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25 Aug 2008

Volume 93, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 93, 083901 (2008); http://dx.doi.org/10.1063/1.2973167 (3 pages)

R. J. Martín-Palma, C. G. Pantano, and A. Lakhtakia
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Biomimetization of butterfly wings by the conformal-evaporated-film-by-rotation technique for photonics

R. J. Martín-Palma, C. G. Pantano, and A. Lakhtakia

Appl. Phys. Lett. 93, 083901 (2008); http://dx.doi.org/10.1063/1.2973167 (3 pages) | Cited 26 times

Online Publication Date: 25 August 2008

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Mimetization of biological structures aims to take advantage of their spatial features for the development of devices of tailored functionality. In this work, we replicated the wing of a butterfly at the micro- and nanoscales by implementing the conformal-evaporated-film-by-rotation (CEFR) technique. Chalcogenide glasses were used due to their good optical and mechanical properties. Morphological characterization and optical measurements indicate high-fidelity replication of the original biotemplate; furthermore, the optical properties of the butterfly wings have a structural origin. The CEFR technique might be useful for the fabrication of highly efficient, biomimetic optical devices.
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87.50.wf Biophysical mechanisms of interaction
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Gain optimization in ion sensitive field-effect transistor based sensor with fully depleted silicon on insulator

Gil Shalev, Amihood Doron, Udi Virobnik, Ariel Cohen, Yosi Sanhedrai, and Ilan Levy

Appl. Phys. Lett. 93, 083902 (2008); http://dx.doi.org/10.1063/1.2977476 (3 pages) | Cited 4 times

Online Publication Date: 29 August 2008

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The sensitivity in bulk silicon (Si) and in silicon-on-insulator (SOI) ion sensitive field-effect transistor (ISFET) is determined according to its manufacturing process, geometry, and the selected materials. However, in SOI ISFETs the back gate biasing plays a major part in device sensitivity. It is shown that in fully depleted SOI ISFET the existing charge coupling between the front and back interfaces allows for gain optimization in terms of both gain increase and widening of the conventional gain peak. This stands in contrast with bulk Si ISFET where only a single channel exists. Here we report gain increase in ∼ 40% and increase in gain peak width of ∼ 250%.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
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