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Applied Physics Letters / Volume 93 / Issue 8 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 93, 081110 (2008); http://dx.doi.org/10.1063/1.2965461 (3 pages)

Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu1, C. H. Chiu1, Yuh-Renn Wu2, H. H. Yen1, J. R. Chen1, C. C. Kao1, Han-Wei Yang2, H. C. Kuo1, T. C. Lu1, W. Y. Yeh3, and S. C. Wang1

1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
2Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
3Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

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(Received 21 April 2008; accepted 3 July 2008; published online 26 August 2008)

A freestanding nanopillar with a diameter of 300 nm and a height of 2 μm is demonstrated by focused ion beam milling. The measured microphotoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blueshift of 68 meV in energy with a broadened full width at half maximum, ∼ 200 meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement suggests that the strain-relaxed emission region exhibits a higher radiative recombination rate than that of the strained region, indicating potential for realizing high-efficiency nanodevices in the UV/blue wavelength range.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

focused ion beam technology, gallium compounds, III-V semiconductors, indium compounds, nanotechnology, photoluminescence, semiconductor quantum wells, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2965461

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. M. Kim, D. S. Kim, T. W. Kang, Y. H. Cho, and K. S. Chung, Appl. Phys. Lett. 81, 2193 (2002)APPLAB000081000012002193000001.

    W. Q. Han and A. Zettl, Appl. Phys. Lett. 80, 303 (2002)APPLAB000080000002000303000001.

    S. N. Yi, J. H. Na, K. H. Lee, A. F. Jarjour, R. A. Taylora, Y. S. Park, T. W. Kang, S. Kim, D. H. Ha, G. Andrew, and D. Briggs, Appl. Phys. Lett. 90, 101901 (2007)APPLAB000090000010101901000001.

    T. Mattila and A. Zunger, J. Appl. Phys. 85, 160 (1999)JAPIAU000085000001000160000001.


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