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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Nonlinear optical infrared microscopy with chemical specificity

Eun Seong Lee and Jae Yong Lee

Appl. Phys. Lett. 94, 261101 (2009); http://dx.doi.org/10.1063/1.3167286 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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We demonstrate a realization of nonlinear optical infrared microscopy that is capable of chemically specific imaging with high spatial resolution. It exploits the nonlinear refraction of the target material that is thermally induced by resonantly absorbed mid-infrared radiation and probed with a short wavelength near-infrared laser beam. The O–H and C–H2 vibrational modes in a water-oil mixture sample are selectively imaged at two different midinfrared wavelengths and the spatial resolution is measured to be 1.1 μm in the condition of numerical aperture 0.5, which is not attainable with conventional infrared microscopes.
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63.50.-x Vibrational states in disordered systems
78.30.C- Liquids

In situ passivation and blue luminescence of silicon clusters using a cluster beam/H2O codeposition production method

A. Brewer and K. von Haeften

Appl. Phys. Lett. 94, 261102 (2009); http://dx.doi.org/10.1063/1.3167355 (3 pages) | Cited 9 times

Online Publication Date: 29 June 2009

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Si clusters are produced in a gas aggregation source and fly through ultrahigh vacuum onto a cold target where they are codeposited with water vapor. Melting of the ice yields immediately a suspension of nanoparticles that emits intense, nondegrading luminescence in the blue wavelength range. Spectroscopic analysis reveals a Si/SiO core-shell structure where the luminescence stems from oxygen deficient defects. The main advantage of our production method is that it yields the luminescent Si nanoparticles in one step.
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81.65.Rv Passivation
78.55.Ap Elemental semiconductors
82.70.Kj Emulsions and suspensions
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes

Lian Li, Ping Li, Yumei Wen, Jing Wen, and Yong Zhu

Appl. Phys. Lett. 94, 261103 (2009); http://dx.doi.org/10.1063/1.3159629 (3 pages) | Cited 5 times

Online Publication Date: 29 June 2009

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The temperature influence on the luminescence characteristics of light-emitting diodes (LEDs) is investigated to reveal the connection of photoluminescence (PL) with photon absorption and electroluminescence (EL) through current injection. By inspecting the PL and EL spectra at identical injection intensities, it has been found that the normalized spectra in PL and EL exhibit obvious similarities in shape and apparent differences in spectral characteristic values. Furthermore, the differences are found to originate from the junction temperatures in diverse injection modes. The observations are conducted on AlGaInP red LED chips.
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85.60.Jb Light-emitting devices

200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width

Takashi Hosoda, Gela Kipshidze, Leon Shterengas, Sergey Suchalkin, and Gregory Belenky

Appl. Phys. Lett. 94, 261104 (2009); http://dx.doi.org/10.1063/1.3159819 (3 pages) | Cited 4 times

Online Publication Date: 29 June 2009

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Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.86.+b Optical workshop techniques
42.79.Gn Optical waveguides and couplers

Silver halide single mode fibers for broadband middle infrared stellar interferometry

T. Lewi, A. Tsun, A. Katzir, J. Kaster, and F. Fuchs

Appl. Phys. Lett. 94, 261105 (2009); http://dx.doi.org/10.1063/1.3166864 (3 pages) | Cited 4 times

Online Publication Date: 29 June 2009

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We report the demonstration of silver halide single mode fibers at λ = 7.5 μm. The fiber’s modal behavior was tested at λ = 10.6 and λ = 7.5 μm, using near field measurements. Single mode operation was observed for both wavelengths with propagation losses of ∼ 16 and ∼ 40 dB/m at λ = 10.6 and λ = 7.5 μm, respectively. A rejection ratio of ∼ 30 dB was achieved at λ = 7.5 μm for a 30 cm long fiber segment. These fibers would be particularly useful for modal filtering in the 6–20 μm band. Modal filters are essential technology elements in nulling stellar interferometry.
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95.75.Kk Interferometry

Photocurrent properties of freely suspended carbon nanotubes under uniaxial strain

S. M. Kaniber, L. Song, J. P. Kotthaus, and A. W. Holleitner

Appl. Phys. Lett. 94, 261106 (2009); http://dx.doi.org/10.1063/1.3159472 (3 pages) | Cited 4 times

Online Publication Date: 1 July 2009

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The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the nonmonotonous behavior by a superposition of the influence of the uniaxial strain on the resistivity of the CNTs and the effects caused by Schottky contacts between the CNTs and the metal contacts.
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73.63.Fg Nanotubes
73.30.+y Surface double layers, Schottky barriers, and work functions

Flexible Ge-on-polyimide detectors

W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu

Appl. Phys. Lett. 94, 261107 (2009); http://dx.doi.org/10.1063/1.3167300 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2009

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A flexible Ge-on-polyimide photodetector is demonstrated. The single crystalline thin film of Ge was transferred on the polyimide by adhesive wafer bonding and smart-cut techniques. A simple tunneling metal-oxide-semiconductor structure is fabricated for the detector applications. Due to the transparency of the polyimide, the responsivity of the detector is sensitive to the environments. At −2 V, the photodetector on the stainless steel has responsivities of 220, 200, and 140 mA/W at wavelength of 850, 1310, and 1550 nm, respectively.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Characterization of blue-green m-plane InGaN light emitting diodes

You-Da Lin, Arpan Chakraborty, Stuart Brinkley, Hsun Chih Kuo, Thiago Melo, Kenji Fujito, James S. Speck, Steven P. DenBaars, and Shuji Nakamura

Appl. Phys. Lett. 94, 261108 (2009); http://dx.doi.org/10.1063/1.3167824 (3 pages) | Cited 26 times

Online Publication Date: 1 July 2009

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High indium content blue-green (460–520 nm) m-plane InGaN light emitting diodes (LEDs) were grown on low defect-density m-plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from 1–400 A/cm2 current density under pulsed operation.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
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Direct evidence for Sb as a Zn site impurity in ZnO

U. Wahl, J. G. Correia, T. Mendonça, and S. Decoster

Appl. Phys. Lett. 94, 261901 (2009); http://dx.doi.org/10.1063/1.3159474 (3 pages) | Cited 13 times

Online Publication Date: 29 June 2009

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The lattice location of ion implanted antimony in zinc oxide has been determined by means of β− emission channeling from the radioactive 124Sb isotope. Following 30 keV implantation of 124Sb into a single-crystalline ZnO sample to a fluence of 1×1014 cm−2, the angular-dependent emission rate of β− particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found to occupy Zn sites, with the possible fraction on O sites being at maximum 5%–6%.
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61.72.uj III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Surface tension of heavy water under high magnetic fields

Masaaki Iino and Yuu Fujimura

Appl. Phys. Lett. 94, 261902 (2009); http://dx.doi.org/10.1063/1.3167767 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2009

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The surface tension of deuterium oxide-air interface was precisely measured under magnetic fields up to 10 T. The surface tension increased by 2.37±0.14 mN/m (3.30±0.19%) at 10 T. It was found that the surface tension increased linearly with an increase in the square of the magnetic field, the proportionality constant of which showed a marked isotope effect.
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68.03.Cd Surface tension and related phenomena

Well-aligned and suspended single-walled carbon nanotube film: Directed self-assembly, patterning, and characterization

Miao Lu, Min-Woo Jang, Greg Haugstad, Stephen A. Campbell, and Tianhong Cui

Appl. Phys. Lett. 94, 261903 (2009); http://dx.doi.org/10.1063/1.3151850 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2009

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Self-assembly process, patterning, and characterization of well-aligned single-walled carbon nanotube (SWNT) films are presented in this letter. The dc current in an ac dielectrophoresis of an SWNT solution was measured and used to control the self-assembly process to get an oriented, compact SWNT film 15–20 nm thick. The film was further patterned to form submicron beams by focused ion beams, or lithography and oxygen plasma etching. The Young’s modulus of the film ranged from 350 to 830 GPa. The electrical resistivity was about 8.7×10−3 Ω cm. The temperature coefficient of resistance was −1.2%/K.
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81.16.Dn Self-assembly
81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
73.63.Fg Nanotubes
62.25.-g Mechanical properties of nanoscale systems
81.07.De Nanotubes
62.20.de Elastic moduli
81.40.Jj Elasticity and anelasticity, stress-strain relations

Enhanced exciton-phonon interactions in photoluminescence of ZnO nanopencils

Cheol Hyoun Ahn, Sanjay Kumar Mohanta, Nae Eung Lee, and Hyung Koun Cho

Appl. Phys. Lett. 94, 261904 (2009); http://dx.doi.org/10.1063/1.3159829 (3 pages) | Cited 24 times

Online Publication Date: 29 June 2009

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We report enhanced exciton-phonon interactions in the photoluminescence (PL) of ZnO nanopencils compared with ZnO nanorods grown on ZnO/Si templates by thermal evaporation. Although the low temperature (<100 K) PL spectra of ZnO nanorods and nanopencils were dominated by the strong donor-bound exciton, the PL spectra at elevated temperatures (>100 K) showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for nanorods and nanopencils, respectively. This discrepancy in the behaviors of excitonic emissions of the ZnO nanorods and nanopencils was related to surface defects causing different strengths of exciton-phonon coupling. The different excitonic emissions of the nanorods and nanopencils revealed a 52 meV redshift in the room temperature PL of nanopencils.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
78.66.Hf II-VI semiconductors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures

R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci

Appl. Phys. Lett. 94, 261905 (2009); http://dx.doi.org/10.1063/1.3157838 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2009

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The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking determines an in-plane polarization dependence of the light emitted along the crystal growth direction in agreement with optical selection rules and strain field calculations.
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78.66.Fd III-V semiconductors
68.60.Bs Mechanical and acoustical properties

Effects of phase transition on the hardness of shape memory alloys

Guozheng Kang and Wenyi Yan

Appl. Phys. Lett. 94, 261906 (2009); http://dx.doi.org/10.1063/1.3160740 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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Based on the dimensional analysis and finite element calculations, the effects of phase transition on the hardness of shape memory alloys were unveiled. It is shown that the hardness of shape memory alloys increases with the increase in the phase transition stress, the increase in the plastic yield stress, and the decrease in the maximum transition strain. However, the ratio of the hardness to the phase transition stress or the ratio of the hardness to the plastic yield stress is not a constant and therefore, the hardness of shape memory alloys cannot be treated as a material property.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
62.20.fg Shape-memory effect; yield stress; superelasticity
81.40.Lm Deformation, plasticity, and creep
64.70.kd Metals and alloys
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Self-assembled bioinspired quantum dots: Optical properties

N. Amdursky, M. Molotskii, E. Gazit, and G. Rosenman

Appl. Phys. Lett. 94, 261907 (2009); http://dx.doi.org/10.1063/1.3167354 (3 pages) | Cited 15 times

Online Publication Date: 2 July 2009

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Until now, the wide research field of quantum dots (QDs) focused on inorganic structures. In the present study, we report on quantum confinement phenomena found in peptide nanocrystalline regions formed within self-assembly peptide nanospheres. These bioinspired nanostructures exhibit the optical absorption characteristics of QDs with pronounced luminescence of excitons whose origin is at the UV region. Theoretical estimations based on experimental data show that the radius of the self assembled peptide QDs is 1.3 nm.
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78.67.Hc Quantum dots
73.21.La Quantum dots
81.16.Dn Self-assembly
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
71.35.-y Excitons and related phenomena
78.55.-m Photoluminescence, properties and materials

On the lateral crystal growth of laser irradiated NiTi thin films

A. J. Birnbaum, Y. Lawrence Yao, U.-J. Chung, James. S. Im, X. Huang, and A. G. Ramirez

Appl. Phys. Lett. 94, 261908 (2009); http://dx.doi.org/10.1063/1.3138782 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2009

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This letter demonstrates the ability to induce laterally grown, large-aspect crystals via pulsed, melt-mediated laser crystallization in NiTi thin films. Sputter-deposited 200 nm NiTi films were pulse irradiated utilizing a homogenized 308 nm excimer beam over a series of varying incident laser energy densities. Solidification occurred via two distinct pathways: nucleation and growth occurred away from the boundary of irradiation, while lateral growth of unmelted seeds into the undercooled melt developed at the boundary of irradiation. The potential for exploiting this technique to produce rolling direction texture for anisotropic properties is also discussed.
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68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
64.70.dg Crystallization of specific substances
42.62.-b Laser applications

A comparison of the ideal strength between L12Co3(Al,W) and Ni3Al under tension and shear from first-principles calculations

Yun-Jiang Wang and Chong-Yu Wang

Appl. Phys. Lett. 94, 261909 (2009); http://dx.doi.org/10.1063/1.3170752 (3 pages) | Cited 9 times

Online Publication Date: 2 July 2009

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The ideal strengths of L12Co3(Al,W) in comparison with Ni3Al are investigated using the first-principles method. Results for the stress-strain relationships, ideal tensile and shear strengths are presented. The calculated elastic properties agree well with the experimental observations. Co3(Al,W) is found to have larger moduli and higher strengths, but less ductile than Ni3Al. The electronic structures indicate the directional covalentlike Co–W bonding through d-d hybridization is the origin of excellent mechanical properties of Co3(Al,W).
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81.40.Lm Deformation, plasticity, and creep
62.20.fk Ductility, malleability
81.40.Jj Elasticity and anelasticity, stress-strain relations
71.20.Be Transition metals and alloys
71.15.-m Methods of electronic structure calculations
62.20.de Elastic moduli
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Diamond Schottky-pn diode with high forward current density and fast switching operation

Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki

Appl. Phys. Lett. 94, 262101 (2009); http://dx.doi.org/10.1063/1.3159837 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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We fabricated a diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p-type layer and a Schottky metal layer. The SPND has superior characteristics that overcome the weak points of both a Schottky barrier diode and a pn diode. That is, the SPND showed high current density (over 4000 A/cm2) with low specific resistance (0.4 mΩ cm2) at a forward bias of 6 V while maintaining a high rectification ratio of ∼ 1010. Moreover, the SPND showed extremely fast turn-off speed of nanosecond order.
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85.30.Kk Junction diodes
73.40.Ei Rectification

Design of electron wave filters in monolayer graphene by tunable transmission gap

Xi Chen and Jia-Wei Tao

Appl. Phys. Lett. 94, 262102 (2009); http://dx.doi.org/10.1063/1.3168527 (3 pages) | Cited 26 times

Online Publication Date: 29 June 2009

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We have investigated the transmission in monolayer graphene barrier at nonzero angle of incidence. Taking the influence of parallel wave vector into account, the transmission as the function of incidence energy has a gap due to the evanescent waves in two cases of Klein tunneling and classical motion. The modulation of the transmission gap by the incidence angle, the height, and width of potential barrier may lead to potential applications in graphene-based electronic devices.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling

Rectification of spin-bias-induced charge currents

Feng Zhai, Xiaofang Zhao, and H. Q. Xu

Appl. Phys. Lett. 94, 262103 (2009); http://dx.doi.org/10.1063/1.3162304 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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When a spin bias is applied to a two-terminal device, a charge current will be generated. We demonstrate the rectification of such a current by studying spin-dependent transport through a quantum point contact (QPC) modulated by a spin-orbit interaction. When the polarization orientation of the spin bias (which is the spin-quantization axis) is along the transverse direction of the QPC, the two spin-conserved transmissions show a distinct variation with the incident energy. As a result, the charge current can turn from zero to a remarkable value by switching the spin bias from one lead to the other lead.
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73.40.Ei Rectification
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.23.-b Electronic transport in mesoscopic systems

Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

H. P. Porte, P. Uhd Jepsen, N. Daghestani, E. U. Rafailov, and D. Turchinovich

Appl. Phys. Lett. 94, 262104 (2009); http://dx.doi.org/10.1063/1.3158958 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2009

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We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.
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73.63.Kv Quantum dots
78.67.Hc Quantum dots
78.70.Gq Microwave and radio-frequency interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.21.La Quantum dots
78.47.D- Time resolved spectroscopy (>1 psec)

Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

J. B. You, X. W. Zhang, P. F. Cai, J. J. Dong, Y. Gao, Z. G. Yin, N. F. Chen, R. Z. Wang, and H. Yan

Appl. Phys. Lett. 94, 262105 (2009); http://dx.doi.org/10.1063/1.3167301 (3 pages) | Cited 19 times

Online Publication Date: 30 June 2009

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The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.
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73.61.Ga II-VI semiconductors
81.05.Dz II-VI semiconductors
52.77.-j Plasma applications
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Cd Deposition by sputtering
68.37.Ps Atomic force microscopy (AFM)

Thermoelectric evaluation of the dopant density of p-type InAs

M. C. Wagener, V. Wagener, and J. R. Botha

Appl. Phys. Lett. 94, 262106 (2009); http://dx.doi.org/10.1063/1.3167822 (3 pages) | Cited 3 times

Online Publication Date: 1 July 2009

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Thermoelectric measurements were performed on p-type InAs thin films grown by metalorganic vapor phase epitaxy. The measured Seebeck coefficient displayed an anomalous temperature dependence due to the existence of a highly conductive surface inversion layer. The effect of a degenerate conduction layer has been incorporated into our analysis and revealed that the sign-reversal temperature of the Seebeck coefficient remained unaffected by the surface layer. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.
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73.50.Lw Thermoelectric effects
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.uj III-V and II-VI semiconductors

Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg

Man Chang, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Sanghun Jeon, and Hyunsang Hwang

Appl. Phys. Lett. 94, 262107 (2009); http://dx.doi.org/10.1063/1.3168513 (3 pages) | Cited 5 times

Online Publication Date: 1 July 2009

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The transient charge trapping and detrapping of a thick SiO2/Al2O3 gate oxide device has been evaluated by single pulse Id-Vg (PIV). During the period of a single pulse, we observed fast electron detrapping. This occurred through the gate electrode, causing a counterclockwise PIV hysteresis despite electron injections from the channel region. The hysteresis direction transitioned from counterclockwise to clockwise as a function of pulse base level and peak level. The trap energy level of Al2O3, extracted by PIV at various temperatures, was found to be in the range of 1.14–1.39 eV, indicating the Frenkel–Poole defect band.
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85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
77.55.-g Dielectric thin films

Probing negative differential resistance on Si(111)-math×math-Ag surface with scanning tunneling microscopy

Weihua Wang, Aidi Zhao, Bing Wang, and J. G. Hou

Appl. Phys. Lett. 94, 262108 (2009); http://dx.doi.org/10.1063/1.3173821 (3 pages) | Cited 2 times

Online Publication Date: 2 July 2009

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We present our study on the Si(111)-math×math-Ag surface using scanning tunneling microscopy/spectroscopy. The results reveal that the well defined localized surface-state bands S2/S3 in the surface with lightly doped Si substrate play an important role in electron transport. The relative wide space charge layer beneath the surface interplays with the localized surface states, thus leading to the effect of the negative differential resistance.
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73.20.At Surface states, band structure, electron density of states
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
77.22.Jp Dielectric breakdown and space-charge effects
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