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11 Aug 2008

Volume 93, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 93, 062101 (2008); http://dx.doi.org/10.1063/1.2968206 (3 pages)

K. Shibata and K. Hirakawa
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High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

Jong H. Na, M. Kitamura, and Y. Arakawa

Appl. Phys. Lett. 93, 063501 (2008); http://dx.doi.org/10.1063/1.2969780 (3 pages) | Cited 39 times

Online Publication Date: 11 August 2008

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We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm2/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 107. Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm2/V s at an operating voltage as low as 5 V.
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85.30.Tv Field effect devices

Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure

C. R. Müller, L. Worschech, J. Heinrich, S. Höfling, and A. Forchel

Appl. Phys. Lett. 93, 063502 (2008); http://dx.doi.org/10.1063/1.2967880 (3 pages) | Cited 11 times

Online Publication Date: 11 August 2008

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Room temperature (RT) memory operation of a single InAs quantum dot (QD) layer serving as floating gate is demonstrated. In an in-plane gated quantum-wire transistor, the charge state of the self-assembled InAs QDs is controlled by the applied gate voltage. Due to the floating-gate function of the QDs on a nearby transport channel, threshold hysteresis exceeding 200 mV and storage times of several minutes are observed. The RT operation is attributed to an optimized positioning of the QDs at the site of a local minimum in the AlGaAs conduction band.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices

Understanding the operation of light-emitting electrochemical cells

Junfeng Fang, Yali Yang, and Ludvig Edman

Appl. Phys. Lett. 93, 063503 (2008); http://dx.doi.org/10.1063/1.2969034 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2008

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The ionic concentration (cion) is demonstrated to play a critical role for the operation of wide-gap light-emitting electrochemical cells. p-type and n-type doped regions are observed to grow from the anode and cathode, respectively, and form a light-emitting p-n junction when cion ≥ 0.1 ions/conjugated-polymer repeat unit. For lower cion, the doped regions come to a full stop before making contact and forming a p-n junction due to an ion-depletion effect. Finally, the n-type doped polymer is observed to be unstable over time under inert conditions, suggesting that a chemical side reaction between the n-type doped polymer and the electrolyte takes place.
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82.47.-a Applied electrochemistry

Holographic imaging using the phase coherent photorefractive effect in ZnSe quantum wells

A. Kabir, A. M. Ajward, and H. P. Wagner

Appl. Phys. Lett. 93, 063504 (2008); http://dx.doi.org/10.1063/1.2969042 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2008

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We demonstrate wide-field real-time, and depth-resolved holographic imaging of various reflecting objects using the all-optical phase coherent photorefractive effect in ZnSe quantum wells. In contrast to current photorefractive quantum well devices, these devices use the coherence of excitons as a basis for holography. This has the advantage that the entire depth-resolved information of the object can be obtained from the brightness profile of the holographic image with a resolution of a few micrometers. In addition, the high diffraction efficiency and short refresh time of the phase coherent photorefractive effect allow high-speed video acquisition of moving objects.
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42.40.Kw Holographic interferometry; other holographic techniques
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.67.De Quantum wells

Double gate GaInZnO thin film transistors

Hyuck Lim, Huaxiang Yin, Jin-Seong Park, Ihun Song, Changjung Kim, JaeChul Park, SunIl Kim, Sang-Wook Kim, Chang Bum Lee, Yong C. Kim, Young Soo Park, and Donghun Kang

Appl. Phys. Lett. 93, 063505 (2008); http://dx.doi.org/10.1063/1.2967456 (3 pages) | Cited 15 times

Online Publication Date: 12 August 2008

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We fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage (Vth), swing factor (S), and on/off current than those with a single gate. With the variation in back gate bias, the device performance significantly changes due to the modification of field distribution near the GIZO channel. It is believed that our DG structure is an effective way to improve the performance of GIZO oxide transistors and suppress the formation of an accumulation layer at the back surface.
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85.30.Tv Field effect devices

Using metal-insulator-semiconductor structures to investigate dielectrics charging in capacitive microelectromechanical switches

Hai-sheng San, Xu-yuan Chen, Peng Xu, Gang Li, and Lin-xian Zhan

Appl. Phys. Lett. 93, 063506 (2008); http://dx.doi.org/10.1063/1.2970043 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2008

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Capacitance-voltage characteristics measured on metal-insulator-semiconductor structures are used to investigate dielectrics charging in the capacitive microelectromechanical switches. An analytical model based on this method has been established. Effects of electrical stress on charge accumulation in silicon-rich nitride were experimentally investigated. The charging parameters of the silicon-rich nitride were extracted by the exponential curve fitting method. The experimental results show that three main physical processes dominate the charging behavior of the silicon-rich nitride. It is expected that the accumulated charges can be eliminated by using an offset square-wave voltage to actuate the switches.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Dd Connectors, relays, and switches
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Tt Capacitors

A molecular approach to the intermediate band solar cell: The symmetric case

N. J. Ekins-Daukes and T. W. Schmidt

Appl. Phys. Lett. 93, 063507 (2008); http://dx.doi.org/10.1063/1.2970157 (3 pages) | Cited 14 times

Online Publication Date: 13 August 2008

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Molecular materials may overcome some of the difficulties for making an intermediate band solar cell by storing energy in long-lived triplet states. Both the problems of fast nonradiative interband relaxation and selective photon absorption can be solved by this approach. A practical implementation of the molecular intermediate band solar cell is considered with a symmetric band alignment, resting on a proven triplet-triplet annihilation process. The limiting power conversion efficiency for this system exceeds that of a single bandgap device over a broad range, peaking at 40.6% for 1.9 eV under 1 sun illumination.
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84.60.Jt Photoelectric conversion

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, and T. G. Kim

Appl. Phys. Lett. 93, 063508 (2008); http://dx.doi.org/10.1063/1.2970990 (3 pages) | Cited 6 times

Online Publication Date: 13 August 2008

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We examined the origin of the charge traps in bothSiO2/Si3N4/SiO2 (ONO) and Al2O3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.
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84.32.Tt Capacitors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

GaNAsSb material for ultrafast microwave photoconductive switching application

K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, and J. Chazelas

Appl. Phys. Lett. 93, 063509 (2008); http://dx.doi.org/10.1063/1.2971204 (3 pages) | Cited 2 times

Online Publication Date: 15 August 2008

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We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 μm. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz.
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85.60.-q Optoelectronic devices
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