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25 Aug 2008

Volume 93, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 93, 083901 (2008); http://dx.doi.org/10.1063/1.2973167 (3 pages)

R. J. Martín-Palma, C. G. Pantano, and A. Lakhtakia
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Nonlinear magnetoresistance of an irradiated two-dimensional electron system

X. L. Lei and S. Y. Liu

Appl. Phys. Lett. 93, 082101 (2008); http://dx.doi.org/10.1063/1.2969043 (3 pages) | Cited 9 times

Online Publication Date: 25 August 2008

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Nonlinear magnetotransport of a microwave-irradiated high-mobility two-dimensional electron system under a finite direct current excitation is analyzed using a dc-controlled scheme with photon-assisted transition mechanism. The predicted amplitudes, extrema, and nodes of the oscillatory differential resistance versus the magnetic field and the current density are in excellent agreement with the recent experimental observation [ Hatke et al. Phys. Rev. B 77, 201304(R) (2008) ].
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73.40.-c Electronic transport in interface structures
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Wantae Lim, Jung Hun Jang, S.-H. Kim, D. P. Norton, V Craciun, S. J. Pearton, F. Ren, and H. Shen

Appl. Phys. Lett. 93, 082102 (2008); http://dx.doi.org/10.1063/1.2975959 (3 pages) | Cited 38 times

Online Publication Date: 25 August 2008

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High-performance amorphous (α−) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In2O3) films. The InGaZnO films were deposited by rf magnetron sputtering with the presence of O2 at room temperature. The n-type carrier concentration of InGaZnO film was ∼ 2×1017 cm−3. The bottom-gate-type TFTs with SiO2 or SiNx gate dielectric operated in enhancement mode with good electrical characteristics: saturation mobility 11.5 cm2 V−1 s−1 for SiO2 and 12.1 cm2 V−1 s−1 for SiNx gate dielectrics and drain current on-to-off ratio >105. TFTs with SiNx gate dielectric exhibited better performance than those with SiO2. This is attributed to the relatively high dielectric constant (i.e., high-k material) of SiNx. After more than 500 h aging time at room temperature, the saturation mobility of the TFTs with SiO2 gate dielectric was comparable to the as-fabricated value and the threshold voltage shift was 150 mV.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
77.22.Ch Permittivity (dielectric function)

N-type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah, Yumeng Shi, Hock Guan Ong, Chun Wei Lee, Lain-Jong Li, and Junling Wang

Appl. Phys. Lett. 93, 082103 (2008); http://dx.doi.org/10.1063/1.2975158 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of >102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n-type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices

Visible photoemission from InN

J. W. Glesener and J. P. Estrera

Appl. Phys. Lett. 93, 082104 (2008); http://dx.doi.org/10.1063/1.2936295 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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At 5.8 eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950 nm supports the case for a lower bandgap in this material.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.40.Gk Tunneling
71.20.Nr Semiconductor compounds

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

N. V. Nguyen, Oleg A. Kirillov, W. Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, K.-W. Choi, Wilman Tsai, and S. Sayan

Appl. Phys. Lett. 93, 082105 (2008); http://dx.doi.org/10.1063/1.2976676 (3 pages) | Cited 24 times

Online Publication Date: 27 August 2008

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The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0±0.1 eV whereas for the unpassivated or NH4OH-treated GaAs is 3.6 eV. At the Al/Al2O3 interface, all samples yield the same barrier height of 2.9±0.2 eV. With a band gap of 6.4±0.05 eV for Al2O3, the band alignments at both Al2O3 interfaces are established.
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81.65.Rv Passivation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.20.Nr Semiconductor compounds

Nonpolar 4H-AlN grown on 4H-SiC (1math00) with reduced stacking fault density realized by persistent layer-by-layer growth

Masahiro Horita, Tsunenobu Kimoto, and Jun Suda

Appl. Phys. Lett. 93, 082106 (2008); http://dx.doi.org/10.1063/1.2976559 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Nonpolar AlN layers were grown on 4H-SiC (1math00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1math00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm−1.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Nn Stacking faults and other planar or extended defects
68.35.bg Semiconductors

Effect of atomic hydrogen on boron-doped germanium: An ab initio study

R. Q. Wu, M. Yang, Y. P. Feng, and Y. F. Ouyang

Appl. Phys. Lett. 93, 082107 (2008); http://dx.doi.org/10.1063/1.2976669 (3 pages)

Online Publication Date: 28 August 2008

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Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p-type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B–H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge–Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations.
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61.72.jj Interstitials
71.15.-m Methods of electronic structure calculations
71.20.Mq Elemental semiconductors

Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

S. C. Su, Y. M. Lu, Z. Z. Zhang, C. X. Shan, B. H. Li, D. Z. Shen, B. Yao, J. Y. Zhang, D. X. Zhao, and X. W. Fan

Appl. Phys. Lett. 93, 082108 (2008); http://dx.doi.org/10.1063/1.2977478 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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X-ray photoelectron spectroscopy was used to measure the valence band offset at the ZnO/Zn0.85Mg0.15O heterojunction grown by plasma-assisted molecular beam epitaxy. The valence band offset (ΔEV) is determined to be 0.13 eV. According to the experimental band gap of 3.68 eV for the Zn0.85Mg0.15O, the conduction band offset (ΔEC) in this system was calculated to be 0.18 eV. The ΔEc:ΔEv in ZnO/Zn0.85Mg0.15O heterojunction was estimated to be 3:2.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
79.60.Jv Interfaces; heterostructures; nanostructures

Interstitial-based boron diffusion dynamics in amorphous silicon

Ning Kong, Taras A. Kirichenko, Gyeong S. Hwang, and Sanjay K. Banerjee

Appl. Phys. Lett. 93, 082109 (2008); http://dx.doi.org/10.1063/1.2976556 (3 pages)

Online Publication Date: 29 August 2008

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Using density-functional theory calculations we identified an interstitial-based fast boron diffusion mechanism in amorphous silicon. We found that interstitial-like point defects, omnipresent in as-implanted silicon, to be very stable in an amorphous network and can form highly mobile pair with Boron atoms. The transient existence of such point defects in amorphous silicon is suggested to play an important role in boron diffusion. We found the activation energy for this pathway to be 2.73 eV, in good agreement with experimental results. In addition, this mechanism is consistent with the experimentally reported transient and concentration-dependent features of boron diffusion in amorphous silicon.
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61.72.jj Interstitials
61.43.-j Disordered solids
71.55.Cn Elemental semiconductors
66.30.Lw Diffusion of other defects

Enhancement of multiple-phonon resonant Raman scattering in Co-doped ZnO nanorods

The-Long Phan, Roger Vincent, David Cherns, Nguyen Huy Dan, and Seong-Cho Yu

Appl. Phys. Lett. 93, 082110 (2008); http://dx.doi.org/10.1063/1.2968307 (3 pages) | Cited 13 times

Online Publication Date: 29 August 2008

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We have studied Raman scattering in Co-doped ZnO nanorods prepared by thermal diffusion. Experimental results show that the features of their non-resonant spectra are similar to Raman spectra from Co-doped ZnO materials investigated previously. Under resonant conditions, however, there is a strong enhancement of multiple-phonon Raman scattering processes. Longitudinal optical (LO)-phonon overtones up to eleventh order are observed. The modes become more obvious when the Co concentration diffused into ZnO nanorods goes to an appropriate value. This phenomenon is explained due to the shift of the band-gap energy and also due to the decrease in the intensity of near-band-edge luminescence. Our observation is in agreement with the prediction [ J. F. Scott, Phys. Rev. B 2, 1209 (1970) ] that the number of LO-phonon lines in ZnO is higher than that observed for CdS.
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78.30.Fs III-V and II-VI semiconductors
66.30.Xj Thermal diffusivity
81.16.-c Methods of micro- and nanofabrication and processing
73.22.-f Electronic structure of nanoscale materials and related systems
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.55.Et II-VI semiconductors

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky, J. Xie, B. Hertog, B. Cui, D. C. Look, and P. P. Chow

Appl. Phys. Lett. 93, 082111 (2008); http://dx.doi.org/10.1063/1.2970991 (3 pages) | Cited 23 times

Online Publication Date: 29 August 2008

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Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm2/V s) and sheet charge density (>3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼ 100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼ 1.3 A/mm and a peak transconductance of ∼ 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Carrier doping in anatase TiO2 film by perovskite overlayer deposition

K. S. Takahashi and H. Y. Hwang

Appl. Phys. Lett. 93, 082112 (2008); http://dx.doi.org/10.1063/1.2976750 (3 pages) | Cited 6 times

Online Publication Date: 29 August 2008

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Heterostructures composed of perovskite overlayers on anatase TiO2 films were fabricated on LaAlO3 substrates. By depositing LaTiO3 and LaAlO3 thin films on the insulating anatase TiO2 films, metallic conduction was induced in the anatase layer with the increasing thickness of the perovskite overlayer. This perovskite overlayer deposition on TiO2 provides a method to induce free carriers, which may be applied to the development of transparent conducting oxides.
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61.72.up Other materials
68.55.ag Semiconductors
73.61.Le Other inorganic semiconductors
72.20.Ee Mobility edges; hopping transport
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