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18 Aug 2008

Volume 93, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 93, 073101 (2008); http://dx.doi.org/10.1063/1.2970055 (3 pages)

A. J. Du, Y. Chen, G. Q. Lu, and Sean C. Smith
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Efficient single-photon frequency upconversion at 1.06 μm with ultralow background counts

Huafang Dong, Haifeng Pan, Yao Li, E Wu, and Heping Zeng

Appl. Phys. Lett. 93, 071101 (2008); http://dx.doi.org/10.1063/1.2968311 (3 pages) | Cited 16 times

Online Publication Date: 18 August 2008

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We demonstrated an efficient single-photon frequency upconversion system for the infrared photons at 1.06 μm with ultralow background counts. By pumping the system at a longer wavelength than that of the single-photon signal, the background counts caused by the pump-induced parametric fluorescence in the nonlinear crystal were reduced markedly. We achieved so far the lowest noise of ∼ 150 /s for a near unity conversion efficiency.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Lm Parametric down conversion and production of entangled photons
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Mp Nonlinear optical crystals
42.55.Wd Fiber lasers

Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker

Appl. Phys. Lett. 93, 071102 (2008); http://dx.doi.org/10.1063/1.2970997 (3 pages) | Cited 11 times

Online Publication Date: 18 August 2008

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The authors describe simultaneous interfacial misfit (IMF) array formation along with antiphase domain (APD) suppression in highly mismatched (Δa0/a0 = 13%) AlSb grown on a 5° miscut Si (001) substrate. Strain energy from the AlSb/Si heterojunction is accommodated by a self-assembled two-dimensional array of pure 90° dislocations confined to the interface. The 13% lattice mismatch establishes the AlSb/Si IMF period of ∼ 3.46 nm. This IMF spacing is well matched to the step length of the 5° miscut Si (001) substrate. Furthermore, the miscut substrate geometry suppresses APD formation due to the double step height. The resulting bulk material has both very low defect density ( ∼ 7×105/cm2) and very low APD density ( ∼ 103/cm2) confirmed by transmission electron microscope images. This material is expected to be desirable for electronic III-V devices on Si substrates.
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68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Frequency stabilization of an ultraviolet laser to ions in a discharge

E. W. Streed, T. J. Weinhold, and D. Kielpinski

Appl. Phys. Lett. 93, 071103 (2008); http://dx.doi.org/10.1063/1.2973401 (3 pages) | Cited 5 times

Online Publication Date: 18 August 2008

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We stabilize an ultraviolet diode laser system at 369.5 nm to the optical absorption signal from Yb+ ions in a hollow-cathode discharge lamp. The error signal for stabilization is obtained by Zeeman spectroscopy of the 3 GHz wide absorption feature. The frequency stability is independently measured by comparison to the fluorescence signal from a laser-cooled crystal of 174Yb+ ions in a linear Paul trap. We measure a frequency fluctuation of 1.7 MHz over 1000 s and a frequency drift of 20 MHz over 7 days. Our method is suitable for use in quantum information processing experiments with trapped ion crystals.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Tunable upconversion photon detector

R. T. Thew, H. Zbinden, and N. Gisin

Appl. Phys. Lett. 93, 071104 (2008); http://dx.doi.org/10.1063/1.2969067 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2008

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We introduce a simple approach for a tunable upconversion detector. This scheme is relevant for both single photon detection or anywhere where low light levels at telecom wavelengths need to be detected with a high degree of temporal resolution or where high count rates are desired. A system combining a periodically poled lithium niobate waveguide for the nonlinear wavelength conversion and a low jitter silicon avalanche photodiode is used in conjunction with a tunable pump source. We report more than a tenfold increase in the detectable bandwidth using this tuning scheme.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.40.Az Waveguides, transmission lines, striplines

Fabrication of three-dimensional photonic crystal structures by interferometric lithography and nanoparticle self-assembly

Deying Xia, Jingyu Zhang, Xiang He, and S. R. J. Brueck

Appl. Phys. Lett. 93, 071105 (2008); http://dx.doi.org/10.1063/1.2971202 (3 pages) | Cited 6 times

Online Publication Date: 20 August 2008

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We report a simple approach to fabrication of three-dimensional photonic crystal structures. One-dimensional photoresist patterns (lines) are defined as templates using interferometric lithography and silica nanoparticles are self-assembled around the photoresist patterns using spin coating. Multiple-layer structures are formed by repeating these processing steps. The photoresist patterns are removed through high temperature calcination to fabricate three-dimensional photonic crystals with void channels in a woodpile structure. The optical properties of as-prepared photonic crystal structures are in good agreement with simulation results. This approach provides a versatile and facile technology to fabricate photonic bandgap materials and photonic crystals with defects.
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42.70.Qs Photonic bandgap materials
42.50.St Nonclassical interferometry, subwavelength lithography
81.16.Nd Micro- and nanolithography
81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

Jonathan Genest, Romain Béal, Vincent Aimez, and Jan J. Dubowski

Appl. Phys. Lett. 93, 071106 (2008); http://dx.doi.org/10.1063/1.2969063 (3 pages) | Cited 5 times

Online Publication Date: 20 August 2008

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Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65–150 mJ/cm2 allowed to generate an array of 1.2×1 mm2 sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Gh Other heat and thermomechanical treatments

Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler, K.-D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus, J. Simon, A. W. Holleitner, D. Schuh, and W. Wegscheider

Appl. Phys. Lett. 93, 071107 (2008); http://dx.doi.org/10.1063/1.2970035 (3 pages) | Cited 5 times

Online Publication Date: 20 August 2008

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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1–10 ms.
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72.40.+w Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
61.72.uj III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Cf Surface cleaning, etching, patterning

Low-cost and high-gain silicide Schottky-barrier collector phototransistor integrated on Si waveguide for infrared detection

Shiyang Zhu, G. Q. Lo, M. B. Yu, and D. L. Kwong

Appl. Phys. Lett. 93, 071108 (2008); http://dx.doi.org/10.1063/1.2970996 (3 pages) | Cited 2 times

Online Publication Date: 22 August 2008

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A two-terminal silicide Schottky-barrier collector phototransistor (SBCPT) integrated on a silicon-on-insulator waveguide was proposed and demonstrated using low-cost standard silicon processing technology. Owing to the current gain through the transistor action, the SBCPT at 5 V bias achieves a responsivity around 1550 nm of ∼ 150 mA/W, which is approximately 17.6-fold larger than the corresponding Schottky-barrier photodiode (SBPD) having the same silicide absorber. The current gain thereby the responsivity of SBCPT may be further improved simply by reducing the base width. Moreover, the SBCPT at negative bias exhibits a very low dark current of ∼ 12 pA owing to the presence of a reversely biased Si p-n junction while with the responsivity and speed only slightly degraded as compared to the SBPD counterpart. The proposed detector can be utilized as an in-line or terminal optical monitor in low-cost all-silicon electronic-photonic integrated circuits.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
42.82.Et Waveguides, couplers, and arrays

Intervalley carrier transfer in short-wavelength InP-based quantum-cascade laser

M. P. Semtsiv, M. Wienold, S. Dressler, W. T. Masselink, G. Fedorov, and D. Smirnov

Appl. Phys. Lett. 93, 071109 (2008); http://dx.doi.org/10.1063/1.2973212 (3 pages) | Cited 13 times

Online Publication Date: 22 August 2008

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The scattering of electrons out of the upper laser state into indirect valleys in quantum-cascade lasers is demonstrated by investigating the operation of the laser under the influence of magnetic fields up to 45 T. A quantum-cascade laser based on strain-compensated AlAs barriers and In0.73Ga0.27As/InAs wells, emitting with wavelength 3.1 μm, is investigated as a function of magnetic field normal to the surface. Minima in emission power are observed when Landau levels of the upper laser state are brought into resonance with states derived from the indirect valleys, leading to the partial depopulation of the upper laser level. The energy for the indirect valley states is determined to be about 640 meV above the bottom of the In0.73Ga0.27As Γ valley, about 70 meV above the upper laser level.
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42.55.Px Semiconductor lasers; laser diodes

Intelligent multiparameter sensing with fiber Bragg gratings

Liqiu Men, Ping Lu, and Qiying Chen

Appl. Phys. Lett. 93, 071110 (2008); http://dx.doi.org/10.1063/1.2975186 (3 pages) | Cited 4 times

Online Publication Date: 22 August 2008

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An approach to achieve intelligent sensing of multiple environmental parameters with a single-fiber sensor system is demonstrated through the use of multiplexed fiber Bragg gratings (FBGs) with coatings of different polymers and specifications. Using three FBGs of either acrylate or polyimide coating and polyimide coatings of different thicknesses, in situ discrimination of saccharinity, salinity, and temperature from the changes in the optical responses of the Bragg wavelengths of the gratings has been realized with sensitivities of 1.10×10−3 nm/%, 3.80×10−3 nm/% (blueshift), and 1.10×10−2 nm/°C (redshift), respectively.
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42.81.Pa Sensors, gyros
42.79.Dj Gratings
42.70.Jk Polymers and organics

Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process

Z. Y. Zhang, Q. Jiang, and R. A. Hogg

Appl. Phys. Lett. 93, 071111 (2008); http://dx.doi.org/10.1063/1.2968191 (3 pages) | Cited 6 times

Online Publication Date: 22 August 2008

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A bandgap and intersublevel spacing tuned laser has been realized by using a modulation C-doped InGaAs/GaAs quantum dot structure, which utilizes a postgrowth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground state bandgap blueshift of ∼ 13 nm and intersublevel energy spacing reduction of ∼ 30 nm compared to the unannealed device. The differences in the samples during annealing are attributed to the suppression of Ga vacancy propagation for samples with modulation C doping.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
71.20.Nr Semiconductor compounds
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