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1 Sep 2008

Volume 93, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 091901 (2008); http://dx.doi.org/10.1063/1.2976330 (3 pages)

Fang-Fang Ren, M. B. Yu, J. D. Ye, Q. Chen, S. T. Tan, G. Q. Lo, and D. L. Kwong
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Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications

Xinman Chen, Guangheng Wu, and Dinghua Bao

Appl. Phys. Lett. 93, 093501 (2008); http://dx.doi.org/10.1063/1.2978158 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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Highly c-axis oriented Mg0.2Zn0.8O thin films with hexagonal structure were prepared on Pt/TiO2/SiO2/Si substrates by sol-gel spin coating technique. The Pt/Mg0.2Zn0.8O/Pt devices showed a reversible and steady resistance switching characteristic. The resistance switching from low resistance state (LRS) to high resistance state (HRS) with a resistance ratio of HRS to LRS of about 25 was achieved at a voltage of as low as 0.65 V. The dominant conduction mechanisms of LRS and HRS were explained by Ohmic behavior and trap-controlled space charge limited current, respectively. Furthermore, formation of conducting filaments in LRS was suggested. This study indicates that the Pt/Mg0.2Zn0.8O/Pt device may be a promising candidate for memristor applications.
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73.40.Sx Metal-semiconductor-metal structures
68.55.ag Semiconductors
73.50.Fq High-field and nonlinear effects
72.60.+g Mixed conductivity and conductivity transitions

Slope parameters at metal-organic interfaces

Y. C. Zhou, J. X. Tang, Z. T. Liu, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 93, 093502 (2008); http://dx.doi.org/10.1063/1.2977613 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Carrier injection barriers are often described as linear functions of metal’s work function or electronegativity. Slope of these functions are called the slope parameters of the organic materials. Using either the work function or the electronegativity relation has led to different slope parameters. This work discusses the discrepancy in the relation between the two slope parameters in literature. Using updated data, we analyzed the relation between work function and electronegativity. The slope parameters of different organics are compiled, analyzed, and found to follow a linear relation with the inverse of the organics’ band gaps.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Formation of extremely high current density LaB6 field emission arrays via e-beam deposition

K. C. Qi, Z. L. Lin, W. B. Chen, G. C. Cao, J. B. Cheng, and X. W. Sun

Appl. Phys. Lett. 93, 093503 (2008); http://dx.doi.org/10.1063/1.2977616 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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In this paper, we report a Spindt-type field emission array (FEA) with LaB6 as the emitting material. The LaB6 emitters were deposited by e-beam evaporation with low oxide content. As LaB6 in its vapor form is active and absorbs large quantity of residual gases, which oxidizes the LaB6 films, a special e-beam configuration was designed to ensure high evaporation rate which is essential for depositing pure phase LaB6. FEAs with LaB6 emitter tips exhibited an average emission current as high as about 0.23 μA/tip suggesting that LaB6 emitters are promising candidates for high current density vacuum electronic devices.
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85.45.Db Field emitters and arrays, cold electron emitters

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

Jeong-Min Lee, In-Tak Cho, Jong-Ho Lee, and Hyuck-In Kwon

Appl. Phys. Lett. 93, 093504 (2008); http://dx.doi.org/10.1063/1.2977865 (3 pages) | Cited 92 times

Online Publication Date: 2 September 2008

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The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions.
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85.30.Tv Field effect devices

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

Jian Lin and Dongge Ma

Appl. Phys. Lett. 93, 093505 (2008); http://dx.doi.org/10.1063/1.2975157 (3 pages) | Cited 8 times

Online Publication Date: 3 September 2008

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A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 104 and the retention time was over 2000 s without degradation. The formation and damage of the interface dipole at different electric fields have been attributed to the switching transition processes, leading to the transition from an Ohmic current of ON state to a tunneling injection limited current of OFF state. The achievement of easily fabricating WORM memory device based on soluble PVK film opens up an application field for polymer materials in organic electronics.
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68.47.Mn Polymer surfaces
73.61.Ph Polymers; organic compounds
81.40.Gh Other heat and thermomechanical treatments

Monitoring the Bragg peak location of 73 MeV/u carbon ions by means of prompt γ-ray measurements

E. Testa, M. Bajard, M. Chevallier, D. Dauvergne, F. Le Foulher, N. Freud, J.-M. Létang, J.-C. Poizat, C. Ray, and M. Testa

Appl. Phys. Lett. 93, 093506 (2008); http://dx.doi.org/10.1063/1.2975841 (3 pages) | Cited 17 times

Online Publication Date: 3 September 2008

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By means of a time-of-flight technique, we measured the longitudinal profile of prompt γ-rays emitted by 73 MeV/u 13C ions irradiating a polymethyl methacrylate target. This technique allowed us to minimize the shielding against neutrons and scattered γ-rays, and to correlate prompt gamma emission to the ion path. This correlation, together with a high counting rate, paves the way toward real-time monitoring of the longitudinal dose profile during ion therapy treatments. Moreover, the time correlation between the prompt gamma detection and the transverse position of the incident ions measured by a beam monitor can provide real-time three dimensional control of the irradiation.
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87.53.Kn Conformal radiation treatment
87.53.Jw Therapeutic applications, including brachytherapy

V-shaped electro-optic response observed in a chiral ferroelectric smectic liquid crystal

V. Manjuladevi, Yu. P. Panarin, Jang-Kun Song, J. K. Vij, and B. K. Sadashiva

Appl. Phys. Lett. 93, 093507 (2008); http://dx.doi.org/10.1063/1.2970039 (3 pages) | Cited 1 time

Online Publication Date: 3 September 2008

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We report on the observation of V-shaped switching in a ferroelectric liquid crystal cell over a wide range of temperatures. Results of the optical transmittance in the visible region give us the helical pitch for various temperatures of the ferroelectric liquid crystalline compound used. We show that the helical pitch, in addition to the spontaneous polarization (PS) and thickness of the alignment layer of the cell, is an important factor in giving V-shaped switching. A longer or helical compensated mixture gives a better V-shaped switching.
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77.80.Fm Switching phenomena
78.20.Jq Electro-optical effects
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Df Liquid crystals

A 0.2–0.5 THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

Satoshi Kohjiro, Kenichi Kikuchi, Masaaki Maezawa, Tomofumi Furuta, Atsushi Wakatsuki, Hiroshi Ito, Naofumi Shimizu, Tadao Nagatsuma, and Yuichi Kado

Appl. Phys. Lett. 93, 093508 (2008); http://dx.doi.org/10.1063/1.2976311 (3 pages) | Cited 7 times

Online Publication Date: 4 September 2008

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We have demonstrated that a superconductor-insulator-superconductor (SIS) mixer pumped by a photonic local oscillator (LO) covers the whole frequency range of 0.2–0.5 THz. In the bandwidth of 74% of the center frequency, this single-band receiver exhibits noise temperature of TRX ⩽ 20hf/kB, where h is Planck’s constant, f is the frequency, and kB is Boltzmann’s constant. Resultant TRX is almost equal to TRX of the identical SIS mixer pumped by three conventional frequency-multiplier-based LOs which share the 0.2–0.5 THz band. This technique will contribute to simple, wide-band, and low-noise heterodyne receivers in the terahertz region.
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84.40.Dc Microwave circuits
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.25.Cp Josephson devices

Charge injection at carbon nanotube-SiO2 interface

Hock Guan Ong, Jun Wei Cheah, Lang Chen, Hosea TangTang, Yanping Xu, Bing Li, Hua Zhang, Lain-Jong Li, and Junling Wang

Appl. Phys. Lett. 93, 093509 (2008); http://dx.doi.org/10.1063/1.2978249 (3 pages) | Cited 10 times

Online Publication Date: 5 September 2008

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Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.
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73.40.-c Electronic transport in interface structures

Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

Shirshendu Dey, Suhas M. Jejurikar, K. P. Adhi, and C. V. Dharmadhikari

Appl. Phys. Lett. 93, 093510 (2008); http://dx.doi.org/10.1063/1.2975374 (3 pages) | Cited 1 time

Online Publication Date: 5 September 2008

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Charge transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy at different stages of sample preparation. The spatial coverage of current leakage spots could be directly imaged, characterized, and shown to exhibit hysteresis against applied bias voltage. Current-voltage (I-V) measurements on both AlN and ZnO/AlN/Si(100) structure exhibited asymmetric nonlinear behavior with a large zero current region. Further analysis of I-V and current-force data suggests Fowler–Nordheim like behavior under Hertzian contact as a dominant mechanism for electron transport.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Fg Pulsed laser ablation deposition
68.37.Ps Atomic force microscopy (AFM)
85.30.Tv Field effect devices
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