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21 Jul 2008

Volume 93, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 93, 031101 (2008); http://dx.doi.org/10.1063/1.2959092 (3 pages)

Di Xu, Kevin P. Chen, Kris Ohlinger, and Yuankun Lin
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Effect of Ag interlayer on the optical and passivation properties of flexible and transparent Al2O3/Ag/Al2O3 multilayer

Jin-A. Jeong, Han-Ki Kim, and Min-Su Yi

Appl. Phys. Lett. 93, 033301 (2008); http://dx.doi.org/10.1063/1.2955841 (3 pages) | Cited 7 times

Online Publication Date: 21 July 2008

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We report on the characteristics of a flexible Al2O3/Ag/Al2O3 multilayer passivation grown on a polyethylene terephthalate (PET) substrate as a function of Ag thickness. Due to the surface plasmon resonance (SPR) effects and the ductility of the Ag layer that is sandwiched between the dielectric Al2O3 layer, the flexible Al2O3/Ag/Al2O3 multilayer passivation exhibits a high transparency of 86.44% and improved flexibility at a Ag thickness of 10 nm. We found that SPR effects in the Ag layer occur at the transition region from distinct islands to a continuous film at a critical thickness ( ∼ 10 nm). In addition, the water vapor transmission rate of the Al2O3/Ag/Al2O3/PET sample decreased as the thickness of the Ag layer increased. Using synchrotron x-ray scattering and field emission scanning electron microscopy, we suggest a possible mechanism to explain the SPR in the Ag layer of the flexible and transparent Al2O3/Ag/Al2O3 multilayer passivation.
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81.65.Rv Passivation
68.65.Ac Multilayers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
78.70.Ck X-ray scattering
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Multifolded polymer solar cells on flexible substrates

Yinhua Zhou, Fengling Zhang, Kristofer Tvingstedt, Wenjing Tian, and Olle Inganäs

Appl. Phys. Lett. 93, 033302 (2008); http://dx.doi.org/10.1063/1.2957995 (3 pages) | Cited 20 times

Online Publication Date: 21 July 2008

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Arrays of reflective multijunction polymer solar cell were demonstrated by folding four separated cells fabricated on a single plastic substrate using conducting polymer poly(3, 4-ethylene-dioxythiophene):polystyrenesulfonate as an anode. The combination of flexible substrate and polymer solar cells (PSCs) makes the construction of multifolded PSCs on one substrate possible. The power conversion efficiency (PCE) of the multifolded reflective PSCs was enhanced by 62%±12% with the folded opening angle of 30° compared to the planar cells. In series connection of four solar cells, an open-circuit voltage (Voc) of 3.65 V was obtained.
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84.60.Jt Photoelectric conversion
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Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Dae Sung Chung, Dong Hoon Lee, Chanwoo Yang, Kipyo Hong, Chan Eon Park, Jong Won Park, and Soon-Ki Kwon

Appl. Phys. Lett. 93, 033303 (2008); http://dx.doi.org/10.1063/1.2958213 (3 pages) | Cited 7 times

Online Publication Date: 21 July 2008

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To elucidate the origin of the high field-effect mobility ( ≈ 0.02 cm2/V s) of amorphous poly[(1,2-bis-(2′-thienyl)vinyl-5′,5″-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated the current density–voltage (J-V) and mobility–voltage (μ-V) relationships as a function of temperature. By using the power law model and the Gaussian hopping model, we determined a characteristic trap energy of 67 meV, an energetic disorder parameter of 64 meV, and a total trap density of 2.5×1016 cm−3, comparable to that of poly(3-hexylthiophene). We conclude that the relatively low trap density, which originates from the grain-boundary-free amorphous nature of the semiconductor, enables this high field-effect mobility.
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72.20.Ht High-field and nonlinear effects
72.20.Ee Mobility edges; hopping transport
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.80.Ng Disordered solids
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Charge trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment

T. Miyadera, S. D. Wang, T. Minari, K. Tsukagoshi, and Y. Aoyagi

Appl. Phys. Lett. 93, 033304 (2008); http://dx.doi.org/10.1063/1.2949746 (3 pages) | Cited 25 times

Online Publication Date: 21 July 2008

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The current instability of pentacene thin film transistors is described by the energetic distribution of the barrier height for the trapping of mobile charges at the organic/insulator interface. The trapping energy was quantitatively analyzed by measuring the temperature dependence of current decay, which follows a stretched exponential function. The distribution of the barrier becomes higher and narrower by the use of a self assembled monolayer (SAM) on the insulator surface, whereas the pentacene film morphology has little influence on the trapping barriers. The increase in the barrier height in the SAM-treated device suppresses charge trapping, resulting in stable device operation.
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85.30.Tv Field effect devices
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High mobility electron-conducting thin-film transistors by organic vapor phase deposition

C. Rolin, K. Vasseur, S. Schols, M. Jouk, G. Duhoux, R. Müller, J. Genoe, and P. Heremans

Appl. Phys. Lett. 93, 033305 (2008); http://dx.doi.org/10.1063/1.2958229 (3 pages) | Cited 10 times

Online Publication Date: 21 July 2008

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In this letter, we report on the growth of thin films of N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59±4% and deposition rates up to 15 Å/s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3 cm2/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed.
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85.30.Tv Field effect devices
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Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits

Dhananjay, Chun-Wei Ou, Chuan-Yi Yang, Meng-Chyi Wu, and Chih-Wei Chu

Appl. Phys. Lett. 93, 033306 (2008); http://dx.doi.org/10.1063/1.2949872 (3 pages) | Cited 7 times

Online Publication Date: 21 July 2008

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In this Letter, ambipolar transport properties of a bilayer of In2O3 and a pentacene heterostructure have been realized. While In2O3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO2/p-Si substrates. However, when a bilayer of In2O3/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.
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85.30.Tv Field effect devices
85.30.Pq Bipolar transistors
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Ordered bulk heterojunction solar cells with vertically aligned TiO2 nanorods embedded in a conjugated polymer

C. Y. Kuo, W. C. Tang, C. Gau, T. F. Guo, and D. Z. Jeng

Appl. Phys. Lett. 93, 033307 (2008); http://dx.doi.org/10.1063/1.2937472 (3 pages) | Cited 36 times

Online Publication Date: 22 July 2008

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Vertically aligned TiO2 nanorods were prepared by its sol-gel which is spun coat onto aluminum anodic oxide template pregrown on an indium tin oxide glass substrate. The poly(3-hexylthiophene) (P3HT), a conjugate polymer infiltrated into the nanorod arrays, and the combined system were used as the active layer. The nanorods/P3HT solar cell with cell size of 0.06 cm2 demonstrated a power conversion efficiency of 0.512% while the bilayer TiO2 film/P3HT cell was 0.12%. The current work provides fabrication method for a stable well aligned nanorods/polymer hybrid solar cell production.
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84.60.Jt Photoelectric conversion
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors

Kouji Suemori, Sei Uemura, Manabu Yoshida, Satoshi Hoshino, Noriyuki Takada, Takehito Kodzasa, and Toshihide Kamata

Appl. Phys. Lett. 93, 033308 (2008); http://dx.doi.org/10.1063/1.2957987 (3 pages) | Cited 18 times

Online Publication Date: 22 July 2008

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We have investigated the influence of the surface roughness of an insulator on the threshold voltage shift caused by gate bias stressing in organic field-effect transistors (OFETs). Our investigation was conducted for OFETs with SiO2 insulators. We observed that the threshold voltage shift is extremely sensitive to changes in the fine roughness of the SiO2 surface; the shift increased with the roughness. The large shift in OFETs with rough SiO2 insulators can be attributed to lattice distortion in pentacene layers deposited on rough SiO2 surfaces.
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85.30.Tv Field effect devices
68.35.Ct Interface structure and roughness
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Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film

Heonjun Ha and Ohyun Kim

Appl. Phys. Lett. 93, 033309 (2008); http://dx.doi.org/10.1063/1.2960998 (3 pages) | Cited 17 times

Online Publication Date: 22 July 2008

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This letter describes the fabrication and electric characteristics of nonvolatile memory devices from a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film sandwiched between Al and indium tin oxide electrodes. These devices have bipolar switching characteristics. The on and off voltages are 0.67 and −1.65 V, respectively. The on/off current ratio of the device is up to 103. These characteristics were caused by the formation and destruction of current paths by the reduction and oxidation of PEDOT chains in a PEDOT:PSS thin film. Also, the write-read-erase-read cycle test was operated over 104 times and the retention time was up to 16 h.
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84.30.Sk Pulse and digital circuits
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Efficient dye-sensitized solar cells using electrospun TiO2 nanofibers as a light harvesting layer

Surawut Chuangchote, Takashi Sagawa, and Susumu Yoshikawa

Appl. Phys. Lett. 93, 033310 (2008); http://dx.doi.org/10.1063/1.2958347 (3 pages) | Cited 31 times

Online Publication Date: 22 July 2008

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Titanium dioxide (TiO2) nanofibers were fabricated directly onto thick nanoparticle electrodes by using electrospinning and sol-gel techniques. After calcination, the anatase TiO2 nanofibers obtained exhibited a one-dimensional structure of high crystallinity and average diameter of ∼ 250 nm. Dye (N719) sensitized photoelectrochemical cells comprised of a nanoparticle/nanofiber electrode were fabricated. An IPCE of 85% at the wavelength of 540 nm with conversion efficiencies of 8.14% and 10.3% (for areas of 0.25 and 0.052 cm2, respectively) were obtained under 1.5 AM (100 mW/cm2) illumination.
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84.60.Jt Photoelectric conversion
82.45.Fk Electrodes
81.16.-c Methods of micro- and nanofabrication and processing
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices
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Scanning optical probe microscopy with submicrometer resolution using an organic photodetector

Kwang H. An, Brendan O’Connor, Kevin P. Pipe, Yiying Zhao, and Max Shtein

Appl. Phys. Lett. 93, 033311 (2008); http://dx.doi.org/10.1063/1.2963033 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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A high-resolution scanning optical microscopy technique is demonstrated, in which an organic photodetector on a silicon-based scanning probe cantilever scans a sample, simultaneously recording optical and topographic data with submicrometer resolution, while showing no measurable degradation during the scan. Potential applications of the probe include characterization of optoelectronic materials and devices, as well as simultaneous topographic and fluorescence microscopy of biological samples. Extension to these applications is aided by the fact that the probe is compatible with conventional atomic force microscopy systems and does not suffer some of the practical difficulties of existing near-field scanning optical microscopy systems.
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07.79.Fc Near-field scanning optical microscopes
07.79.Lh Atomic force microscopes
87.64.Dz Scanning tunneling and atomic force microscopy
87.64.mt Near-field scanning
85.60.Gz Photodetectors (including infrared and CCD detectors)
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On the width of the recombination zone in ambipolar organic field effect transistors

M. Kemerink, D. S. H. Charrier, E. C. P. Smits, S. G. J. Mathijssen, D. M. de Leeuw, and R. A. J. Janssen

Appl. Phys. Lett. 93, 033312 (2008); http://dx.doi.org/10.1063/1.2963488 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given byW = math, with d and δ the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device.
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85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Jb Light-emitting devices
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Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities

Masatoshi Kitamura, Shigeru Aomori, Jong Ho Na, and Yasuhiko Arakawa

Appl. Phys. Lett. 93, 033313 (2008); http://dx.doi.org/10.1063/1.2959732 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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Fullerene C60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 μm. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm2/V s. The mobility of 3.23 cm2/V s was obtained from the TFT with a channel length of 5 μm and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
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Chemical reversability of the electrical dedoping of conducting polymers: An organic chemically erasable programmable read-only memory

Perq-Jon Chia, Yee-Chia Yeo, Jeremy H. Burroughes, Richard H. Friend, and Peter K.-H. Ho

Appl. Phys. Lett. 93, 033314 (2008); http://dx.doi.org/10.1063/1.2962988 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The loss of electronic conductivity of p-doped poly(3,4-ethylenedioxythiophene) at high electrical bias is shown to be chemically reversible upon redoping with iodine vapor. This provides further confirmation that the initial loss of conductivity arises from the injection-induced dedoping mechanism. Repeat “write-erase” cycles are possible, which gives a rudimentary organic chemically erasable programmable read-only memory. Transient measurements show that the write time (i.e., time for loss of conductivity) decreases from thousands of seconds just above the critical electric field of 50 kV cm–1 to millisecond well above this value but below the onset of electrochemical destruction.
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84.30.Sk Pulse and digital circuits
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Application of metal nanoparticles decorated carbon nanotubes in photovoltaics

Prakash R. Somani, Savita P. Somani, and M. Umeno

Appl. Phys. Lett. 93, 033315 (2008); http://dx.doi.org/10.1063/1.2963470 (3 pages) | Cited 18 times

Online Publication Date: 25 July 2008

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Carbon nanotubes decorated with metal nanoparticles are introduced to photovoltaic application. The introduction of metal nanoparticles in the organic/organic-inorganic heterojunction solar cells is expected to improve the exciton dissociation (due to strong electric field at the metal-organics interface) and hence photovoltaic action. An improved photovoltaic action is indeed observed in n-Si/poly(3-octylthiophene) heterojunction solar cells incorporating multiwalled carbon nanotubes (MWCN) decorated with platinum metal nanoparticles (Pt: 20 wt %, 10–15 nm) as compared to pristine MWCN. The incorporation of metal nanoparticles should provide an alternative strategy to improve the photovoltaic performance of organic/organic-inorganic solar cells.
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81.07.De Nanotubes
81.07.Pr Organic-inorganic hybrid nanostructures
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
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High-performance C60 thin-film field-effect transistors with parylene gate insulator

Yoshihiro Kubozono, Simon Haas, Wolfgang L. Kalb, Pierre Joris, Fabian Meng, Akihiko Fujiwara, and Bertram Batlogg

Appl. Phys. Lett. 93, 033316 (2008); http://dx.doi.org/10.1063/1.2959819 (3 pages) | Cited 6 times

Online Publication Date: 25 July 2008

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C60 field-effect transistors (FETs) have been fabricated with parylene gate dielectric on Si/SiO2, on polyethylene terephthalate, and commercially available transparent sheet substrates. The best performance of the C60 FET device is achieved with parylene as gate dielectric: field-effect mobility of 0.41 cm2 V−1 s−1 and on-off ratio of ∼ 107. The excellent FET characteristics are recorded without any annealing, and the devices were kept in He atmosphere after an exposure to air. This result suggests the parylene gate dielectric to be highly H2O repellent. The mechanical flexibility and air-exposure effect were studied for the C60 FET with parylene gate dielectric.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.65.+h Molecular electronic devices
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