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4 Aug 2008

Volume 93, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 93, 051101 (2008); http://dx.doi.org/10.1063/1.2965797 (3 pages)

Mariano A. Zimmler, Jiming Bao, Federico Capasso, Sven Müller, and Carsten Ronning
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CdSe quantum dot-decorated double walled carbon nanotubes: The effect of chemical moieties

Yoong Ahm Kim, Hiroyuki Muramatsu, Ki Chul Park, Daisuke Shimamoto, Yong Chae Jung, Jin Hee Kim, Takuya Hayashi, Yasunori Saito, Morinobu Endo, Mauricio Terrones, and Mildred S. Dresselhaus

Appl. Phys. Lett. 93, 051901 (2008); http://dx.doi.org/10.1063/1.2966341 (3 pages) | Cited 10 times

Online Publication Date: 4 August 2008

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We report that fluorine atoms on the outer tubes of double walled carbon nanotubes (DWNTs) are more effective for nucleating and growing CdSe nanoparticles than oxygen-containing functional groups. The CdSe particles with an average size of 5–7 nm grow through infiltration into an interstitial space created by four to five thin bundled DWNTs. We envisage that DWNTs will replace single and multiwalled carbon nanotubes in a wide range of applications because chemical moieties could be introduced selectively on the outer tubes while the optical and physical properties of the inner tubes remain almost unchanged.
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81.07.De Nanotubes
81.07.Ta Quantum dots
81.16.Dn Self-assembly
61.46.Fg Nanotubes
78.30.Na Fullerenes and related materials
79.60.Jv Interfaces; heterostructures; nanostructures
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Effects of transverse temperature gradient on acoustic and streaming velocity fields in a resonant cavity

Majid Nabavi, Kamran Siddiqui, and Javad Dargahi

Appl. Phys. Lett. 93, 051902 (2008); http://dx.doi.org/10.1063/1.2960576 (3 pages) | Cited 6 times

Online Publication Date: 4 August 2008

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Effects of transverse temperature gradient on acoustic and streaming velocity fields inside a gas-filled rectangular enclosure subject to acoustic standing wave are investigated experimentally. Synchronized particle image velocimetry technique has been used to measure the acoustic and streaming velocity fields. The results show that the temperature difference between the top and the bottom walls deforms the symmetric streaming vortices about the channel’s centerline to the asymmetric ones. As the temperature difference increases, the amplitude of streaming velocity increases.
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43.25.Nm Acoustic streaming
43.58.Dj Sound velocity
47.32.-y Vortex dynamics; rotating fluids
47.60.Dx Flows in ducts and channels
47.80.Cb Velocity measurements

Local structure of indium oxynitride from x-ray absorption spectroscopy

J. T-Thienprasert, J. Nukeaw, A. Sungthong, S. Porntheeraphat, S. Singkarat, D. Onkaw, S. Rujirawat, and S. Limpijumnong

Appl. Phys. Lett. 93, 051903 (2008); http://dx.doi.org/10.1063/1.2965802 (3 pages) | Cited 8 times

Online Publication Date: 5 August 2008

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Synchrotron x-ray absorption near edge structures (XANES) measurements of In L3 edge is used in conjunction with first principles calculations to characterize rf magnetron sputtered indium oxynitride at different O contents. Good agreement between the measured and the independently calculated spectra are obtained. Calculations show that the XANES spectra of this alloy are sensitive to the coordination numbers of the In atoms, i.e., fourfold for indium nitride-like structures and sixfold for indium oxide-like structures, but not to the substitution of nearest neighbor N by O or vice versa.
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78.70.Dm X-ray absorption spectra
61.66.Fn Inorganic compounds
81.15.Cd Deposition by sputtering

Resonant Raman scattering from polyacetylene and poly(p-phenylene vinylene) chains included into hydrogenated amorphous carbon

M. Rybachuk, A. Hu, and J. M. Bell

Appl. Phys. Lett. 93, 051904 (2008); http://dx.doi.org/10.1063/1.2965458 (3 pages) | Cited 5 times

Online Publication Date: 5 August 2008

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The resonant Raman scattering in N-IR–UV range from amorphous hydrogenated carbon (a-C:H) reveals inclusions of trans-polyacetylene [trans-(CH)x] chains with approximate length of up to 120 C=C units and inclusions of poly(p-phenylene vinylene) (PPV) polymer chains. The PPV is evidenced by a strong dispersive mode at ∼ 1175 cm−1. It was found that the Raman response from core Ag trans-(CH)x modes incorporated into a−C:H to changing excitation energy is identical to that of freestanding chains, thus facilitating identification of trans-(CH)x in complex carbonaceous materials spectra.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Pg Disordered solids
61.43.Er Other amorphous solids

Sharp growth of nickel plasticity under impact load near Curie point

Michel Molotskii

Appl. Phys. Lett. 93, 051905 (2008); http://dx.doi.org/10.1063/1.2965489 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2008

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We proposed an explanation of the recent observations by Zaretsky [Appl. Phys. Lett. 92, 011913 (2008)] who discovered sharp increase in nickel plasticity under impact loading near Curie temperature TC. Growth of plasticity is explained by reduction in dynamical deceleration of dislocations controlled by their interaction with paramagnetic obstacles. The decreased contribution of these obstacles is due to spin-dependent transitions in internal magnetic field of ferromagnetic in radical pair dislocation-obstacle from strong to weak bonding states. The main contribution to the effect is from fields of magnetic fluctuations which have a large growth near Curie point.
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62.20.fq Plasticity and superplasticity
75.30.Cr Saturation moments and magnetic susceptibilities
61.72.Bb Theories and models of crystal defects
75.20.En Metals and alloys
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.40.Lm Deformation, plasticity, and creep

Morphology and flexibility of graphene and few-layer graphene on various substrates

U. Stöberl, U. Wurstbauer, W. Wegscheider, D. Weiss, and J. Eroms

Appl. Phys. Lett. 93, 051906 (2008); http://dx.doi.org/10.1063/1.2968310 (3 pages) | Cited 42 times

Online Publication Date: 6 August 2008

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We report on detailed microscopy studies of graphene and few-layer graphene produced by mechanical exfoliation on various semiconducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs, and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopies and compared to layers on SiO2. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity, or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions.
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61.46.-w Structure of nanoscale materials
68.47.Fg Semiconductor surfaces
68.35.bt Other materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Ps Atomic force microscopy (AFM)

Effect of grain orientation on ductility in a nanocrystalline Ni–Fe alloy

Hongqi LI, Peter K. Liaw, Hahn Choo, and Amit Misra

Appl. Phys. Lett. 93, 051907 (2008); http://dx.doi.org/10.1063/1.2968662 (3 pages) | Cited 5 times

Online Publication Date: 6 August 2008

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The influence of columnar grain geometry on mechanical property was studied in an electrodeposited nanocrystalline Ni–Fe alloy. The compressive results show that the strength is independent of grain orientation. However, the plastic strain increased remarkably when the loading axis is parallel to the direction of grain columns, which is due to the enhanced grain boundary and dislocation activities. The significance of the current study is that a new strategy was developed to improve the ductility of nanocrystalline materials.
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61.72.Mm Grain and twin boundaries
81.40.Lm Deformation, plasticity, and creep
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Electromigration-driven motion of an elliptical inclusion

Z. Li and N. Chen

Appl. Phys. Lett. 93, 051908 (2008); http://dx.doi.org/10.1063/1.2968718 (3 pages) | Cited 3 times

Online Publication Date: 6 August 2008

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We present a rigorous analytical solution for electromigration-driven motion of an elliptical inclusion in an infinite two-dimensional conductor (here, an inclusion may imply a void). An elliptical inclusion will move at a velocity proportional to the applied electric field strength, inversely proportional to an equivalent inclusion size, and strongly affected by the shape parameter of the inclusion, but independent of rotation of the inclusion with respect to the direction of the applied electric field. For a given equivalent inclusion size, a circular inclusion will move at the lowest velocity, while a slitlike one moves quickly.
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85.40.Ls Metallization, contacts, interconnects; device isolation

Room temperature epitaxial stabilization of a tetragonal phase in ARuO3 (A = Ca and Sr) thin films

Arturas Vailionis, Wolter Siemons, and Gertjan Koster

Appl. Phys. Lett. 93, 051909 (2008); http://dx.doi.org/10.1063/1.2967878 (3 pages) | Cited 19 times

Online Publication Date: 6 August 2008

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We demonstrate that SrRuO3 and CaRuO3 thin films undergo a room temperature structural phase transition driven by the substrate imposed epitaxial biaxial strain. As tensile strain increases, ARuO3 (A = Ca and Sr) films transform from the orthorhombic phase which is usually observed in bulk SrRuO3 and CaRuO3 at room temperature into a tetragonal phase which in bulk samples is only stable at higher temperatures. More importantly, we show that the observed phenomenon strongly affects the electronic and magnetic properties of ARuO3 thin films that are grown on different single crystal substrates which, in turn, offers the possibility to tune these properties.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
68.60.Bs Mechanical and acoustical properties
71.20.Ps Other inorganic compounds
75.70.Ak Magnetic properties of monolayers and thin films

Indicators of internal structural states for metallic glasses: Local order, free volume, and configurational potential energy

Y. Q. Cheng and E. Ma

Appl. Phys. Lett. 93, 051910 (2008); http://dx.doi.org/10.1063/1.2966154 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The structural states of metallic glasses (MGs) have been described previously using concepts such as free volume and configurational potential energy. Here we discuss the inadequacy of these indicators by examining a Cu–Zr–Al MG model experiencing different cooling and relaxation history. The results identify the local (icosahedral) ordering as a fundamental process underlying structural relaxation, and the degree of order as a more sensitive and revealing structural indicator.
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61.43.Fs Glasses

Photoconductivity in defective carbon nanotube sheets under ultraviolet–visible–near infrared radiation

M. Passacantando, F. Bussolotti, V. Grossi, S. Santucci, A. Ambrosio, M. Ambrosio, G. Ambrosone, V. Carillo, U. Coscia, P. Maddalena, E. Perillo, and A. Raulo

Appl. Phys. Lett. 93, 051911 (2008); http://dx.doi.org/10.1063/1.2968203 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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Multiwalled carbon nanotube sheets of relatively large area have been grown on a sapphire substrate by chemical vapor deposition at the substrate temperature of 500 and 750 °C. The photoconductivity measurements, performed under white light and monochromatic radiation in the ultraviolet–visible–near infrared region, show that the highly defective sample grown at 500 °C has a higher photosensitivity, thus revealing the crucial role of structural defects in determining the overall photoresponse of the nanotube’s sheets. The spectral photoresponse of these nanostructured films increases with the increase in photon energy, and is strongly correlated to the absorbance. The photoconductivity properties of these materials are favorable in potential development of large area light sensors as well as optoelectronic nanodevices.
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73.63.Fg Nanotubes
73.61.Cw Elemental semiconductors
73.50.Pz Photoconduction and photovoltaic effects
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.40.+w Photoconduction and photovoltaic effects

Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure

Guibao Xu, Suvranta K. Tripathy, Xiaodong Mu, Yujie J. Ding, Kejia Wang, Yu Cao, Debdeep Jena, and Jacob B. Khurgin

Appl. Phys. Lett. 93, 051912 (2008); http://dx.doi.org/10.1063/1.2967337 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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An electric field present in a GaN/AlN heterostructure can bring both the first-order and second-order Raman scattering processes into strong resonances. The resonant Stokes and anti-Stokes Raman scatterings result in the increase and decrease in nonequilibrium longitudinal-optical phonon temperatures, respectively. Moreover, the phonon temperature measured from the Raman scattering is increased with an applied electric field at a much higher rate than the lattice temperature due to the presence of field-induced nonequilibrium longitudinal-optical phonons.
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78.30.Fs III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices

Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

Jayeeta Bhattacharyya, Sandip Ghosh, and H. T. Grahn

Appl. Phys. Lett. 93, 051913 (2008); http://dx.doi.org/10.1063/1.2965119 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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The authors present results of a perturbation theory study of the combined effects of composition and anisotropic in-plane strain on the optical polarization properties of the three interband transitions in the vicinity of the fundamental energy gap of wurtzite group-III-nitride alloy films, pseudomorphically grown on GaN substrates with nonpolar orientation such as M-plane GaN(1math00). Valence band mixing induced by the anisotropic in-plane strain is shown to have a dramatic influence on the optical polarization properties. The results indicate that an increased efficiency of light emission in the visible spectral range can be achieved with compressively strained InxGa1−xN active layers. While AlxGa1−xN layers under tensile strain will exhibit a very poor light emission efficiency in the ultraviolet (UV) spectral range, efficient emission in the UV range can instead be achieved with InxAl1−xN films. These results also hold for alloy films on A-plane GaN(11math0) substrates.
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78.66.Fd III-V semiconductors
71.20.-b Electron density of states and band structure of crystalline solids
78.40.Fy Semiconductors
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