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25 Aug 2008

Volume 93, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 93, 083901 (2008); http://dx.doi.org/10.1063/1.2973167 (3 pages)

R. J. Martín-Palma, C. G. Pantano, and A. Lakhtakia
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Response of polar nanoregions in 68%Pb(Mg1/3Nb2/3)O3-32%PbTiO3 to a [001] electric field

Jinsheng Wen, Guangyong Xu, C. Stock, and P. M. Gehring

Appl. Phys. Lett. 93, 082901 (2008); http://dx.doi.org/10.1063/1.2959077 (3 pages) | Cited 5 times

Online Publication Date: 25 August 2008

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We report neutron diffuse scattering measurements on a single crystal of 68%Pb(Mg1/3Nb2/3)O3-32%PbTiO3. Strong diffuse scattering is observed at low temperatures. An external field applied along the [001] direction affects the diffuse scattering in the (HK0) plane significantly, suggesting a redistribution occurs between polar nanoregions of different polarizations perpendicular to the field. By contrast, the [001] field has no effect on the diffuse scattering in the (H0L) and (0KL) zones.
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77.22.Ej Polarization and depolarization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.-j Piezoelectricity and electromechanical effects

Thickness-dependent structural and electrical properties of multiferroic Mn-doped BiFeO3 thin films grown epitaxially by pulsed laser deposition

X. H. Zhu, H. Béa, M. Bibes, S. Fusil, K. Bouzehouane, E. Jacquet, A. Barthélémy, D. Lebeugle, M. Viret, and D. Colson

Appl. Phys. Lett. 93, 082902 (2008); http://dx.doi.org/10.1063/1.2969785 (3 pages) | Cited 23 times

Online Publication Date: 26 August 2008

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Thickness dependence of structural and electrical properties of multiferroic Mn-doped BiFeO3 (BFMO) thin films, grown on SrTiO3 (001) substrates with a bottom electrode of SrRuO3, was investigated. Very good ferroelectric properties were obtained in the thicker BFMO films with a typical remanent polarization of ∼ 65 μC/cm2, while ferroelectric polarization switching was too difficult to detect using a conventional technique in the thinnest BFMO films due to a much higher coercive field and an increase in the tunneling current. Their ferroelectric nature, however, was demonstrated by piezoresponse force microscopy, and excellent insulating properties and homogeneity were achieved in the films.
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68.55.jd Thickness
77.22.Ej Polarization and depolarization
75.80.+q Magnetomechanical effects, magnetostriction
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Rhombohedral-to-tetragonal phase transformation and thermal depolarization in relaxor-based ferroelectric single crystal

W. S. Chang, L. C. Lim, P. Yang, and C.-S. Tu

Appl. Phys. Lett. 93, 082903 (2008); http://dx.doi.org/10.1063/1.2973210 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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The rhombohedral-to-tetragonal (R-T) transformation in relaxor single crystals occurs over a temperature range, manifested by the coexistence of rhombohedral (R) and tetragonal (T) microscopic and nanotwin domains, a string of thermal current signals, and continued degradation of dielectric and electromechanical properties. Thermal current and high-resolution x-ray diffraction results suggest TRT ≅ 100–135 °C for [001]-poled PZN-4.5%PT and 90–115 °C for [001]-poled PZN-7%PT. The “TRT” determined from the dielectric permittivity-temperature plot of poled crystals corresponds to the lower bound of TRT, which is also a good indication of the depolarization temperature (TDP) of relaxor ferroelectric single crystals above which perceptible property degradation begins.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
64.70.K- Solid-solid transitions
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine

Appl. Phys. Lett. 93, 082904 (2008); http://dx.doi.org/10.1063/1.2977555 (3 pages) | Cited 27 times

Online Publication Date: 29 August 2008

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Electrical data on ZrO2/GeO2 stacks prepared by atomic oxygen beam deposition on Ge at 225 °C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO2 decomposition, Ge is incorporated into the growing ZrO2, thus, stabilizing the high-k tetragonal phase.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.aj Insulators
79.60.Bm Clean metal, semiconductor, and insulator surfaces
64.70.K- Solid-solid transitions
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