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16 Mar 2009

Volume 94, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 111101 (2009); http://dx.doi.org/10.1063/1.3097278 (3 pages)

Ling Lu, Adam Mock, Tian Yang, Min Hsiung Shih, Eui Hyun Hwang, Mahmood Bagheri, Andrew Stapleton, Stephen Farrell, John O’Brien, and P. Daniel Dapkus
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The fast recovery dynamics of a quantum dot semiconductor optical amplifier

Thomas Erneux, Evgeny A. Viktorov, Paul Mandel, Tomasz Piwonski, Guillaume Huyet, and John Houlihan

Appl. Phys. Lett. 94, 113501 (2009); http://dx.doi.org/10.1063/1.3098361 (3 pages) | Cited 12 times

Online Publication Date: 16 March 2009

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We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which corresponds to phonon-assisted interaction is then used to accurately fit experimental recovery curves and allows an estimation of both the carrier capture and escape rates.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Ah General laser theory

Kinetically controlled, adhesiveless transfer printing using microstructured stamps

Tae-Ho Kim, Andrew Carlson, Jong-Hyun Ahn, Sang Min Won, Shuodao Wang, Yonggang Huang, and John A. Rogers

Appl. Phys. Lett. 94, 113502 (2009); http://dx.doi.org/10.1063/1.3099052 (3 pages) | Cited 11 times

Online Publication Date: 16 March 2009

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This letter describes the physics and application of an approach to transfer printing that uses stamps with microstructures of relief embossed into their surfaces. Experimental measurement of velocity-dependent adhesive strength as a function of relief geometry reveals key scaling properties and provides a means for comparison to theoretical expectation. Formation of transistor devices that use nanoribbons of silicon transfer printed directly onto glass substrates without adhesive layers demonstrates the use of this type of approach for a high-performance (mobilities >325 cm2/V s and on/off ratios >105) single crystal silicon on glass technology.
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85.30.-z Semiconductor devices
81.65.-b Surface treatments
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Phase-change memory devices based on gallium-doped indium oxide

S.-L. Wang, C.-Y. Chen, M.-K. Hsieh, W.-C. Lee, A. H. Kung, and L.-H. Peng

Appl. Phys. Lett. 94, 113503 (2009); http://dx.doi.org/10.1063/1.3089238 (3 pages) | Cited 3 times

Online Publication Date: 18 March 2009

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We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼ 250 °C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO.
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84.30.Sk Pulse and digital circuits
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Work function engineering in low-temperature metals

Nicholas D. Orf, Iain D. Baikie, Ofer Shapira, and Yoel Fink

Appl. Phys. Lett. 94, 113504 (2009); http://dx.doi.org/10.1063/1.3089677 (3 pages) | Cited 10 times

Online Publication Date: 18 March 2009

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Semiconductor devices require conducting electrodes with disparate work functions for their operation. Of recent interest are fluidic processing approaches for large-area devices, which present unique challenges in the identification of materials having disparate work functions but similar melting temperatures. Such materials may be engineered by alloying with low-melting temperature metals. As a demonstration, the work function of tin and four binary tin alloys is measured by ultraviolet photoemission spectroscopy and Kelvin probe method. We demonstrate the control of metal work function by 600 meV through alloying while keeping the melting temperature within a 140 °C range.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer

S. Kasai, T. Katagiri, J. Takayanagi, K. Kawase, and T. Ouchi

Appl. Phys. Lett. 94, 113505 (2009); http://dx.doi.org/10.1063/1.3103278 (3 pages) | Cited 6 times

Online Publication Date: 18 March 2009

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A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz, including the phonon resonance frequency range, has been developed using a transferred thin-film photoconductive switch (PCS) detector. The thin-film PCSs, based on low-temperature-grown GaAs, were fabricated using epitaxial layer transfer onto high-resistivity Si substrates. We observed a reduction of phonon resonant absorption, including between 7 and 10 THz, in a forward radiation configuration. Numerically calculated absorption spectra show good agreement with our experimental results. This technique will provide compact, broadband TDS systems.
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85.60.-q Optoelectronic devices

Monolithic parallel tandem organic photovoltaic cell with transparent carbon nanotube interlayer

S. Tanaka, K. Mielczarek, R. Ovalle-Robles, B. Wang, D. Hsu, and A. A. Zakhidov

Appl. Phys. Lett. 94, 113506 (2009); http://dx.doi.org/10.1063/1.3095594 (3 pages) | Cited 11 times

Online Publication Date: 19 March 2009

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We demonstrate an organic photovoltaic cell with a monolithic tandem structure in parallel connection. Transparent multiwalled carbon nanotube sheets are used as an interlayer anode electrode for this parallel tandem. The characteristics of front and back cells are measured independently. The short circuit current density of the parallel tandem cell is larger than the currents of each individual cell. The wavelength dependence of photocurrent for the parallel tandem cell shows the superposition spectrum of the two spectral sensitivities of the front and back cells. The monolithic three-electrode photovoltaic cell indeed operates as a parallel tandem with improved efficiency.
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84.60.Jt Photoelectric conversion

Self-organized two-dimensional onions

Shenqiang Ren, Robert M. Briber, and Manfred Wuttig

Appl. Phys. Lett. 94, 113507 (2009); http://dx.doi.org/10.1063/1.3101373 (3 pages) | Cited 3 times

Online Publication Date: 19 March 2009

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Spontaneously self-assembled onion-type nanostructures based on block copolymers as templating materials are reported. Polystyrene-poly(ethylene oxide) diblock copolymer containing CoFe2O4 and Pb1.1(Zr0.53Ti0.47)O3 precursors segregated to the two microdomains forms well-ordered templated lamellar structures. Onion-type nanostructures have been induced by room temperature solvent annealing for 64 h in a magnetic field of 0.8 T oriented perpendicularly to the plane of film. The recorded images suggest that the Lorentz force acting on charges in the paraelectric precursor induces a circular component of the diffusion flux that leads to the onion formation. This templating process opens a route for nanometer-scale patterning of magnetic toroids.
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81.16.Rf Micro- and nanoscale pattern formation
61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.16.Dn Self-assembly
81.40.Gh Other heat and thermomechanical treatments
81.07.Nb Molecular nanostructures

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du

Appl. Phys. Lett. 94, 113508 (2009); http://dx.doi.org/10.1063/1.3103272 (3 pages) | Cited 15 times

Online Publication Date: 20 March 2009

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Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼ 104 at ±2 V and a dark current of 0.5 nA at a reverse bias of −2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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