A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant; Goel, N.; Tsai, W.; Gaspe, C. K.; Santos, M. B.

doi:doi:10.1063/1.2972107

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High thermoelectric efficiency in lanthanum doped Yb₁₄MnSb₁₁

Lanthanum doping of the high-temperature p-type thermoelectric material Yb14MnSb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6La0.4MnSb11 are explained by the change in carrier concentration using a ...

Morphological and chemical optimization of ex situ NH₄F (40%) conditioned Si(111)-(1×1):H

Synchrotron radiation photoelectron spectroscopy was employed to investigate the chemical state of Si(111) surfaces upon anisotropic etching in concentrated NH4F solution. Minute amounts of oxidized silicon were detected and attributed to the fast Si–H–OH formation at atomic steps. Combining in situ optical and scanning probe techniques, consecutive chemical treatments were developed to achieve optimized morphological and chemical surface properties. Native oxides and a stressed SiO2/Si layer a...

In this letter, we present electrical characteristics of HfO₂-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In_0.53Ga_0.47As, InAs, and InSb substrates, along with the effect of a thin germanium interfacial passivation layer. We found that MOSCAPs on all n-type substrates showed good C-V characteristics with small frequency dispersion (<10% and <200 mV). However, MOSCAPs on p-type GaAs and In_0.53Ga_0.47As substrates exhibited poor C-V characteristics implying severe Fermi level pinning, as has also been seen for p-type InP substrate. On the other hand, MOSCAPs on p-type InAs and InSb substrates, known as smaller bandgap materials, showed good C-V characteristics. We also present plausible mechanism for Fermi level pinning and interface characteristics.

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KEYWORDS and PACS

Keywords

Fermi level, gallium arsenide, III-V semiconductors, indium compounds, MOS capacitors, passivation

PACS

84.32.Tt

Capacitors

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http://dx.doi.org/10.1063/1.2972107

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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