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18 Aug 2008

Volume 93, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 93, 073101 (2008); http://dx.doi.org/10.1063/1.2970055 (3 pages)

A. J. Du, Y. Chen, G. Q. Lu, and Sean C. Smith
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Point contact readout for a quantum dot terahertz sensor

S. Pelling, R. Davis, L. Kulik, A. Tzalenchuk, S. Kubatkin, T. Ueda, S. Komiyama, and V. N. Antonov

Appl. Phys. Lett. 93, 073501 (2008); http://dx.doi.org/10.1063/1.2968193 (3 pages) | Cited 6 times

Online Publication Date: 18 August 2008

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We introduce a terahertz radiation sensor in which the photon-induced ionization state of a quantum dot is monitored by a point contact formed in the same semiconductor heterostructure. For comparison we used a readout based on a single electron transistor coupled to the same quantum dot. The experiments prove functionality of the point contact-based device with additional practical advantage of a higher operation temperature up to 1.5 K and ease of nanofabrication.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Gv Single electron devices

Optimized orientation of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal for applications in medical ultrasonic arrays

Dan Zhou, Jing Chen, Laihui Luo, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 93, 073502 (2008); http://dx.doi.org/10.1063/1.2975178 (3 pages) | Cited 9 times

Online Publication Date: 22 August 2008

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In order to extend the potential applications of medical ultrasonic array transducers, two optimized directions with the maximal electromechanical coefficient k33′ and minimal k31 are determined for [001] and [110] poled 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals using the experimental method. The maximum values of k33′ can reach 92.8% and 93.3%, respectively, corresponding to [001]W/[110]L and [110]W/[1–11]L cuts. Furthermore, we simulate the performances of three 3.5 MHz linear array transducers based on the determined directions by PIEZOCAD. Results indicate that under the [001]W/[110]L direction, 25% broader bandwidth, 40% shorter pulse length, and 3 dB higher sensitivity can be obtained compared to the traditional Pb(Zr1−xTix)O3 transducers.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
43.38.Fx Piezoelectric and ferroelectric transducers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.80.Vj Acoustical medical instrumentation and measurement techniques
87.85.Ox Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)

Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

J. W. Peng, S. J. Lee, G. C. Albert Liang, N. Singh, S. Y. Zhu, G. Q. Lo, and D. L. Kwong

Appl. Phys. Lett. 93, 073503 (2008); http://dx.doi.org/10.1063/1.2973211 (3 pages) | Cited 11 times

Online Publication Date: 22 August 2008

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This letter presents the performance improvement of Schottky barrier metal-oxide-semiconductor field-effect transistor by employing gate-all-around (GAA) Si-nanowire (SiNW) structure. Without employing any barrier lowering technique, the mid-band-gap Ni-silicide Schottky barrier transistors demonstrated excellent performance and achieved subthreshold slope of ∼ 86 mV/decade and on-current of 19 μA/μm on a 12.5 nm SiNW, and subthreshold slope of ∼ 79 mV/decade and on-current of 207 μA/μm on a 4 nm diameter SiNW. Assisted with simulation, we show that this improvement can be attributed to the strong reduction in the Schottky barrier thickness as a result of the better gate control of GAA SiNW structure.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
81.07.-b Nanoscale materials and structures: fabrication and characterization

Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

Ruilong Xie, Wei He, Mingbin Yu, and Chunxiang Zhu

Appl. Phys. Lett. 93, 073504 (2008); http://dx.doi.org/10.1063/1.2966367 (3 pages) | Cited 6 times

Online Publication Date: 22 August 2008

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Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN/HfO2/GeOx/Ge MOS structure is as low as 2.02×1011 cm−2 eV−1 at the minimum. Comparing to the forming gas annealing, it is found that CF4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation
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