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11 Aug 2008

Volume 93, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 93, 062101 (2008); http://dx.doi.org/10.1063/1.2968206 (3 pages)

K. Shibata and K. Hirakawa
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Improved cycleability of LiMn2O4-based thin films by Sn substitution

Dong Wook Shin, Ji-Won Choi, Won-Kook Choi, Yong Soo Cho, and Seok-Jin Yoon

Appl. Phys. Lett. 93, 064101 (2008); http://dx.doi.org/10.1063/1.2937854 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2008

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The spinel thin films of LiSnx/2Mn2−xO4 prepared by pulsed laser deposition were studied in regards with electrochemical reversibility and discharge capacity. LiSn0.0125Mn1.975O4 thin films possessed a large capacity of ∼ 120 mA h g−1 and a high capacity retention of >81% relative to their initial capacity at 4 C after the 90th cycle. Such promising results are believed to originate from the Mn4+-richer spinel structure and the less distortion of MnO6 octahedra. The near-edge x-ray-absorption fine structure result of the cycled LiSn0.0125Mn1.975O4 films can be highlighted with the specific local t2g symmetry resulting from the interaction between Mn 3d and O 2p.
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82.45.Un Dielectric materials in electrochemistry
82.47.-a Applied electrochemistry

The contribution of grain boundary barriers to the electrical conductivity of titanium oxide thin films

Nicolas Martin, Aurélien Besnard, Fabrice Sthal, Filipe Vaz, and Corinne Nouveau

Appl. Phys. Lett. 93, 064102 (2008); http://dx.doi.org/10.1063/1.2970034 (3 pages) | Cited 4 times

Online Publication Date: 12 August 2008

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Titanium oxide thin films were prepared by reactive magnetron sputtering. The reactive gas pulsing process was implemented to control the oxygen injection in the deposition process and, consequently, to tune the oxygen concentration in the films from pure titanium to stoichiometric TiO2, maintaining a homogeneous in-depth concentration. The electrical conductivity of the films was investigated as a function of the oxygen injection time, the metalloid concentration and temperature, in the range 90–600 K. The curved Arrhenius plots of the conductivity were examined taking into account the grain boundary limited transport model of Werner ( J. H. Werner [Solid State Phenom. 37–38, 213 (1994)]) . The grain barrier heights were found to depend significantly on the oxygen supplied into the deposition process and thus, on the oxygen-to-titanium atomic ratio in the films. The analysis as a function of temperature showed that the conduction mechanism in the coatings was not solely limited by the oxygen-to-titanium atomic ratio, but also by the grain boundary scattering.
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73.61.Le Other inorganic semiconductors
68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Mm Grain and twin boundaries
81.15.Cd Deposition by sputtering

X-ray pulse emission from cesium chloride aqueous solutions when irradiated by double-pulsed femtosecond laser pulses

Koji Hatanaka, Hiroshi Ono, and Hiroshi Fukumura

Appl. Phys. Lett. 93, 064103 (2008); http://dx.doi.org/10.1063/1.2967882 (3 pages) | Cited 7 times

Online Publication Date: 14 August 2008

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The intensity of x-ray emission from the aqueous solutions irradiated with focused femtosecond laser pulses (main pulses and relatively low-intensity prepulses) was measured as a function of the delay time between the main pulses and prepulses. Four different x-ray intensity peaks were observed in the picosecond and nanosecond ranges. The prepulse irradiation caused an increase in the x-ray intensity by a factor of 103–104, as confirmed by x-ray emission spectroscopy. Time-resolved reflectance measurements and imaging revealed that the increase was caused by the solution surface dynamics such as the picosecond plasma formation and decay and the transient (nanoseconds) surface roughness.
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78.70.En X-ray emission spectra and fluorescence
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Open optoelectrowetting droplet actuation

Han-Sheng Chuang, Aloke Kumar, and Steven T. Wereley

Appl. Phys. Lett. 93, 064104 (2008); http://dx.doi.org/10.1063/1.2970047 (3 pages) | Cited 13 times

Online Publication Date: 14 August 2008

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We present experimental realization of an open optoelectrowetting (o-OEW) device for liquid droplet manipulations. The o-OEW device is realized by coplanar electrodes and a photoconductor. The local switching effect for electrowetting resulting from illumination is based on the tunable impedance of the photoconductor. Dynamic virtual electrodes are created using projected images, leading to free planar movements of droplets. Basic operations such as transporting and merging were demonstrated. Translational speed up to 3.6 mm/s was measured. Equivalent circuit analysis shows that the operational frequency for the current setup ranges from 100 to 800 Hz.
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85.60.Bt Optoelectronic device characterization, design, and modeling
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.85.Np Fluidics

Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories

F. Wrobel, J. Gasiot, F. Saigné, and A. D. Touboul

Appl. Phys. Lett. 93, 064105 (2008); http://dx.doi.org/10.1063/1.2971203 (3 pages) | Cited 5 times

Online Publication Date: 15 August 2008

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We have investigated material susceptibilities to atmospheric neutrons by calculating nuclear cross sections for every natural element from carbon to bismuth. The alpha emitters that can be present in microelectronic devices have also been identified. To improve the performance of microelectronic devices, the semiconductor industry has introduced a number of chemical elements in the device process. These elements experience a natural flux of neutrons and can also contain natural radioactive isotopes. In both cases, device reliability can be compromised. We show that, at ground level, the introduction of an element may be more important than the effect of neutrons.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
85.30.De Semiconductor-device characterization, design, and modeling
84.30.Sk Pulse and digital circuits
61.80.Hg Neutron radiation effects
61.80.Jh Ion radiation effects
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