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11 Aug 2008

Volume 93, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 93, 062101 (2008); http://dx.doi.org/10.1063/1.2968206 (3 pages)

K. Shibata and K. Hirakawa
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Comment on “Stimulated emission from trap electronic states in oxide of nanocrystal Si” [ Appl. Phys. Lett. 92, 221910 (2008) ]

Jan Valenta and Ivan Pelant

Appl. Phys. Lett. 93, 066101 (2008); http://dx.doi.org/10.1063/1.2966344 (1 page) | Cited 2 times

Online Publication Date: 12 August 2008

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Abstract Unavailable
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81.07.Bc Nanocrystalline materials
68.47.Fg Semiconductor surfaces
71.55.Cn Elemental semiconductors
78.45.+h Stimulated emission
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Response to “Comment on ‘Stimulated emission from trap electronic states in oxide of nanocrystal Si’ ” [ Appl. Phys. Lett. 93, 066101 (2008) ]

Wei-Qi Huang, Shi-Rong Liu, Feng Jin, Hai-Xu Wang, and Shui-Jie Qin

Appl. Phys. Lett. 93, 066102 (2008); http://dx.doi.org/10.1063/1.2966346 (1 page)

Online Publication Date: 12 August 2008

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
78.45.+h Stimulated emission
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Rx Nanocrystalline materials
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