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Applied Physics Letters / Volume 93 / Issue 4 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 93, 042513 (2008); http://dx.doi.org/10.1063/1.2967739 (3 pages)

Analytical model of spin-polarized semiconductor lasers

Christian Gøthgen1, Rafał Oszwałdowski1,2, Athos Petrou1, and Igor Žutić1

1Department of Physics, State University of New York at Buffalo, New York 14260, USA
2Instytut Fizyki, Uniwersytet Mikołaja Kopernika, Grudziądzka 5/7, 87-100 Toruń, Poland

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(Received 7 June 2008; accepted 15 July 2008; published online 31 July 2008)

We formulate an analytical model for semiconductor lasers with injection (pump) of spin-polarized electrons, allowing us to systematically investigate different operating regimes. We demonstrate that the maximum threshold reduction by electrically pumped spin-polarized carriers is larger than previously thought possible and, surprisingly, can be enhanced by ultrafast spin relaxation of holes. We reveal how different modes of carrier recombination directly affect the threshold reduction. Neither spin-up nor spin-down electron populations are separately clamped (pinned) near the threshold, where such lasers can act as effective nonlinear filters of circularly polarized light, owing to their spin-dependent gain.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron beam pumping, electron spin polarisation, electron-hole recombination, light polarisation, semiconductor lasers

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2967739

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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