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1 Sep 2008

Volume 93, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 93, 091901 (2008); http://dx.doi.org/10.1063/1.2976330 (3 pages)

Fang-Fang Ren, M. B. Yu, J. D. Ye, Q. Chen, S. T. Tan, G. Q. Lo, and D. L. Kwong
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Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks

J. C. Liao, Y. K. Fang, Y. T. Hou, C. L. Hung, P. F. Hsu, K. C. Lin, K. T. Huang, T. L. Lee, and M. S. Liang

Appl. Phys. Lett. 93, 092101 (2008); http://dx.doi.org/10.1063/1.2967442 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The strain effect and channel length dependence of bias temperature instability on dual metal gate complementary metal-oxide-semiconductor field enhanced transistors with HfSiON dielectric were studied in detail. For channel length larger than 0.1 μm, both positive and negative bias temperature instabilities (PBTI and NBTI) were not affected by the tensile strain obviously. As the channel scaling down to less than 0.1 μm, the degradation after PBTI stress was still not influenced by the strain, however, the NBTI degradation was enhanced significantly. In addition, the dependence of BTI on channel length was extensively investigated under constant voltage and field stress.
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85.30.Tv Field effect devices

Polarization of defect related optical transitions in chalcopyrites

Katja Hönes, Michael Eickenberg, Susanne Siebentritt, and Clas Persson

Appl. Phys. Lett. 93, 092102 (2008); http://dx.doi.org/10.1063/1.2974085 (3 pages) | Cited 4 times

Online Publication Date: 3 September 2008

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We investigate the symmetry of shallow acceptors in Cu chalcopyrites by polarization dependent photoluminescence measurements and density functional calculations. We determine the influence of the band symmetry versus the site symmetry. The polarization of the emitted or absorbed light is parallel to the c-axis in the case of CuGaSe2 and perpendicular to the c-axis in the case of CuInSe2. The symmetry of the defects depends in each case on the symmetry of the topmost band. Neither does the site symmetry affect the defect symmetry nor do the defects change the symmetry of the band.
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78.66.Nk Insulators
61.72.jd Vacancies
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
78.55.Hx Other solid inorganic materials

Improved effective mass theory for silicon nanostructures

K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran

Appl. Phys. Lett. 93, 092103 (2008); http://dx.doi.org/10.1063/1.2978196 (3 pages) | Cited 2 times

Online Publication Date: 4 September 2008

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Effective mass theory is known to fail for nanostructures of indirect band gap materials such as silicon. We show that this situation can be remedied by going beyond the conventional second order expansion in the wave vector k. The method including fourth order terms is developed for the conduction band of silicon and applied to the 〈100〉-oriented wells, wires, and dots. The energy minima, their shift in k-space, as well as the variation in the effective mass with size are fully predicted from analytical equations containing only bulk parameters. This approach opens the way for accurate simulations of realistic quantum devices avoiding heavy calculations.
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73.21.Fg Quantum wells
73.21.Hb Quantum wires
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.La Quantum dots

Asymmetric transport in asymmetric T-shaped graphene nanoribbons

Yuan Ping Chen, Yue E. Xie, L. Z. Sun, and Jianxin Zhong

Appl. Phys. Lett. 93, 092104 (2008); http://dx.doi.org/10.1063/1.2978246 (3 pages) | Cited 18 times

Online Publication Date: 4 September 2008

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We propose an asymmetric T-shaped graphene nanoribbon (TGNR) that shows peculiar transport properties. In the vicinity of the Fermi level, the electron transmissions from the vertical graphene nanoribbon (GNR) to the two ends of the horizontal GNR are highly asymmetric. The electrons mostly transmit to one horizontal arm while are blocked by the other one. It is originated from the local asymmetric couplings between the intersection of the junction and the two horizontal arms. The asymmetric transport is very robust, even the T-shaped junction has a large size. Thus the asymmetric TGNR can be served as important components of nanocircuits.
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73.61.Wp Fullerenes and related materials
71.20.Tx Fullerenes and related materials; intercalation compounds
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