capacity and longer cycling stability than the conventional planar-polished Si wafer.
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82.45.Yz Nanostructured materials in electrochemistry
68.47.Fg Semiconductor surfaces
82.47.Aa Lithium-ion batteries
82.45.Fk Electrodes
82.45.Vp Semiconductor materials in electrochemistry
73.63.Nm Quantum wires

Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

C. Riedl, A. A. Zakharov, and U. Starke

Appl. Phys. Lett. 93, 033106 (2008); http://dx.doi.org/10.1063/1.2960341 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the math-point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy.
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68.55.jd Thickness
61.46.-w Structure of nanoscale materials
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs1−xSbx layer

Wen-Hao Chang, Yu-An Liao, Wei-Ting Hsu, Ming-Chih Lee, Pei-Chin Chiu, and Jen-Inn Chyi

Appl. Phys. Lett. 93, 033107 (2008); http://dx.doi.org/10.1063/1.2964191 (3 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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Carrier dynamics of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1−xSbx layer were investigated by time-resolved photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment at the GaAsSb–InAs interface. Different recombination paths have been clarified by temperature dependent measurements. At lower temperatures, the long-range recombination between the QD electrons and the holes trapped by localized states in the GaAsSb layer is important, resulting in a non-single-exponential decay. At higher temperatures, optical transitions are dominated by the short-range recombination with the holes confined to the band-bending region surrounding the QDs.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Resistance-pressure sensitivity and a mechanism study of multiwall carbon nanotube networks/poly(dimethylsiloxane) composites

C. H. Hu, C. H. Liu, L. Z. Chen, Y. C. Peng, and S. S. Fan

Appl. Phys. Lett. 93, 033108 (2008); http://dx.doi.org/10.1063/1.2961028 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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In this work, we explored the electrical resistance-pressure sensitivity of multiwall carbon nanotube (MWNT) networks/poly(dimethylsiloxane) (PDMS) composites and proposed a deformation-induced property transition mechanism of the nanotubes to explain this behavior. The thermoelectric coefficients of the MWNT networks/PDMS composites and MWNT mat under pressure were also measured and discussed to support our proposition. Our results revealed that the relative resistances of MWNT networks/PDMS composites with lower MWNT loadings are more sensitive on the applied pressure. Furthermore, the I-V characteristic of the MWNT networks/PDMS composites modulated with pressure on one side has shown a well rectified behavior.
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73.40.Ei Rectification
72.80.Tm Composite materials
72.20.Pa Thermoelectric and thermomagnetic effects
81.05.Qk Reinforced polymers and polymer-based composites
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Electric charging and nanostructure formation in polymeric films using combined amplitude-modulated atomic force microscopy-assisted electrostatic nanolithography and electric force microscopy

Michael A. Reagan, Dmytro Kashyn, Shane Juhl, Richard A. Vaia, and Sergei F. Lyuksyutov

Appl. Phys. Lett. 93, 033109 (2008); http://dx.doi.org/10.1063/1.2957985 (3 pages) | Cited 5 times

Online Publication Date: 24 July 2008

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A hybrid technique, combining lithography which exploits atomic force microscope tip manipulation with modified electric force microscopy was used to study surface electric charging (deposition and evolution) of polymethyl methacryalate and polystyrene films. Upon charging the films past a threshold voltage, two distinct regimes were observed: (1) stable feature formation related to electric breakdown and mass transport resulting in stable film deformation due to the negative surface charging (negative tip bias) and (2) no stable feature formation regime attributed to viscoelastic deformation of polymer surface followed by the surface relaxation in the case of positive surface charging (positive tip bias).
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73.61.Ph Polymers; organic compounds
68.55.am Polymers and organics
61.41.+e Polymers, elastomers, and plastics
81.16.Nd Micro- and nanolithography
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Ultrasensitive immunoassay for prostate specific antigen using scanning tunneling microscopy-based electrical detection

Jeong-Woo Choi, Byung-Keun Oh, Yong-Hark Jang, and Da-Yeon Kang

Appl. Phys. Lett. 93, 033110 (2008); http://dx.doi.org/10.1063/1.2963191 (3 pages) | Cited 5 times

Online Publication Date: 25 July 2008

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We characterized a vertically configured electrical detection system that used scanning tunneling microscopy (STM) to detect antigen-antibody binding. This technique could be used to easily construct a multiple measurement system in a protein chip. We utilized immunocomplexes comprised of our model protein, prostate specific antigen (PSA), corresponding antibody fragments, and gold nanoparticle-antibody conjugates. The electrical tunneling current between the STM tip and these complexes exhibited a peaklike pulse, the frequency of which depended on the surface density of the bound complexes. We could therefore quantitatively measure PSA concentrations as low as 10 fg/mL using periodogram analysis of this peak frequency.
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87.64.Dz Scanning tunneling and atomic force microscopy
87.85.Rs Nanotechnologies-applications
87.15.K- Molecular interactions; membrane-protein interactions
87.15.Fh Bonding; mechanisms of bond breakage
87.15.Pc Electronic and electrical properties
87.85.-d Biomedical engineering

Determination of the stiffness of cellulose nanowhiskers and the fiber-matrix interface in a nanocomposite using Raman spectroscopy

Rafeadah Rusli and Stephen J. Eichhorn

Appl. Phys. Lett. 93, 033111 (2008); http://dx.doi.org/10.1063/1.2963491 (3 pages) | Cited 32 times

Online Publication Date: 25 July 2008

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The stiffness of 10 nm diameter cellulose nanowhiskers is reported. These whiskers are produced by acid hydrolysis. These whiskers are dispersed in epoxy resin and placed on the surface of a beam of the same material and deformed in tension and compression using a four-point bending device. By following the molecular deformation of the whiskers using Raman spectroscopy it is shown that, by theoretical models of their dispersion and matrix reinforcement, their stiffness can be derived. The effects of debonding, matrix yielding, and buckling of whiskers are also discussed using this method as a means for studying nanocomposite materials.
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81.05.Qk Reinforced polymers and polymer-based composites
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
81.40.Lm Deformation, plasticity, and creep
62.20.mq Buckling
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Ion bombardment effects on ZnO nanowires during plasma treatment

H.-W. Ra, K. S. Choi, C. W. Ok, S. Y. Jo, K. H. Bai, and Y. H. Im

Appl. Phys. Lett. 93, 033112 (2008); http://dx.doi.org/10.1063/1.2965109 (3 pages) | Cited 11 times

Online Publication Date: 25 July 2008

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We present the effects of ion bombardment on ZnO nanowires caused by their exposure to an Ar inductively coupled plasma. The conductivity of the individual ZnO nanowire was increased in up to 3 orders of magnitude due to increase in both carrier concentration and mobility, with a substantial negative shift in the threshold gate voltage also being observed. The drastic changes in the electrical properties were attributed to the decrease in species adsorbed on the surface, as well as to the increase in oxygen vacancies near the surface caused by ion bombardment.
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73.63.Nm Quantum wires
52.77.-j Plasma applications
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
72.20.Fr Low-field transport and mobility; piezoresistance

Localized surface plasmon polaritons in Ag/SiO2/Ag plasmonic thermal emitter

Yi-Han Ye, Yu-Wei Jiang, Ming-Wei Tsai, Yi-Tsung Chang, Chia-Yi Chen, Dah-Ching Tzuang, Yi-Ting Wu, and Si-Chen Lee

Appl. Phys. Lett. 93, 033113 (2008); http://dx.doi.org/10.1063/1.2958215 (3 pages) | Cited 6 times

Online Publication Date: 25 July 2008

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The reflection dispersion relation and emission spectra of Ag/SiO2/Ag trilayer plasmonic thermal emitters with different lattice constant and Ag line width were investigated. The top Ag film is perforated with parallel line-shape hole array. The induced Ag/SiO2 surface plasmons at both top and bottom Ag/SiO2 interface are found coupled together. The coupling effect results in the localized surface plasmon polaritons confined at the top Ag/SiO2 interface which exhibit the Fabry–Pérot resonance. The thermal emission peak position coincides with the reflection minimum in the dispersion relation and shifts to long wavelength as the Ag line width increases, which proves that the emission is due to the excitation of localized surface plasmon polaritons. Moreover, the emitted light is polarized perpendicular to the parallel metal lines.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
61.66.Fn Inorganic compounds
78.55.Hx Other solid inorganic materials
68.55.A- Nucleation and growth

Room-temperature ferromagnetism in single crystal Fe1.7Ge thin films of high thermal stability grown on Ge(111)

R. Jaafar, Y. Nehme, D. Berling, J. L. Bubendorff, A. Mehdaoui, C. Pirri, G. Garreau, and C. Uhlaq-Bouillet

Appl. Phys. Lett. 93, 033114 (2008); http://dx.doi.org/10.1063/1.2961007 (3 pages) | Cited 3 times

Online Publication Date: 25 July 2008

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We report on the epitaxial growth of ultrathin ferromagnetic Fe1.7Ge layers on Ge(111) wafer. These single crystal intermetallic layers adopt the InNi2 (B82) crystallographic structure. They are ferromagnetic with a Curie temperature well above room temperature. The interface between the ferromagnet layer and the Ge wafer is of high perfection. Interestingly, the annealing of the sample up to 300 °C alters neither the crystallographic structure, nor the interface quality, nor the magnetic properties but leads to a nearly perfect smoothening of the germanide layer surface. This high thermal robustness should open the way for the growth of fully epitaxial iron germanide/Ge hybrid structures.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.35.Ct Interface structure and roughness
81.40.Gh Other heat and thermomechanical treatments
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Bb Fe and its alloys
75.70.Ak Magnetic properties of monolayers and thin films
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