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5 Jan 2009

Volume 94, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 94, 013102 (2009); http://dx.doi.org/10.1063/1.3062938 (3 pages)

Hao-Chih Yuan, Jonghyun Shin, Guoxuan Qin, Lei Sun, Pallab Bhattacharya, Max G. Lagally, George K. Celler, and Zhenqiang Ma
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Editorial

Nghi Q. Lam

Appl. Phys. Lett. 94, 010401 (2009); http://dx.doi.org/10.1063/1.3068438 (1 page)

Online Publication Date: 8 January 2009

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99.10.Cd Errata
85.30.Tv Field effect devices
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Three dimensional silicon photonic crystals fabricated by two photon phase mask lithography

D. Shir, E. C. Nelson, Y. C. Chen, A. Brzezinski, H. Liao, P. V. Braun, P. Wiltzius, K. H. A. Bogart, and J. A. Rogers

Appl. Phys. Lett. 94, 011101 (2009); http://dx.doi.org/10.1063/1.3036955 (3 pages) | Cited 18 times

Online Publication Date: 5 January 2009

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We describe the fabrication of silicon three dimensional photonic crystals using polymer templates defined by a single step, two-photon exposure through a layer of photopolymer with relief molded on its surface. The resulting crystals exhibit high structural quality over large areas, displaying geometries consistent with calculation. Spectroscopic measurements of transmission and reflection through the silicon and polymer structures reveal excellent optical properties, approaching properties predicted by simulations that assume ideal layouts.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer

Whispering gallery mode enhanced optical force with resonant tunneling excitation in the Kretschmann geometry

J. J. Xiao, Jack Ng, Z. F. Lin, and C. T. Chan

Appl. Phys. Lett. 94, 011102 (2009); http://dx.doi.org/10.1063/1.3065024 (3 pages) | Cited 5 times

Online Publication Date: 5 January 2009

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The boundary element method is applied to investigate the optical forces when whispering gallery modes (WGMs) are excited by a total internally reflected wave. Such evanescent wave is particularly effective in exciting the high-Q WGM, while the low angular or high radial order modes are suppressed relatively. This results in a large contrast between the forces on and off resonance, and thus allows for high size selectivity. We fully incorporate the prism-particle interaction and found that the optical force behaves differently at different separations. Optimal separation is found, which corresponds to a compromise between intensity and Q factor.
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42.79.-e Optical elements, devices, and systems

High performance quantum cascade lasers based on three-phonon-resonance design

Qi Jie Wang, Christian Pflügl, Laurent Diehl, Federico Capasso, Tadataka Edamura, Shinichi Furuta, Masamichi Yamanishi, and Hirofumi Kan

Appl. Phys. Lett. 94, 011103 (2009); http://dx.doi.org/10.1063/1.3062981 (3 pages) | Cited 17 times

Online Publication Date: 6 January 2009

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A quantum cascade laser structure based on three-phonon-resonance design is proposed and demonstrated. Devices, emitting at a wavelength of 9 μm, processed into buried ridge waveguide structures with a 3 mm long, 16 μm wide cavity and a high-reflection (HR) coating have shown peak output powers of 1.2 W, slope efficiencies of 1 W/A, threshold current densities of 1.1 kA/cm2, and high wall-plug efficiency of 6% at 300 K. A 3 mm long, 12 μm wide buried-heterostructure device without a HR coating exhibited continuous wave output power of as high as 65 mW from a single facet at 300 K.
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42.55.Px Semiconductor lasers; laser diodes
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Spatial-chirp compensation in dynamical holograms reconstructed with ultrafast lasers

Lluís Martínez-León, Pere Clemente, Enrique Tajahuerce, Gladys Mínguez-Vega, Omel Mendoza-Yero, Mercedes Fernández-Alonso, Jesús Lancis, Vicent Climent, and Pedro Andrés

Appl. Phys. Lett. 94, 011104 (2009); http://dx.doi.org/10.1063/1.3063047 (3 pages) | Cited 8 times

Online Publication Date: 6 January 2009

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A computer generated hologram (CGH) reconstructed with a sub-100-fs laser pulse at the focal plane of a conventional refractive lens experiences a large amount of spatial chirp. We report the shaping of a 12 fs laser pulsed beam by means of a Fourier CGH implemented onto a spatial light modulator, using a hybrid diffractive-refractive lens triplet that provides spatial-chirp compensation. Experimental results demonstrate that parallel, arbitrary, and high-resolution patterning is possible with the proposed device.
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42.40.Jv Computer-generated holograms
42.30.Kq Fourier optics
42.79.Hp Optical processors, correlators, and modulators
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.40.Eq Holographic optical elements; holographic gratings

Surface plasmon resonance via polarization conversion in a weak anisotropic thin film

Yi-Jun Jen and Yi-Hong Liao

Appl. Phys. Lett. 94, 011105 (2009); http://dx.doi.org/10.1063/1.3064132 (3 pages) | Cited 12 times

Online Publication Date: 6 January 2009

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A columnar structured thin film with weak anisotropy is applied to trigger the electromagnetic wave with forbidden polarization state to excite surface plasmon. The precursory work is done here for the conventional Kretschmann configuration [ D. Sarid, Phys. Rev. Lett. 47, 1927 (1981) ] by arranging an anisotropic thin film in the configuration as a three-layered system (prism/anisotropic dielectric film/metal film/isotropic thin film/air). It enables both p-polarized and s-polarized incident waves simultaneously to excite surface plasmon.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Optical properties of Mn1.56Co0.96Ni0.48O4 films studied by spectroscopic ellipsometry

Y. Q. Gao, Z. M. Huang, Y. Hou, J. Wu, Y. J. Ge, and J. H. Chu

Appl. Phys. Lett. 94, 011106 (2009); http://dx.doi.org/10.1063/1.3064133 (3 pages) | Cited 5 times

Online Publication Date: 6 January 2009

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Spectroscopic ellipsometry is used to determine the optical properties of the noncrystalline and crystalline Mn1.56Co0.96Ni0.48O4 (MCN) films prepared by chemical solution deposition method in the range of 250–1100 nm. A pronounced difference in the optical functions is found between 500 and 600 °C. Two distinctive peaks, attributed to the critical points of the MCN films, appear in the optical constant spectra for the films annealed at 600 °C while they are not obvious for the films annealed at 500 °C. The presented results are instructive, further understanding the physical properties of transition metal oxides in theory.
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78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Gh Other heat and thermomechanical treatments

Stabilization of lateral mode transients in high-power broad area semiconductor lasers

Chen Chen, Paul Leisher, Steve Patterson, Paul Crump, Yong Kwan Kim, and Kent Choquette

Appl. Phys. Lett. 94, 011107 (2009); http://dx.doi.org/10.1063/1.3067866 (3 pages) | Cited 1 time

Online Publication Date: 7 January 2009

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The lateral modes in high-power broad area gain-guided semiconductor lasers suffer from instabilities that can lead to self-focusing of the optical modes resulting in the formation of beam filaments. The introduction of cold-cavity index guiding, by means of etched holes, has been previously shown to reduce filament formation in the optical near field. In this work, a simple measurement technique is presented and utilized to characterize the behavior of local intensity fluctuations in the time domain. The use of etched holes to provide index guiding is shown to provide a significant improvement in the temporal stability of the lateral optical modes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Single electron charging in deterministically positioned InAs/InP quantum dots

M. E. Reimer, D. Dalacu, J. Lapointe, P. J. Poole, D. Kim, G. C. Aers, W. R. McKinnon, and R. L. Williams

Appl. Phys. Lett. 94, 011108 (2009); http://dx.doi.org/10.1063/1.3063048 (3 pages) | Cited 10 times

Online Publication Date: 7 January 2009

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We demonstrate precise control of electron charging within a single deterministically positioned InAs/InP quantum dot emitting in the telecommunications band around 1500 nm. Photolumine-scence emission as a function of vertical electric field is used to monitor the electron number within the dot. From Stark shift spectroscopy, we extract strength and orientation for the built-in dipole moment that suggests a uniform InAs dot composition and a configuration in which the electron lies above the hole at zero electric field. The scalable gating technology we employ to electrically contact individual prepositioned quantum dots promises arrays of initialized single spins that can be used for fiber-based quantum information applications.
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73.63.Kv Quantum dots
78.20.Jq Electro-optical effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

High resolution fluorescence imaging of damage regions in H+ ion implanted Nd:MgO:LiNbO3 channel waveguides

Daniel Jaque and Feng Chen

Appl. Phys. Lett. 94, 011109 (2009); http://dx.doi.org/10.1063/1.3064164 (3 pages) | Cited 14 times

Online Publication Date: 7 January 2009

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We report on the fluorescence imaging of channel waveguides fabricated by light ion (H+) implantation in neodymium (Nd) doped MgO:LiNbO3 crystals. The spectroscopic properties of Nd ions have been found to be modified only at the nuclear damage region while remaining unaltered at the electronic one. The fluorescence image of the light ion implanted waveguide has been found to be completely different from that obtained by medium-mass ion implantation, revealing the different waveguide formation mechanisms taking place in each case.
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42.79.Gn Optical waveguides and couplers

Theory of an electrically injected bulk polariton laser

Dmitry Solnyshkov, Eleonora Petrolati, Aldo Di Carlo, and Guillaume Malpuech

Appl. Phys. Lett. 94, 011110 (2009); http://dx.doi.org/10.1063/1.3067859 (3 pages) | Cited 3 times

Online Publication Date: 8 January 2009

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We present the first simulation of an electrically injected polariton laser device based on Bose–Einstein condensation of exciton polaritons in a bulk GaN microcavity. Our simulator self-consistently describes carrier flow, exciton formation and dissociation, and relaxation of exciton polaritons toward the ground state. We find a density-current threshold of about 50 A/cm2 at room temperature, which could be further improved by using polariton lasers based on quantum wells.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Sa Microcavity and microdisk lasers

Absence of amorphous phase in high power femtosecond laser-ablated silicon

Matthew S. Rogers, Costas P. Grigoropoulos, Andrew M. Minor, and Samuel S. Mao

Appl. Phys. Lett. 94, 011111 (2009); http://dx.doi.org/10.1063/1.3052693 (3 pages) | Cited 3 times

Online Publication Date: 8 January 2009

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As femtosecond lasers emerge as viable tools for advanced microscale materials processing, it becomes increasingly important to understand the characteristics of materials resulting from femtosecond laser microablation or micromachining. We conducted transmission electron microscopy experiments to investigate crater structures in silicon produced by repetitive high power femtosecond laser ablation. Comparable experiments of nanosecond laser ablation of silicon were also performed. We found that an amorphous silicon layer that is typically produced in nanosecond laser ablation is absent when the material is irradiated by high power femtosecond laser pulses. Instead, only a defective single crystalline layer was observed in the high power femtosecond laser-ablated silicon crater. Possible mechanisms underlying the formation of the defective single crystalline phase are discussed.
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81.65.-b Surface treatments
42.62.-b Laser applications
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

The formation of light emitting cerium silicates in cerium-doped silicon oxides

Jing Li, Othman Zalloum, Tyler Roschuk, Chenglin Heng, Jacek Wojcik, and Peter Mascher

Appl. Phys. Lett. 94, 011112 (2009); http://dx.doi.org/10.1063/1.3067871 (3 pages) | Cited 4 times

Online Publication Date: 9 January 2009

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Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2Si2O7 or Ce4.667 (SiO4)3O], the presence of which was confirmed by high resolution transmission electron microscopy.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
76.40.+b Diamagnetic and cyclotron resonances
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Jiuru Xu, Martin F. Schubert, Ahmed N. Noemaun, Di Zhu, Jong Kyu Kim, E. Fred Schubert, Min Ho Kim, Hun Jae Chung, Sukho Yoon, Cheolsoo Sone, and Yongjo Park

Appl. Phys. Lett. 94, 011113 (2009); http://dx.doi.org/10.1063/1.3058687 (3 pages) | Cited 37 times

Online Publication Date: 9 January 2009

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Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs.
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85.60.Jb Light-emitting devices
73.63.Hs Quantum wells
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Efficient generation of surface plasmon by single-nanoslit illumination under highly oblique incidence

B. Wang, L. Aigouy, E. Bourhis, J. Gierak, J. P. Hugonin, and P. Lalanne

Appl. Phys. Lett. 94, 011114 (2009); http://dx.doi.org/10.1063/1.3068747 (3 pages) | Cited 27 times

Online Publication Date: 9 January 2009

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Using scanning near-field optical microscopy, we investigate the ability of nanoslits in metallic films to launch surface plasmon polaritons (SPPs) under highly oblique incidence at λ = 975 nm. The SPP generation efficiency is inferred by fitting the recorded near-field data with a simple analytical model. We find a remarkably large efficiency of 20% for the front side of the slit, which is in agreement with recent theoretical predictions relying on a fully vectoral electromagnetic formalism. An even larger efficiency is predicted experimentally (44%) and theoretically (33%) for the rear side. The present near-field analysis provides a direct approach to measure SPP generation efficiencies and may find applications for characterizing SPP devices.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Two-photon patterning of a polymer containing Y-shaped azochromophores

A. Ambrosio, E. Orabona, P. Maddalena, A. Camposeo, M. Polo, A. A. R. Neves, D. Pisignano, A. Carella, F. Borbone, and A. Roviello

Appl. Phys. Lett. 94, 011115 (2009); http://dx.doi.org/10.1063/1.3058820 (3 pages) | Cited 6 times

Online Publication Date: 9 January 2009

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We report on the patterning of the free surface of azo-based polymer films by means of mass migration driven by one- or two-photon absorption. A symmetric donor-acceptor-donor structured Y-shaped azochromophore is specifically synthesized to enhance two-photon absorption in the polymer. The exposure of the polymer film to a focused laser beam results in light-driven mass migration for both one- and two-photon absorptions. Features with subdiffraction resolution (250 nm) are realized and the patterning dynamics is investigated as a function of the light dose. Furthermore, functional photonic structures, such as diffraction gratings with periods ranging between 0.5 and 2.0 μm, have been realized.
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82.50.Pt Multiphoton processes
33.00.00 Molecular properties and interactions with photons
81.16.-c Methods of micro- and nanofabrication and processing
68.47.Mn Polymer surfaces
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Self-pulsing 104 A cm−2 current density discharges in dielectric barrier Al/Al2O3 microplasma devices

D. Yarmolich, Ya. E. Krasik, E. Stambulchik, V. Bernshtam, J. K. Yoon, B. Herrera, S.-J. Park, and J. G. Eden

Appl. Phys. Lett. 94, 011501 (2009); http://dx.doi.org/10.1063/1.3064159 (3 pages) | Cited 5 times

Online Publication Date: 6 January 2009

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Excitation of Al/Al2O3 microplasma devices with 50 μs, 800 V pulses produces, in Ar/H2 gas mixtures at 600 Torr, ∼ 6 A current pulses with a duration of ∼ 30 ns. Corresponding to peak current and power densities of ∼ 104 A/cm2 and ∼ 2.5 GW/cm3, respectively, these pulses are generated in a 10 μs burst in which the voltage self-pulses at a repetition frequency of ∼ 3 MHz. Analysis of the Hα, Hβ, and Ar II emission line profiles yields a plasma density of ∼ 1017 cm−3, and the emission of O IV ions suggests the presence of energetic electrons. Images of the microplasma indicate that the plasma is initiated by surface flashover and extends ∼ 200 μm outside the microcavity.
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52.80.-s Electric discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.-d Plasma devices

Practical implementation of a two-hemisphere plasma absorption probe

Christian Scharwitz, Marc Böke, Jörg Winter, Martin Lapke, Thomas Mussenbrock, and Ralf Peter Brinkmann

Appl. Phys. Lett. 94, 011502 (2009); http://dx.doi.org/10.1063/1.3055609 (3 pages) | Cited 5 times

Online Publication Date: 7 January 2009

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The plasma absorption probe is a recently developed tool for efficient determination of electron densities of low temperature plasmas. The occurrence of multiple absorption signals was a serious drawback for interpretation of the probe data. To remedy this drawback, a spherically symmetric design of an absorption probe is proposed. A spherical probe is tested in experiment and simulation and the suppression of the multiple absorption signals is demonstrated. The proof of principle for the concept is given.
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52.70.Ds Electric and magnetic measurements

Control of cavity cross section in microplasma devices: Luminance and temporal response of 200×100 and 320×160 arrays with parabolic Al2O3 microcavities

K. S. Kim, T. L. Kim, J. K. Yoon, S.-J. Park, and J. G. Eden

Appl. Phys. Lett. 94, 011503 (2009); http://dx.doi.org/10.1063/1.3043685 (3 pages) | Cited 6 times

Online Publication Date: 9 January 2009

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Intense green luminance and luminous efficacies approaching 4 lm/W have been observed for large (50×50 to 320×160) arrays of microplasma devices with parabolic cross-sectional Al2O3 microcavities and conformal aluminum electrodes, operating in Ne/Xe gas mixtures. Precise control of the cross-sectional geometry and surface morphology of the cavities within Al/Al2O3 microplasma devices having a dielectric barrier structure has been achieved with a sequence of wet electrochemical processes. Continuous variation of the cavity cross section between a linear taper and parabolic geometry can be specified and all dimensions controlled to within ±2%. Aluminum electrodes encompassing each cavity are azimuthally symmetric and the inner face of each electrode is conformal to the Al2O3 microcavity wall. Arrays comprising 20 000 devices (in a 200×100 configuration) with a parabolic microcavity wall profile and an emitting aperture 160±2 μm in diameter produce a green luminance >1800 cd/m2 and a peak luminous efficacy of 3.9 lm/W in Ne/30% Xe gas mixtures at a total pressure of 500 Torr. Temporal response measurements show the visible emission rise time of 200–250 ns to be limited only by the rise time of the voltage waveform itself.
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52.75.-d Plasma devices
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Bianalyte mass detection with a single resonant microcantilever

Haitao Yu and Xinxin Li

Appl. Phys. Lett. 94, 011901 (2009); http://dx.doi.org/10.1063/1.3050460 (3 pages) | Cited 10 times

Online Publication Date: 5 January 2009

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Mass-loading detection of multiple kinds of analyte with a single resonant microcantilever is proposed and experimentally validated. By exciting the cantilever in different resonance modes and adsorbing the different analytes at different locations of the cantilever, the specific mass of either kind of analyte can be independently detected. The proposed micromechanical resonant cantilever sensor is designed and fabricated using silicon micromachining techniques. Used as simulant adsorbates, Au and Cr thin films are selectively implemented on the cantilever to verify the bianalyte detecting function. The testing results are consistent with the theoretical analysis, with the detection error being an order of magnitude lower than the analyzed mass.
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87.80.Ek Mechanical and micromechanical techniques
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
06.30.Dr Mass and density
82.80.-d Chemical analysis and related physical methods of analysis
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials

Jeung-hyun Jeong, Hyung-Woo Ahn, Suyoun Lee, Won Mok Kim, Jae-Geun Ha, and Byung-ki Cheong

Appl. Phys. Lett. 94, 011902 (2009); http://dx.doi.org/10.1063/1.3064916 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2009

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A semiquantitative characterization of the interfacial adhesion of phase change materials is developed, which consists of determining critical adhesion temperature (TCA) via measuring the probability of adhesion failure with temperature using patterned films. By comparison of TCA values, Ge-doped SbTe (Ge-ST) is shown to have weaker adhesion than Ge2Sb2Te5 (GST), which results from its limited ability in relaxation of crystallization-induced stress. Nitrogen or oxygen doping in Ge-ST produces significant increase in TCA, close to that of GST. This improvement is due to smaller grain size of N-/O-doped Ge-ST, which facilitates the relaxation of the stress via grain boundary diffusion or sliding.
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68.35.Np Adhesion
61.72.Mm Grain and twin boundaries
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.43.Fs Glasses

The use of nanocavities for the fabrication of ultrathin buried oxide layers

Xin Ou, Reinhard Kögler, Arndt Mücklich, Wolfgang Skorupa, Wolfhard Möller, Xi Wang, and Lasse Vines

Appl. Phys. Lett. 94, 011903 (2009); http://dx.doi.org/10.1063/1.3065478 (3 pages) | Cited 5 times

Online Publication Date: 6 January 2009

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A continuous buried oxide layer with a thickness of only 58 nm is formed in silicon by oxygen implantation at 185 keV with a very low ion fluence of 1×1017 cm−2 and subsequent He implantation. Due to the implanted He efficient oxygen gettering occurs at the implantation induced damage and results in the accumulation of the implanted oxygen as well as of oxygen indiffused from the annealing atmosphere. The morphology and the resistivity of the resulting silicon-on-insulator structure are analyzed by cross section transmission electron microscopy and by cross section scanning spreading resistance microscopy.
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68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.46.-w Structure of nanoscale materials

Determination of third order elastic constants in a complex solid applying coda wave interferometry

C. Payan, V. Garnier, J. Moysan, and P. A. Johnson

Appl. Phys. Lett. 94, 011904 (2009); http://dx.doi.org/10.1063/1.3064129 (3 pages) | Cited 13 times

Online Publication Date: 6 January 2009

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In this letter we describe the development of coda wave interferometry to determine acoustoelastically derived third order nonlinear coefficients of a highly complex material, concrete. Concrete, a structurally heterogeneous and volumetrically mechanically damaged material, is an example of a class of materials that exhibit strong multiple scattering as well as significant elastic nonlinear response. We show that intense scattering can be applied to robustly determine velocity changes at progressively increasing applied stress using coda wave interferometry, and thereby extract nonlinear coefficients.
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07.10.-h Mechanical instruments and equipment
43.58.-e Acoustical measurements and instrumentation
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.dq Other elastic constants

Remote dynamic acoustoelastic testing: Elastic and dissipative acoustic nonlinearities measured under hydrostatic tension and compression

Guillaume Renaud, Samuel Callé, and Marielle Defontaine

Appl. Phys. Lett. 94, 011905 (2009); http://dx.doi.org/10.1063/1.3064137 (3 pages) | Cited 8 times

Online Publication Date: 6 January 2009

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Remote dynamic acoustoelastic testing is proposed to provide a noninvasive and regional measurement of elastic and dissipative acoustic nonlinearities in fluids and solids. The probed medium is dynamically stressed by a low-frequency sinusoidal variation in the hydrostatic pressure in the surrounding fluid. Simultaneously, ultrasound pulses propagate undergoing time of flight and energy modulations, associated with elastic and dissipative nonlinearities, respectively. Acoustic nonlinearities in tension phases can be distinguished from those measured in compression phases. Instantaneous modulations of ultrasound time of flight and energy are analyzed as functions of the instantaneous low-frequency acoustic pressure, similar to a quasistatic acoustoelastic testing.
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81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
46.25.-y Static elasticity
07.64.+z Acoustic instruments and equipment
43.35.Yb Ultrasonic instrumentation and measurement techniques

Size dependence of lattice deformation induced by growth stress in Sn nanowires

Ho Sun Shin, Jin Yu, Jae Yong Song, and Hyun Min Park

Appl. Phys. Lett. 94, 011906 (2009); http://dx.doi.org/10.1063/1.3064167 (3 pages) | Cited 5 times

Online Publication Date: 6 January 2009

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We report on size-dependent lattice expansion of single crystalline Sn nanowires (NWs) with the wire radius (rNW = 6.9–34.7 nm), where the NWs are deposited under confinement of a nanotemplate. The longitudinal lattice expansion in the NWs increases up to approximately 1.0% with the reciprocal radius (1/rNW), contrary to the general theoretical prediction that the surface relaxation causes lattice contraction of nanomaterials. The longitudinal dilatation of the NW lattice can be understood by the Poisson effect induced by the compressive growth stress in the radial direction, which increases with the reciprocal radius.
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81.07.Bc Nanocrystalline materials
61.66.Bi Elemental solids
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
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