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16 Mar 2009

Volume 94, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 94, 111101 (2009); http://dx.doi.org/10.1063/1.3097278 (3 pages)

Ling Lu, Adam Mock, Tian Yang, Min Hsiung Shih, Eui Hyun Hwang, Mahmood Bagheri, Andrew Stapleton, Stephen Farrell, John O’Brien, and P. Daniel Dapkus
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Erratum: “High performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator” [Appl. Phys. Lett. 93, 242111 (2008)]

J. B. Kim, C. Fuentes-Hernandez, and B. Kippelen

Appl. Phys. Lett. 94, 119901 (2009); http://dx.doi.org/10.1063/1.3106227 (1 page)

Online Publication Date: 16 March 2009

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Abstract Unavailable
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99.10.Cd Errata
85.30.Tv Field effect devices
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