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25 Aug 2008

Volume 93, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 93, 083901 (2008); http://dx.doi.org/10.1063/1.2973167 (3 pages)

R. J. Martín-Palma, C. G. Pantano, and A. Lakhtakia
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Suppression of the intermode plasmon scattering due to total internal reflection of oblique plasmons in a multichannel high-electron-mobility transistor

V. V. Popov

Appl. Phys. Lett. 93, 083501 (2008); http://dx.doi.org/10.1063/1.2970994 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Terahertz radiation impinging on multichannel high-electron-mobility transistors (HEMTs) with comparable lateral and transverse gated-channel dimensions excites oblique plasmons modes that experience the total internal reflection from the gate edges. This reflection prevents leakage of the gated plasmon energy into the ungated plasmons modes of ungated device regions. These results can explain significant shrinking of the gated plasmon resonance linewidth in the multichannel HEMT.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Confining and slowing airborne sound with a corrugated metawire

J. Christensen, P. A. Huidobro, L. Martín-Moreno, and F. J. García-Vidal

Appl. Phys. Lett. 93, 083502 (2008); http://dx.doi.org/10.1063/1.2975966 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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In this letter we present a theoretical study on the acoustic wave propagation along a periodically corrugated perfect rigid wire surrounded by air. It is shown how acoustic surface waves (ASWs) can be engineered with their propagation properties controlled by geometrical means. These highly localized ASWs give rise to strong acoustical field confinement along the wire, whereas the slowing down of sound decelerate the group velocity down to zero. What is believed to be a promising feature of these low-loss propagation properties is the ability to tune sensing and screening applications with good transducer coupling.
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43.35.Pt Surface waves in solids and liquids
43.28.Bj Mechanisms affecting sound propagation in air, sound speed in the air
43.20.Hq Velocity and attenuation of acoustic waves

Diamond solid state ionization chambers for x-ray absorption spectroscopy applications

A. De Sio, A. Bocci, E. Pace, C. Castellano, G. Cinque, N. Tartoni, and F. D’Acapito

Appl. Phys. Lett. 93, 083503 (2008); http://dx.doi.org/10.1063/1.2976125 (3 pages)

Online Publication Date: 26 August 2008

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The photoresponse of a diamond detector has been compared with a standard ionization chamber in x-ray absorption spectroscopy applications. A photoconductive device based on a nitrogen-doped single crystal diamond has been tested by synchrotron radiation. Time stability and linearity have been studied by x rays at 10 keV to assess its performances. Finally, extended x-ray absorption fine structure at the Fe K-edge was carried on a standard iron target using both the diamond device and the IC. Spectroscopical results have been compared including references to literature.
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29.40.Cs Gas-filled counters: ionization chambers, proportional, and avalanche counters
85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
85.60.Gz Photodetectors (including infrared and CCD detectors)
41.60.Ap Synchrotron radiation

Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

Sung Jin Jo, Chang Su Kim, Jong Bok Kim, Joohee Kim, Min Jung Lee, Hyeon Seok Hwang, Hong Koo Baik, and Youn Sang Kim

Appl. Phys. Lett. 93, 083504 (2008); http://dx.doi.org/10.1063/1.2973160 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high-k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.
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85.30.Tv Field effect devices

Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n-type dopant

Meng-Huan Ho, Ming-Ta Hsieh, Teng-Ming Chen, Jenn-Fang Chen, Shiao-Wen Hwang, and Chin H. Chen

Appl. Phys. Lett. 93, 083505 (2008); http://dx.doi.org/10.1063/1.2976139 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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An efficient n-doped electron transport layer composed of 4,7-diphenyl-1,10-phenanthroline (BPhen) and dipotassium phthalate (PAK2) has been developed. By temperature-dependent admittance spectroscopy, the incorporation of PAK2 into BPhen is found to raise the Fermi level from 1.7 eV to only around 0.5 eV below BPhen’s lowest unoccupied molecular orbital, which further enhances the efficiency of electron injection from an Al cathode. When this n-doped layer is adopted in an organic light-emitting diode device, the green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]-pyrano[6,7,8-ij]quinolizin-11-one do-ped device can achieve a current efficiency of 16 cd/A and a power efficiency of 10.9 lm/W  at 1000 cd/m2.
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85.60.Jb Light-emitting devices
71.20.Rv Polymers and organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)

Thermal SiO2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing

Yung-Hsien Wu, Jia-Rong Wu, Yuan-Sheng Lin, and Min-Lin Wu

Appl. Phys. Lett. 93, 083506 (2008); http://dx.doi.org/10.1063/1.2976327 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The thermal SiO2 gated Ge metal-oxide-semiconductor (MOS) capacitor on Si substrate was accomplished by the direct oxidation of the amorphous Ge layer and a subsequent forming gas annealing. The epitaxial Ge on Si substrate shows the good crystallinity and the smooth interface with the thermal oxide. The oxide on the Ge layer is confirmed to have SiO2 bonding structure with tiny Ge content. The negligible hysteresis and the small frequency dispersion in C-V characteristics indicate the desirable oxide quality. The conduction mechanism through the oxide has been verified as Fowler–Nordheim tunneling with the conduction band offset of 2.81 eV. Another intriguing point of this process lies in the fact that it provides a simpler and ultralarge scale integration-compatible approach to fabricate high-performance Ge MOS field effect transistors as compared with previous works.
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85.30.Tv Field effect devices

Thin-film sensing with planar asymmetric metamaterial resonators

Ibraheem A. Ibraheem Al-Naib, Christian Jansen, and Martin Koch

Appl. Phys. Lett. 93, 083507 (2008); http://dx.doi.org/10.1063/1.2976636 (3 pages) | Cited 38 times

Online Publication Date: 27 August 2008

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We propose rectangular asymmetric double split resonators with field confining tips for use as thin-film sensors. In contrast to frequency selective surfaces, which consist of two-dimensional, periodic resonator arrays, only a single unit cell placed inside a rectangular waveguide is sufficient for sensing. Compared to circular structures, the rectangular design offers a miniaturization. Furthermore, the tips at the end of the resonator arms concentrate the field components into a small area, increasing the volumetric sensitivity of the device.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Gn Optical waveguides and couplers

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park, Hyun Soo Shin, Byung Du Ahn, Gun Hee Kim, Seung Min Lee, Kyung Ho Kim, and Hyun Jae Kim

Appl. Phys. Lett. 93, 083508 (2008); http://dx.doi.org/10.1063/1.2976309 (3 pages) | Cited 27 times

Online Publication Date: 27 August 2008

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Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga/Zn (%)]. A field-effect mobility of 1.63 cm2/V s and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Qing-Qing Sun, Apurba Laha, Shi-Jin Ding, David Wei Zhang, H. Jörg Osten, and A. Fissel

Appl. Phys. Lett. 93, 083509 (2008); http://dx.doi.org/10.1063/1.2976325 (3 pages)

Online Publication Date: 27 August 2008

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Single crystalline Nd2O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17×1011 eV−1 cm−2 and 3.75×1012 cm−2, respectively. The interface trap density is then further confirmed by the conductance method.
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84.32.Tt Capacitors

Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Ruilong Xie, Nan Wu, Chen Shen, and Chunxiang Zhu

Appl. Phys. Lett. 93, 083510 (2008); http://dx.doi.org/10.1063/1.2976632 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The energy distribution of interface trap density (Dit) in HfO2 gated germanium metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated by using charge pumping method with variable rise/fall-time measurement. Our results reveal that a high density of interface traps is present in the upper half of the Ge bandgap. As a result, the inversion-layer electron mobility of Ge n-channel MOSFETs was significantly degraded by the Coulomb scatterings. These results are also consistent with the abnormal capacitance-voltage (C-V) characteristics of Ge MOS capacitors.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

Z. Li, T. Schram, A. Stesmans, A. Franquet, T. Witters, L. Pantisano, N. Yamada, T. Tsunoda, J. Hooker, S. De Gendt, and K. De Meyer

Appl. Phys. Lett. 93, 083511 (2008); http://dx.doi.org/10.1063/1.2967869 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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It was found that applying a capping layer has an important impact on the work function (WF) of Mo gated metal-oxide semiconductor stacks. Before any postmanufacturing thermal treatment, uncapped Mo has a similar WF as one capped with a TaC layer. However, after forming gas anneal (FGA), the uncapped Mo gate exhibits a significantly higher WF than the TaC capped one does. This is understood as O incorporation during deposition, storage or FGA, and its subsequent piling up at the Mo/dielectric interface during FGA in the former case, which is an effect prevented by TaC capping.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Gh Other heat and thermomechanical treatments

Fully epitaxial Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions: Growth, transport, and spin filtering properties

J. O. Hauch, M. Fonin, M. Fraune, P. Turban, R. Guerrero, F. G. Aliev, J. Mayer, U. Rüdiger, and G. Güntherodt

Appl. Phys. Lett. 93, 083512 (2008); http://dx.doi.org/10.1063/1.2976546 (3 pages) | Cited 2 times

Online Publication Date: 29 August 2008

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Fully epitaxial Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) have been tested with respect to symmetry-enforced spin filtering. The Fe(110) electrodes exhibit Σ1↑ and Σ1↓ spin states, both crossing the Fermi level, but with a group velocity about 50% smaller for the minority states compared to the majority ones. These epitaxial but symmetry-mismatched MTJs yield tunneling magnetoresistance (TMR) values of 54% at 1.5 K and 28% at room temperature. The TMR value and the estimated tunneling spin polarization are consistent with a partial spin filtering due to the Σ1↑ states partially compensated by the Σ1↓ states.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.-m Magnetotransport phenomena; materials for magnetotransport
72.25.-b Spin polarized transport
73.40.Rw Metal-insulator-metal structures

Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

Runsheng Wang, Ru Huang, Liangliang Zhang, Hongwei Liu, Dong-Won Kim, Donggun Park, and Yangyuan Wang

Appl. Phys. Lett. 93, 083513 (2008); http://dx.doi.org/10.1063/1.2977477 (3 pages) | Cited 2 times

Online Publication Date: 29 August 2008

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In this letter, the channel backscattering characteristics and ballistic efficiency of gate-all-around silicon nanowire transistors (SNWTs) are experimentally investigated. A modified experimental extraction methodology for SNWTs is proposed, which takes into account the impact of contact resistance. It was found that without this correction, the characterized results will severely overestimate the channel backscattering in SNWTs due to the temperature sensitivity of the source contact resistance. The highest ballistic efficiency is observed in sub-40-nm SNWTs due to their quasi-one-dimensional properties, demonstrating their potential as an alternative device structure for near-ballistic transport from top-down approach.
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72.20.Ht High-field and nonlinear effects
73.23.Ad Ballistic transport
85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential
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