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Applied Physics Letters / Volume 94 / Issue 12 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 94, 123306 (2009); http://dx.doi.org/10.1063/1.3107267 (3 pages)

Effectiveness of p-dopants in an organic hole transporting material

Jae-Hyun Lee, Dong-Seok Leem, Hyong-Jun Kim, and Jang-Joo Kim

Department of Materials Science and Engineering and the Center for OLED, Seoul National University, Seoul 151-742, South Korea

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(Received 24 December 2008; accepted 6 March 2009; published online 27 March 2009)

We investigated the effectiveness of p-dopants to generate holes in a hole transporting material by comparing the absorption in visible-near-infrared and infrared regions and current density-voltage characteristics. CuI, MoO3, and ReO3 having different work functions were doped in a hole transporting organic material, 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2TNATA). Formation of charge transfer (CT) complexes increases linearly with increasing doping concentration for all the dopants. Dopants with higher work function (ReO3>MoO3>CuI) are more effective in the formation of CT complexes and in the generation of the charges in the doped films.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, current density, doping, hole mobility, impurity states, infrared spectra, molybdenum compounds, organic compounds, rhenium compounds, visible spectra, work function

PACS

  • 78.66.Qn

    Polymers; organic compounds

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 78.30.Jw

    Organic compounds, polymers

  • 78.40.Me

    Organic compounds and polymers

  • 71.55.Ht

    Other nonmetals

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 73.50.Dn

    Low-field transport and mobility; piezoresistance

  • 61.72.up

    Other materials

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3107267

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) UV-Vis-NIR absorbance spectra of doped (25 mol %) 2TNATA films with ReO3 (dash-dotted curve), MoO3 (dashed curve), CuI (dotted curve), and undoped 2TNATA film (solid curve). Inset: the molecular structure of 2TNATA (b) absorbance of the second CT complex peak vs doping concentration for ReO3 (inverse triangle), MoO3 (triangle), and CuI (circle) doped 2TNATA films.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
FT-IR spectra of doped 2TNATA films with 25 mol % ReO3 (dash-dotted curve), MoO3 (dashed curve), and CuI (dotted curve) and undoped 2TNATA film (solid curve).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
The J-V characteristics of hole only devices fabricated using doped 2TNATA films with 25 mol % ReO3 (inverse triangle), MoO3 (triangle), and CuI (circle), and undoped 2TNATA film (rectangle). Lines with the slope of 1 and 2 are shown for references.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Carrier density vs doping concentration for ReO3 (inverse triangle), MoO3 (triangle), and CuI (circle) doped 2TNATA films.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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