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Applied Physics Letters / Volume 93 / Issue 6 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 93, 062112 (2008); http://dx.doi.org/10.1063/1.2972142 (3 pages)

Morphological and chemical optimization of ex situ NH4F (40%) conditioned Si(111)-(1×1):H

M. Lublow, T. Stempel, K. Skorupska, A. G. Muñoz, M. Kanis, and H. J. Lewerenz

Division of Solar Energy, Interface Engineering Group, Helmholtz Zentrum Berlin für Materialien und Energie, D-14109 Berlin, Germany

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(Received 30 April 2008; accepted 29 July 2008; published online 15 August 2008)

Synchrotron radiation photoelectron spectroscopy was employed to investigate the chemical state of Si(111) surfaces upon anisotropic etching in concentrated NH4F solution. Minute amounts of oxidized silicon were detected and attributed to the fast Si–H–OH formation at atomic steps. Combining in situ optical and scanning probe techniques, consecutive chemical treatments were developed to achieve optimized morphological and chemical surface properties. Native oxides and a stressed SiO2/Si layer are removed by a two-step NH4F treatment leading to a terraced surface without triangular etch pits; subsequently, silicon in the Si1+/2+/3+ valence states is dissolved by HF (50%) while the surface topography is preserved.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, etching, hydrogen, photoelectron spectra, silicon, surface reconstruction, surface topography

PACS

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 79.60.Bm

    Clean metal, semiconductor, and insulator surfaces

  • 81.65.Cf

    Surface cleaning, etching, patterning

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2972142

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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