APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Aug 2008

Volume 93, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 051101 (2008); http://dx.doi.org/10.1063/1.2965797 (3 pages)

Mariano A. Zimmler, Jiming Bao, Federico Capasso, Sven Müller, and Carsten Ronning
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC

A. V. Bolotnikov, P. G. Muzykov, and T. S. Sudarshan

Appl. Phys. Lett. 93, 052101 (2008); http://dx.doi.org/10.1063/1.2968306 (3 pages) | Cited 5 times

Online Publication Date: 6 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Boron diffusion from gas phase was implemented for p-type doping of 4H-SiC at temperatures in the range of 1800–2000 °C. A two-branch diffusion associated with two different diffusion mechanisms was observed. The activation energy Ea and prefactor D0 were calculated for each diffusion branch, that are Ea = 7.258 eV/D0 = 1.931×106 cm2/s and Ea = 8.742 eV/D0 = 2.126×107 cm2/s for fast and slow diffusion, respectively. It has been confirmed that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of diffusion profile has mostly deep level D centers.
Show PACS
66.30.J- Diffusion of impurities
71.55.Ht Other nonmetals

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen, C. S. Peng, V. Polojärvi, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, J. Likonen, and E. Arola

Appl. Phys. Lett. 93, 052102 (2008); http://dx.doi.org/10.1063/1.2966146 (3 pages) | Cited 7 times

Online Publication Date: 6 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.
Show PACS
66.30.Pa Diffusion in nanoscale solids
68.65.Fg Quantum wells
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.40.Gh Other heat and thermomechanical treatments

Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures

T. Gebhard, D. Alvarenga, P. L. Souza, P. S. S. Guimarães, K. Unterrainer, M. P. Pires, G. S. Vieira, and J. M. Villas-Boas

Appl. Phys. Lett. 93, 052103 (2008); http://dx.doi.org/10.1063/1.2965804 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
InAs quantum dot structures grown on InGaAlAs have been investigated for midinfrared photodetection. Intraband photocurrent and absorption measurements, together with a full three-dimensional theoretical modeling revealed that a bound-to-bound optical transition, where the final state is about 200 meV deep below the conduction band continuum, is responsible for the photogenerated current. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent. Photoluminescence and interband photocurrent spectra of the same structures further support the reached conclusions.
Show PACS
73.21.La Quantum dots
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
72.40.+w Photoconduction and photovoltaic effects
79.20.Fv Electron impact: Auger emission
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.55.Cr III-V semiconductors

Band alignment and thermal stability of HfO2 gate dielectric on SiC

Q. Chen, Y. P. Feng, J. W. Chai, Z. Zhang, J. S. Pan, and S. J. Wang

Appl. Phys. Lett. 93, 052104 (2008); http://dx.doi.org/10.1063/1.2969061 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The band alignment and thermal stability for HfO2 films on SiC with and without nitridation have been studied by using photoemission spectroscopy. The valence- and conduction-band offsets at HfO2/4H-SiC interfaces were measured to be 1.02 and 1.53 eV, respectively. The atomic source nitridation improves interface thermal stability with nitrogen passivation for the oxygen vacancies in dielectric films and for the defects on SiC surface, but induces band gap reduction for the HfO2 dielectric layer and band alignment shift at the interface. Postnitridation annealing helps to improve the band offsets of dielectric film to have sufficient injection barrier.
Show PACS
73.20.At Surface states, band structure, electron density of states
77.55.-g Dielectric thin films
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.jd Vacancies

Electron mobility in phosphorous doped {111} homoepitaxial diamond

J. Pernot and S. Koizumi

Appl. Phys. Lett. 93, 052105 (2008); http://dx.doi.org/10.1063/1.2969066 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The room temperature Hall electron mobility of phosphorous doped {111} homoepitaxial diamond is investigated experimentally and described theoretically for different doping and compensating center densities. The impurities mobility dependence is established. The mobility is found to be controlled by the lattice scattering mechanisms in low doped material (below 1017 cm−3), by lattice and ionized impurity scattering for moderate doping level (1017 cm−3<ND<1018 cm−3), and by neutral impurity scattering for highly doped material (above 1018 cm−3). The mobility parameters required to simulate the electric characteristics of electronic devices between 300 and 500 K in a wide doping range are then determined.
Show PACS
73.61.Cw Elemental semiconductors
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
61.72.sd Impurity concentration
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Metal nanocrystals synthesized with a micellar template based on a diblock copolymer for three-dimensional nonvolatile memory

Chung-Jin Kim, Seong-Wan Ryu, Yang-Kyu Choi, Jae-Joon Chang, Su Hak Bae, and Byeong-Hyeok Sohn

Appl. Phys. Lett. 93, 052106 (2008); http://dx.doi.org/10.1063/1.2969051 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal nanocrystals synthesized with a micellar template were applied for three-dimensional vertical floating gate memory devices. Using a highly ordered micellar template formed with a diblock copolymer, we produced cobalt (Co) nanocrystals with a uniform size and spatial distribution on a planar surface and a sidewall surface. The hydrogen annealing effects were investigated in terms of memory performance. The fabricated vertical floating gate memory with Co nanocrystals annealed with hydrogen showed a memory window with a voltage greater than 1 V and a retention time characteristic that preserves more than 60% of the initial charge after ten years.
Show PACS
84.30.Sk Pulse and digital circuits
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close