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11 Aug 2008

Volume 93, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 93, 062101 (2008); http://dx.doi.org/10.1063/1.2968206 (3 pages)

K. Shibata and K. Hirakawa
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Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

P. Darmawan, M. Y. Chan, T. Zhang, Y. Setiawan, H. L. Seng, T. K. Chan, T. Osipowicz, and P. S. Lee

Appl. Phys. Lett. 93, 062901 (2008); http://dx.doi.org/10.1063/1.2970036 (3 pages) | Cited 5 times

Online Publication Date: 13 August 2008

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Effect of Ge out diffusion into Lu2O3/Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current.
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77.55.-g Dielectric thin films
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Multiferroic BiMnO3 thin films with double SrTiO3 buffer layers

J. Y. Son and Y.-H. Shin

Appl. Phys. Lett. 93, 062902 (2008); http://dx.doi.org/10.1063/1.2970038 (3 pages) | Cited 9 times

Online Publication Date: 13 August 2008

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High quality BiMnO3 thin films with double SrTiO3 buffer layers were fabricated on Pt/Ti/SiO2/Si and SrTiO3 substrates, in which SrTiO3 buffer layers were used to reduce leakage current in BiMnO3 thin films. The SrTiO3 buffer layers had a thickness of about 5 nm obtained from the fitting of ellipsometer data, which gave the remarkable enhancement in leakage current. BiMnO3 thin films exhibited the ferromagnetic transition with the Curie temperature of about 105 K. The Pt/SrTiO3/BiMnO3/SrTiO3/Pt and SrRuO3/SrTiO3/BiMnO3/SrTiO3/SrRuO3 capacitors showed good ferroelectric properties with the remanent polarization of about 9 and 16 μC/cm2, respectively.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Cc Other ferromagnetic metals and alloys
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
77.80.B- Phase transitions and Curie point
84.32.Tt Capacitors

Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

K. B. Jinesh, W. F. A. Besling, E. Tois, J. H. Klootwijk, R. Wolters, W. Dekkers, M. Kaiser, F. Bakker, M. Tuominen, and F. Roozeboom

Appl. Phys. Lett. 93, 062903 (2008); http://dx.doi.org/10.1063/1.2971032 (3 pages) | Cited 7 times

Online Publication Date: 14 August 2008

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During atomic layer deposition of homogeneous LayZr1−yOx thin films spontaneous segregation of ZrO2 nanocrystals that are embedded in an amorphous La2O3 matrix takes place. This occurs if the Zr content in the LayZr1−yOx film rises above 30%, i.e., if the pulse ratio between the lanthanum precursor and the zirconium precursor is larger than four. X-ray diffraction analysis shows that the ZrO2 nanocrystals are in the tetragonal phase, which is the most stable configuration of this material with the highest dielectric permittivity. These nanocrystal-embedded thin films exhibit higher dielectric constants as the Zr content increases.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.30.Mh Solid-phase precipitation
64.75.St Phase separation and segregation in thin films
68.55.aj Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Polarization offsets of compositionally graded Nd-substituted Bi4Ti3O12 ferroelectric thin films

Di Wu, Hao Wu, Zhen Fu, Chao Zhao, and Aidong Li

Appl. Phys. Lett. 93, 062904 (2008); http://dx.doi.org/10.1063/1.2972027 (3 pages) | Cited 4 times

Online Publication Date: 14 August 2008

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The vertical offsets of hysteresis loops of compositionally graded Nd-substituted Bi4Ti3O12 (BNdT) ferroelectric films were studied as functions of the Nd gradient, the temperature, and the amplitude of driving voltage. We show that graded BNdT films may exhibit no offsets at room temperature and both graded and nongraded BNdT films exhibit pronounced offsets at elevated temperatures. The offset does not have a direct relation with the composition gradient but increases as the maximum voltage is increased. It is verified that the offset increases with the increase in asymmetry of leakage currents at positive and negative biases.
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77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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