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Applied Physics Letters / Volume 94 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS
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Appl. Phys. Lett. 94, 111101 (2009); doi:10.1063/1.3097278 (3 pages)

120 μW peak output power from edge-emitting photonic crystal double-heterostructure nanocavity lasers

Ling Lu, Adam Mock, Tian Yang, Min Hsiung Shih, Eui Hyun Hwang, Mahmood Bagheri, Andrew Stapleton, Stephen Farrell, John O’Brien, and P. Daniel Dapkus

Department of Electrical Engineering Electrophysics Division, University of Southern California, 920 Downey Way, BHE 106, Los Angeles, California 90089, USA

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(Received 23 October 2008; accepted 26 January 2009; published online 16 March 2009)

As an attempt to collect more in-plane emission power out of wavelength size two-dimensional photonic crystal defect lasers, edge-emitting photonic crystal double-heterostructure quantum well membrane lasers were fabricated by shortening the number of cladding periods on one side. 120 μW peak output power was collected from the facet of the single mode laser at room temperature. Laser efficiencies were analyzed and agree very well with three-dimensional finite-difference time-domain modeling.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal defects, finite difference time-domain analysis, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, laser cavity resonators, laser modes, nanophotonics, photonic crystals, quantum well lasers

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 42.60.By

    Design of specific laser systems

  • 42.70.Qs

    Photonic bandgap materials

  • 02.70.Bf

    Finite-difference methods

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3097278

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Top view SEM image of a fabricated PC DH cavity with five PC cladding periods on the left. The heterostructure region is delineated with white dotted lines.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) L-L curves of number 4, 5, and 6 devices. (b) Threshold and lasing wavelength behaviors versus device numbers. (c) Lasing spectrum of the number 5 laser.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Mode profile of the number 5 edge-emitter, calculated by 3D FDTD using the structure information from its top-view SEM image. (a) Intensity plot of the vertical magnetic field (Hz) distribution in x-y plane at the center of the membrane. (b) Hz field profile in the x-z plane through the center of its waveguide core. Index profiles of the device are outlined in both plots in gray.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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