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28 Jul 2008

Volume 93, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 93, 043101 (2008); http://dx.doi.org/10.1063/1.2963352 (3 pages)

Xin Fu, Jun Jiang, Wenzheng Zhang, and Jun Yuan
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Collimated GeV electrons from the ionization of a gas by a laser pulse in an intense magnetic field

Kunwar Pal Singh and Hitendra K. Malik

Appl. Phys. Lett. 93, 044101 (2008); http://dx.doi.org/10.1063/1.2965108 (3 pages) | Cited 1 time

Online Publication Date: 29 July 2008

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A scheme is proposed for the acceleration of electrons generated during ionization of the helium and nitrogen gases by a laser pulse in the presence of an intense magnetic field. The electrons generated from the low atomic number gases gain energy in GeV due to the resonance between the electrons and the electric field of the laser in the presence of magnetic field. It is shown that collimated GeV electrons with small energy spread can be obtained from the ionization of helium and nitrogen. Suitable parameters have also been found for the suggested scheme.
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32.80.-t Photoionization and excitation

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Dae-Hyeong Kim, Won Mook Choi, Jong-Hyun Ahn, Hoon-Sik Kim, Jizhou Song, Yonggang Huang, Zhuangjian Liu, Chun Lu, Chan Ghee Koh, and John A. Rogers

Appl. Phys. Lett. 93, 044102 (2008); http://dx.doi.org/10.1063/1.2963364 (3 pages) | Cited 7 times

Online Publication Date: 31 July 2008

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Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout—together with designs that locate the neutral mechanical plane near the critical circuit layers—yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼ 0.04% for applied strains of ∼ 10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.30.De Semiconductor-device characterization, design, and modeling

Optical mobility in cross-type optical particle separation

Sang Bok Kim, Eunjung Jung, Hyung Jin Sung, and Sang Soo Kim

Appl. Phys. Lett. 93, 044103 (2008); http://dx.doi.org/10.1063/1.2967334 (3 pages) | Cited 4 times

Online Publication Date: 1 August 2008

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The optical mobilities of particles in a cross-type particle separation system were measured experimentally. Three particles were chosen to test the effects of optical mobility, namely, polystyrene latex, polymethylmethacrylate, and silica particles. The particles, which had the same optical mobility, showed identical behavior even though their sizes and refractive indices were very different. The optical mobility was validated by measuring the retention distance where each particle was deflected by the radiation force.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
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