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1 Sep 2008

Volume 93, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 93, 091901 (2008); http://dx.doi.org/10.1063/1.2976330 (3 pages)

Fang-Fang Ren, M. B. Yu, J. D. Ye, Q. Chen, S. T. Tan, G. Q. Lo, and D. L. Kwong
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Determining the static dielectric permittivity of ion conducting materials when obscured by electrode polarization

Johan Gråsjö, Ken Welch, and Maria Strømme

Appl. Phys. Lett. 93, 092901 (2008); http://dx.doi.org/10.1063/1.2977861 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A method is derived for the determination of the static dielectric permittivity of ion conducting materials when this parameter is obscured by electrode polarization in as-recorded low frequency dielectric spectra. The method requires permittivity measurements at two different electrode separations, and is applicable when the electric fields created by charge separation near the electrode surfaces do not induce nonlinear effects in the frequency region where electrode polarization begins to affect the dielectric response. The performance of the method is illustrated by the analysis of an ion conducting cellulose gel biosynthesized by the Acetobacter. xylinum bacterium. The method opens up possibilities to obtain more detailed information about dynamic processes in ion conducting materials from dielectric spectroscopy.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
82.70.Gg Gels and sols

Thermal conductivity of perovskite ferroelectrics

Makoto Tachibana, Taras Kolodiazhnyi, and Eiji Takayama-Muromachi

Appl. Phys. Lett. 93, 092902 (2008); http://dx.doi.org/10.1063/1.2978072 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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Thermal conductivities of BaTiO3, PbTiO3, KNbO3, KTaO3, NaNbO3, and Pb(Mg1/3Nb2/3)O3 (PMN) single crystals have been measured from 2 to 390 K. Pronounced jumps are found at structural transitions in BaTiO3 and KNbO3. A low-temperature anomaly from soft optical phonons is observed in KTaO3. For PMN and NaNbO3, glasslike behavior is observed in both the thermal conductivity and heat capacity measurements. We associate the glasslike behavior in NaNbO3 with the phase separation phenomena reported in recent studies.
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66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
77.80.B- Phase transitions and Curie point
65.40.Ba Heat capacity
61.43.Fs Glasses

Piezoelectric K0.5Na0.5NbO3 thick films derived from polyvinylpyrrolidone-modified chemical solution deposition

Lingyan Wang, Kui Yao, and Wei Ren

Appl. Phys. Lett. 93, 092903 (2008); http://dx.doi.org/10.1063/1.2978160 (3 pages) | Cited 38 times

Online Publication Date: 3 September 2008

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Lead-free K0.5Na0.5NbO3 (KNN) ferroelectric films with enhanced thickness of 3.5 μm were prepared by a polyvinylpyrrolidone-modified chemical solution deposition method. A single perovskite phase with a dense morphology and (100) orientation was obtained at relatively low annealing temperature of 600 °C. A large effective piezoelectric coefficient d33, of 61 pm/V was demonstrated at 100 kHz without considering the substrate clamping effect. A well-saturated polarization hysteresis loop was obtained with a high remnant polarization Pr of 16.4 μC/cm2. These results showed that KNN is a promising lead-free piezoelectric film candidate, and that crystallizing the film at low processing temperature to obtain (100) orientation and dense morphology is critical to achieving excellent ferroelectric and piezoelectric properties.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments
77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Piezoelectric properties of low-temperature sintered Li-modified (Na, K)NbO3 lead-free ceramics

Ke Wang, Jing-Feng Li, and Nan Liu

Appl. Phys. Lett. 93, 092904 (2008); http://dx.doi.org/10.1063/1.2977551 (3 pages) | Cited 32 times

Online Publication Date: 4 September 2008

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LiNbO3-doped (Na, K)NbO3 lead-free piezoceramics were prepared by conventional sintering at a temperature as low as 950 °C using excess Na2O additives. The crystal structure changed from orthorhombic to tetragonal with increasing LiNbO3 amount since the phase transition temperature TO−T shifted downward. In the region of two-phase coexistence, enhanced piezoelectric constant d33 (280 pC/N) and electromechanical coupling factor kp (48.3%) with a high Curie temperature TC (475 °C) were obtained in the nominal composition 0.92(Na0.535K0.48)NbO3–0.08LiNbO3. Our results open up the way to low-temperature sintering of (Na, K)NbO3-based lead-free piezoceramics with high performance.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.66.Fn Inorganic compounds
64.70.K- Solid-solid transitions
77.22.Ch Permittivity (dielectric function)

Influence of ferroelectricity on the photoelectric effect of LiNbO3

S. Dunn and D. Tiwari

Appl. Phys. Lett. 93, 092905 (2008); http://dx.doi.org/10.1063/1.2978195 (3 pages) | Cited 14 times

Online Publication Date: 5 September 2008

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A comparison between domain dependent photochemical and photoelectric cation reduction in LiNbO3 is presented. The reduction in photoelectric threshold for LiNbO3 due to the depolarization field allows UV irradiation to produce free electrons that can participate in photochemical reduction in silver nitrate. This is in addition to domain directed photophysics, where influences on the space charge layer due to the internal dipole of a ferroelectric determine the carrier at the surface. We show that the interaction of photoelectric and domain dependent influences is observed in LiNbO3 due to the low electron affinity ( ∼ 1–1.5 eV) and band bending (0.3–0.8 eV).
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.40.+w Photoconduction and photovoltaic effects
77.22.Ej Polarization and depolarization
77.22.Jp Dielectric breakdown and space-charge effects
77.80.Dj Domain structure; hysteresis
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Silver diffusion bonding and layer transfer of lithium niobate to silicon

Kenneth Diest, Melissa J. Archer, Jennifer A. Dionne, Young-Bae Park, Matthew J. Czubakowski, and Harry A. Atwater

Appl. Phys. Lett. 93, 092906 (2008); http://dx.doi.org/10.1063/1.2976560 (3 pages) | Cited 5 times

Online Publication Date: 5 September 2008

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A diffusion bonding method has been developed that enables layer transfer of single crystal lithium niobate thin films to silicon substrates. A silver film was deposited onto both the silicon and lithium niobate surfaces prior to bonding, and upon heating, a diffusion bond was formed. Transmission electron microscopy confirms the interface evolution via diffusion bonding which combines interfacial diffusion, power law creep, and growth of (111) silver grains to replace the as-bonded interface by a single polycrystalline silver film. The transferred film composition was the same as bulk lithium niobate.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method

Kuo-Hsing Kao, Shiow-Huey Chuang, Woei-Cherng Wu, Tien-Sheng Chao, Jian-Hao Chen, Ming-Wen Ma, Reui-Hong Gao, and Michael Y. Chiang

Appl. Phys. Lett. 93, 092907 (2008); http://dx.doi.org/10.1063/1.2978231 (2 pages)

Online Publication Date: 5 September 2008

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The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k ∼ 40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range

J. Yang, X. J. Meng, M. R. Shen, C. Gao, J. L. Sun, and J. H. Chu

Appl. Phys. Lett. 93, 092908 (2008); http://dx.doi.org/10.1063/1.2978329 (3 pages) | Cited 6 times

Online Publication Date: 5 September 2008

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The evolution of the electric field amplitude (V0) dependent scaling of dynamic hysteresis area (A∝V0α) with the temperature in Mn doped (Pb,Sr)TiO3 film was analyzed. α exhibited different values under three temperature regions, where (1) the intrinsic ferroelectric domain nucleation, growth, and reversal, (2) the competition between the polar nanoregions and mobile defects, and (3) the Joule loss during long range movement of oxygen vacancies were demonstrated. This study provides a quantitative criterion to distinguish the intrinsic ferroelectric hysteresis from artificial one.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
61.72.jd Vacancies

Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al2O3–HfO2 dielectrics

Shi-Jin Ding, Jun Xu, Yue Huang, Qing-Qing Sun, David Wei Zhang, and Ming-Fu Li

Appl. Phys. Lett. 93, 092909 (2008); http://dx.doi.org/10.1063/1.2969399 (3 pages) | Cited 8 times

Online Publication Date: 5 September 2008

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Electrical characteristics of metal-insulator-metal capacitors with various Al2O3–HfO2 nanolaminates are investigated. The results indicate that the breakdown field decreases with increasing the HfO2 individual-layer (IL) thickness. Concerning the same dielectric composition, the insulator with a thinner HfO2 IL also exhibits a significant improvement in the electrical breakdown and leakage characteristics. This is attributed to enhanced crystallization of the thicker HfO2 ILs. The insulator with alternate 1 nm Al2O3 and 5 nm HfO2 exhibits a breakdown field of 3.85 MV/cm at 125 °C, and a leakage current of 9.6×10−8 A/cm2 at 1 MV/cm and 200 °C. Further, it is revealed that the conduction mechanism in the high field range is dominated by the Poole–Frenkel emission with intrinsic trap energy of 1.91 eV.
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84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects
73.40.Rw Metal-insulator-metal structures
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