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16 Mar 2009

Volume 94, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 111101 (2009); http://dx.doi.org/10.1063/1.3097278 (3 pages)

Ling Lu, Adam Mock, Tian Yang, Min Hsiung Shih, Eui Hyun Hwang, Mahmood Bagheri, Andrew Stapleton, Stephen Farrell, John O’Brien, and P. Daniel Dapkus
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120 μW peak output power from edge-emitting photonic crystal double-heterostructure nanocavity lasers

Ling Lu, Adam Mock, Tian Yang, Min Hsiung Shih, Eui Hyun Hwang, Mahmood Bagheri, Andrew Stapleton, Stephen Farrell, John O’Brien, and P. Daniel Dapkus

Appl. Phys. Lett. 94, 111101 (2009); http://dx.doi.org/10.1063/1.3097278 (3 pages) | Cited 9 times

Online Publication Date: 16 March 2009

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As an attempt to collect more in-plane emission power out of wavelength size two-dimensional photonic crystal defect lasers, edge-emitting photonic crystal double-heterostructure quantum well membrane lasers were fabricated by shortening the number of cladding periods on one side. 120 μW peak output power was collected from the facet of the single mode laser at room temperature. Laser efficiencies were analyzed and agree very well with three-dimensional finite-difference time-domain modeling.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
02.70.Bf Finite-difference methods

A wireless-compatible optics-free fluorescent array reader

M. Anwar, T. Aytur, and P. Matsudaira

Appl. Phys. Lett. 94, 111102 (2009); http://dx.doi.org/10.1063/1.3097008 (3 pages)

Online Publication Date: 16 March 2009

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Optical-based bioassays, particularly fluorescent-based arrays, form the basis for biological detection in both biological and clinical assays, yet their use is restricted by the need for sensitive optical detectors and optics. To address this, we developed an integrated circuit-based fluorescent imaging platform that functions without the use of optics while directly integrating electronics, enabling a low-cost integrated solution. Additionally, we incorporate a wireless interface, enabling optical detection within any biological environment. As a proof of concept, we demonstrate the detection of 20 nM of Streptavidin on an array without the use of optical filters and lenses.
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87.80.-y Biophysical techniques (research methods)
42.79.Pw Imaging detectors and sensors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

N. Nepal, J. M. Zavada, D. S. Lee, A. J. Steckl, A. Sedhain, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 94, 111103 (2009); http://dx.doi.org/10.1063/1.3097808 (3 pages) | Cited 3 times

Online Publication Date: 16 March 2009

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The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped AlxGa1−xN (0.39 ≤ x ≤ 1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x = 1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm3+ ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.
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78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
61.72.U- Doping and impurity implantation
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Parametric amplification and wavelength conversion in the 1040–1090 nm band by use of a photonic crystal fiber

T. Sylvestre, A. Kudlinski, A. Mussot, J. F. Gleyze, A. Jolly, and H. Maillotte

Appl. Phys. Lett. 94, 111104 (2009); http://dx.doi.org/10.1063/1.3100192 (3 pages) | Cited 7 times

Online Publication Date: 16 March 2009

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Highly efficient parametric amplification and wavelength conversion have been demonstrated in the 1040–1090 nm band. A nonlinear photonic crystal fiber was used to provide the anomalous dispersion required for phase matching at 1 μm. A 40 dB maximum gain and +35 dB idler conversion efficiency have been achieved in the subnanosecond pulsed regime and by using a spectrally filtered supercontinuum source as a small signal.
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42.65.Lm Parametric down conversion and production of entangled photons
42.70.Qs Photonic bandgap materials
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Ci Filters, zone plates, and polarizers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Focusing surface plasmons to multiple focal spots with a launching diffraction grating

Chenglong Zhao, Jiayuan Wang, Xiaofei Wu, and Jiasen Zhang

Appl. Phys. Lett. 94, 111105 (2009); http://dx.doi.org/10.1063/1.3100195 (3 pages) | Cited 7 times

Online Publication Date: 16 March 2009

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We propose a surface plasmon launching diffraction grating (SPLDG) to obtain multiple focal spots of SPs with nearly equal intensity. The SPLDG is composed of grooves that are located on concentric arcs, whose projections on the chord form a grating. When the incident plane wave illuminates the grating, SPs launched and diffracted into different directions will be approximately focused to multispots on a circle. Here, we obtain three and five focuses and the numerical simulation agrees well with the experiment.
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42.79.Dj Gratings
42.79.Wc Optical coatings
42.86.+b Optical workshop techniques

GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer

You-Ru Lin, Yi-Feng Lai, Chuan-Pu Liu, and Hao-Hsiung Lin

Appl. Phys. Lett. 94, 111106 (2009); http://dx.doi.org/10.1063/1.3100191 (3 pages) | Cited 1 time

Online Publication Date: 16 March 2009

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We report the optical properties of a composite structure comprising a type-II GaAs0.7Sb0.3/GaAs quantum well (QW) and an InAs quantum-dot (QD) layer adjacent to the QW. The low-temperature photoluminescence (PL) of the composite structure with a 5-nm-thick GaAs spacer demonstrates a redshift of 44 meV, as compared with that of GaAs0.7Sb0.3/GaAs single QW at low excitation level. The redshift reveals the existence of local potential minimums, induced by the stress exerted by the adjacent QDs, in the type-II QW. At higher temperature, the composite structure shows stronger PL intensity than the GaAs0.7Sb0.3 QW, indicating the potential of the applications to laser diodes.
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78.67.De Quantum wells
78.67.Hc Quantum dots
81.07.Ta Quantum dots
81.07.St Quantum wells
78.55.Cr III-V semiconductors

Submonolayer quantum dot infrared photodetector

David Z.-Y. Ting, Sumith V. Bandara, Sarath D. Gunapala, Jason M. Mumolo, Sam A. Keo, Cory J. Hill, John K. Liu, Edward R. Blazejewski, Sir B. Rafol, and Yia-Chung Chang

Appl. Phys. Lett. 94, 111107 (2009); http://dx.doi.org/10.1063/1.3095812 (3 pages) | Cited 15 times

Online Publication Date: 17 March 2009

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We describe the concept of the submonolayer quantum dot infrared photodetector (SML QDIP) and report experimental device results on long-wavelength infrared detection. An SML QDIP structure was fabricated into megapixel focal plane arrays, which produced clear infrared images up to 80 K. Detectors in the focal plane showed a responsivity peak at 7.8 μm and noise equivalent temperature difference of 33 mK at 70 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Intense multimicrojoule high-order harmonics generated from neutral atoms of In2O3 nanoparticles

L. B. Elouga Bom, R. A. Ganeev, J. Abdul-Hadi, F. Vidal, and T. Ozaki

Appl. Phys. Lett. 94, 111108 (2009); http://dx.doi.org/10.1063/1.3100772 (3 pages) | Cited 6 times

Online Publication Date: 17 March 2009

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We studied high-order harmonic generation from plasma that contains an abundance of indium oxide nanoparticles. We found that harmonics from nanoparticle-containing plasma are considerably more intense than from plasma produced on the In2O3 bulk target, with high-order harmonic energy ranging from 6 μJ (for the ninth harmonic) to 1 μJ (for the 17th harmonic) in the former case. The harmonic cutoff from nanoparticles was at the 21st order, which is lower than that observed using indium oxide solid target. By comparing the harmonic spectra obtained from solid and nanoparticle indium oxide targets, we concluded that intense harmonics in the latter case are dominantly generated from neutral atoms of the In2O3 nanoparticles.
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52.38.Dx Laser light absorption in plasmas (collisional, parametric, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.27.Lw Dusty or complex plasmas; plasma crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.Mf Laser ablation

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas

Appl. Phys. Lett. 94, 111109 (2009); http://dx.doi.org/10.1063/1.3100773 (3 pages) | Cited 42 times

Online Publication Date: 17 March 2009

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Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3×108 cm−2) is as high as 64%. The measured nonradiative coefficient A varies from 6×107 to 2×108 s−1 as the dislocation density increases from 5.3×108 to 5.7×109 cm−2, respectively.
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78.67.De Quantum wells
81.07.St Quantum wells
73.63.Hs Quantum wells
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

All-chalcogenide glass omnidirectional photonic band gap variable infrared filters

H. Esat Kondakci, Mecit Yaman, Ozlem Koylu, Aykutlu Dana, and Mehmet Bayindir

Appl. Phys. Lett. 94, 111110 (2009); http://dx.doi.org/10.1063/1.3103279 (3 pages) | Cited 7 times

Online Publication Date: 18 March 2009

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We report on the design, fabrication, and characterization of spatially variable infrared photonic band gap filter that consists of thermally evaporated, high refractive index contrast, amorphous chalcogenide glass multilayers. Due to graded thickness structure, the filter exhibits a position dependent stop band and a cavity mode ranging from 1.8 to 3.4 μm wavelengths. Reflection measurements on the variable filter agree well with theoretical calculations. These results pave the way to low-loss infrared mirrors, filters, spectral imaging, and miniaturized spectrometers at infrared region.
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42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
42.79.Wc Optical coatings

Single photon emission from a site-controlled quantum dot-micropillar cavity system

C. Schneider, T. Heindel, A. Huggenberger, P. Weinmann, C. Kistner, M. Kamp, S. Reitzenstein, S. Höfling, and A. Forchel

Appl. Phys. Lett. 94, 111111 (2009); http://dx.doi.org/10.1063/1.3097016 (3 pages) | Cited 26 times

Online Publication Date: 19 March 2009

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We demonstrate the deterministic integration of single site-controlled quantum dots (SCQDs) into micropillar cavities. Spatial resonance between single positioned QDs and GaAs/AlAs micropillar cavities was achieved using cross markers for precise SCQD-cavity alignment. Cavity effects are clearly reflected in an enhanced photoluminescence intensity when tuning SCQD emission lines through the fundamental cavity resonance. Single photon emission from a spatially and spectrally coupled SCQD-resonator system is confirmed by photon autocorrelation measurements yielding a g(2)(0) value of 0.12.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Slow surface phonon polaritons for sensing in the midinfrared spectrum

Igal Balin, Nir Dahan, Vladimir Kleiner, and Erez Hasman

Appl. Phys. Lett. 94, 111112 (2009); http://dx.doi.org/10.1063/1.3098360 (3 pages) | Cited 11 times

Online Publication Date: 19 March 2009

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We demonstrate a reflection-type sensor in the midinfrared spectra based on resonant excitation of surface phonon polaritons (SPhPs). In this range, SPhPs are characterized by the high density of states associated with slow surface waves that lead to enhanced resonance absorption. Delocalized SPhPs were excited by irradiating TM-polarized light on a one-dimensional grating embedded in a SiC substrate. The sensor response was characterized by changing the refractive index (RI) of a lossless CO2 gas. A detection limit of 2×10−5 RI units was obtained at a wavelength of 11.9 μm.
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78.30.-j Infrared and Raman spectra
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
68.35.Ja Surface and interface dynamics and vibrations
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Efficient generation of energy-tunable entangled photons in a semiconductor microcavity

Hisaki Oka, Goro Oohata, and Hajime Ishihara

Appl. Phys. Lett. 94, 111113 (2009); http://dx.doi.org/10.1063/1.3103209 (3 pages) | Cited 6 times

Online Publication Date: 20 March 2009

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A scheme is proposed for the generation of polarization- and frequency-entangled photons in a semiconductor planar microcavity. Photon entanglement can be achieved by converting two lower polariton branches with symmetric in-plane momenta into lower and upper polariton branches with zero in-plane momentum via a biexciton state. The phase-matching condition is satisfied for a microcavity with cavity detuning equal to the biexciton binding energy. The generation efficiency and energy control of the entangled photons are demonstrated for a CuCl microcavity as an example.
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42.50.-p Quantum optics
03.65.Ud Entanglement and quantum nonlocality (e.g. EPR paradox, Bell's inequalities, GHZ states, etc.)
71.35.-y Excitons and related phenomena
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.45.-d Collective effects

Distributed feedback all-organic microlaser based on holographic polymer dispersed liquid crystals

L. Criante, D. E. Lucchetta, F. Vita, R. Castagna, and F. Simoni

Appl. Phys. Lett. 94, 111114 (2009); http://dx.doi.org/10.1063/1.3103276 (3 pages) | Cited 3 times

Online Publication Date: 20 March 2009

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An optically pumped vertically emitting all-organic laser, based on a holographic polymer dispersed liquid crystal reflection grating operating in a distributed feedback configuration, is presented. The used experimental geometry overcomes the main drawbacks characterizing similar systems, allowing virtually infinite operations and absence of damages associated with the high energy of the optical pumping.
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42.55.-f Lasers
42.40.Eq Holographic optical elements; holographic gratings

Strong coupling through optical positioning of a quantum dot in a photonic crystal cavity

Susanna M. Thon, Matthew T. Rakher, Hyochul Kim, Jan Gudat, William T. M. Irvine, Pierre M. Petroff, and Dirk Bouwmeester

Appl. Phys. Lett. 94, 111115 (2009); http://dx.doi.org/10.1063/1.3103885 (3 pages) | Cited 26 times

Online Publication Date: 20 March 2009

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Single self-assembled InAs quantum dots embedded in GaAs photonic crystal defect cavities are a promising system for cavity quantum electrodynamics experiments and quantum information schemes. Achieving controllable coupling in these small mode volume devices is challenging due to the random nucleation locations of individual quantum dots. We have developed an all optical scheme for locating the position of single dots with sub-10 nm accuracy. Using this method, we are able to deterministically reach the strong coupling regime with a spatial positioning success rate of approximately 70%. This flexible method should be applicable to other microcavity architectures and emitter systems.
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78.67.Hc Quantum dots
42.70.Qs Photonic bandgap materials
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
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