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4 Aug 2008

Volume 93, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 93, 051101 (2008); http://dx.doi.org/10.1063/1.2965797 (3 pages)

Mariano A. Zimmler, Jiming Bao, Federico Capasso, Sven Müller, and Carsten Ronning
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Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Wilson J. da Silva, Ivo A. Hümmelgen, Regina M. Q. Mello, and Dongge Ma

Appl. Phys. Lett. 93, 053301 (2008); http://dx.doi.org/10.1063/1.2967731 (3 pages) | Cited 10 times

Online Publication Date: 4 August 2008

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We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C60 fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of ∼ 1.5 μA and constant at collector voltages between 1 and 5 V.
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85.30.Tv Field effect devices
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Absence of substrate roughness effects on an all-printed organic transistor operating at one volt

Nikolai J. Kaihovirta, Daniel Tobjörk, Tapio Mäkelä, and Ronald Österbacka

Appl. Phys. Lett. 93, 053302 (2008); http://dx.doi.org/10.1063/1.2958225 (3 pages) | Cited 10 times

Online Publication Date: 4 August 2008

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A hygroscopic insulator transistor (HIFET) operating at 1 V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.
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85.30.Tv Field effect devices
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Solution-processed organic thin-film transistors with vertical nanophase separation

Takahiro Ohe, Miki Kuribayashi, Ryoichi Yasuda, Ami Tsuboi, Kazumasa Nomoto, Kotaro Satori, Masao Itabashi, and Jiro Kasahara

Appl. Phys. Lett. 93, 053303 (2008); http://dx.doi.org/10.1063/1.2966350 (3 pages) | Cited 27 times

Online Publication Date: 6 August 2008

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We have found that spin coating a solution of 6,13-bis(triisopropyl-silylethynyl)-pentacene (TIPS-pentacene) blended with poly(α-methylstyrene) (PαMS) induces vertical nanophase separation, which results in a trilayer film: a TIPS-pentacene layer, a mixed layer of TIPS-pentacene/PαMS, and a TIPS-pentacene layer. Organic thin-film transistors (TFTs) made from this TIPS-pentacene/PαMS solution have remarkably improved uniformity and thermal stability without degradation of electrical characteristics compared to organic TFTs with a conventional TIPS-pentacene sole channel layer.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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Orientation-dependent conductance study of pentacene nanocrystals by conductive atomic force microscopy

Wei-Shan Hu, Yu-Tai Tao, Yen-Fu Chen, and Chia-Seng Chang

Appl. Phys. Lett. 93, 053304 (2008); http://dx.doi.org/10.1063/1.2960343 (3 pages) | Cited 9 times

Online Publication Date: 6 August 2008

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Oriented pentacene nanocrystals with long molecular axis either parallel or perpendicular to a Au substrate were prepared on a bare Au surface or a self-assembled monolayer (SAM)-modified Au surface, respectively. The conductance across the differently oriented pentacene crystals were measured by conductive atomic force microscopy in a similar device configuration of Au/SAM/pentacene/Au-tip and Au/pentacene/SAM-modified-Au-tip, respectively. Rectifying current was observed depending on the location of the SAM in the device. With an average thickness of 50 nm, the conductance along the C–H⋯π stacking direction (a-b plane) was nearly five orders of magnitude larger than along the layer direction (c axis).
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73.63.Bd Nanocrystalline materials
81.16.Dn Self-assembly
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Organic thin-film transistors with color filtering functional gate insulators

Chiao-Shun Chuang, Jung-An Cheng, Yu-Jen Huang, Hsiao-Fen Chang, Fang-Chung Chen, and Han-Ping D. Shieh

Appl. Phys. Lett. 93, 053305 (2008); http://dx.doi.org/10.1063/1.2966365 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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We developed color filtering functional organic thin-film transistors exhibiting both high field-effect mobilities and color-filtering ability. The conventional colorant inks were utilized as the materials for the color filter/dielectric multifunction layers. In order to improve the electrical performance, a high dielectric polymeric insulator, poly(2,2,2-trifluoroethyl methacrylate), was introduced to modify the surface of the dielectric layer. Further, the Commission Internationale de L’Eclairage chromaticity coordinates were (0.64, 0.34), (0.36, 0.54), and (0.14, 0.15) for red, green, and blue devices, respectively, covering 49.2% National Television Systems Committee standard. This work represents one potential example for multifunctional organic electronics.
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85.30.Tv Field effect devices
42.79.Ci Filters, zone plates, and polarizers
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Organic light emitting bistable memory device with high on/off ratio and low driving voltage

Sung Hyun Kim, Kyoung Soo Yook, Jun Yeob Lee, and Jyongsik Jang

Appl. Phys. Lett. 93, 053306 (2008); http://dx.doi.org/10.1063/1.2964178 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Organic light emitting bistable memory devices (OLEBDs) with a dual function of organic light emitting diodes and organic memory devices were developed by using 0.5 nm thick MoO3 as an interlayer between hole injection layer and hole transport layer. The hole transport unit with MoO3 interlayer played a role of a memory unit as well as a hole transport unit. High on/off ratio over 1000 was obtained at a reading voltage of 1 V and driving voltage was lowered by MoO3. In addition, two different luminances were obtained at the same driving voltage by changing writing voltage of OLEBDs.
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85.60.Jb Light-emitting devices
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Charge-transfer states in conjugated polymer/fullerene blends: Below-gap weakly bound excitons for polymer photovoltaics

Markus Hallermann, Stephan Haneder, and Enrico Da Como

Appl. Phys. Lett. 93, 053307 (2008); http://dx.doi.org/10.1063/1.2969295 (3 pages) | Cited 57 times

Online Publication Date: 8 August 2008

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We report on the observation of a charge-transfer state forming at the molecular interface between a conjugated polymer and a fullerene based electron acceptor. Electron hole recombination in this state results in a luminescent transition at 840 nm, energetically separated from the polymer emission. This transition can be directly photoexcited by tuning the excitation energy below the conjugated polymer bandgap, demonstrating that the charge-transfer state originates from a ground-state interaction. By electric field induced quenching of the photoluminescence, we determine a binding energy of 130 meV for excitons in the charge-transfer state.
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71.70.-d Level splitting and interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
71.15.Nc Total energy and cohesive energy calculations
78.55.Kz Solid organic materials
84.60.Jt Photoelectric conversion
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