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23 Mar 2009

Volume 94, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 94, 122502 (2009); http://dx.doi.org/10.1063/1.3100783 (3 pages)

Junhua Wang, Yisheng Shi, Juexian Cao, and Ruqian Wu
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Direct-gap exciton and optical absorption in the Ge/SiGe quantum well system

Yu-Hsuan Kuo and Yin-Shun Li

Appl. Phys. Lett. 94, 121101 (2009); http://dx.doi.org/10.1063/1.3106621 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2009

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The ground-level direct-gap excitons and quantum-confined Stark effect (QCSE) electroabsorption in the Ge/SiGe quantum well structures are studied using the tunneling resonance modeling and the variational method. The exciton radius, transition energy, binding energy, and optical oscillator strength are calculated for various quantum well thicknesses (5–35 nm) and vertical electric fields (0–105 V/cm) simultaneously. The relative direct-gap-to-indirect-gap absorption ratios are compared. A quantum well implementation scheme with relatively broad thickness range of ∼ 5–15 nm can provide moderate excitonic absorption and contrast ratio for long wavelength operation. This investigation will improve the QCSE electroabsorption efficiency in the Ge quantum well system.
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73.21.Fg Quantum wells
73.40.Gk Tunneling
78.67.De Quantum wells
78.20.Jq Electro-optical effects
71.35.-y Excitons and related phenomena
68.65.Fg Quantum wells

Scalable implementation of strongly coupled cavity-quantum dot devices

A. Dousse, J. Suffczyński, R. Braive, A. Miard, A. Lemaître, I. Sagnes, L. Lanco, J. Bloch, P. Voisin, and P. Senellart

Appl. Phys. Lett. 94, 121102 (2009); http://dx.doi.org/10.1063/1.3100781 (3 pages) | Cited 15 times

Online Publication Date: 23 March 2009

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Using low temperature in situ optical lithography, we fabricate pillar microcavities with quality factors around 2×104. Each pillar embeds a spatially and spectrally resonant single InGaAs quantum dot (QD). Light-matter strong coupling regime is reached for 100% of the fabricated pillars for which the resonance can be tuned through temperature. This is a demonstration of scalable and deterministic implementation of strongly coupled cavity-QD devices.
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81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Hp Lithography, masks and pattern transfer

Acoustoelectric luminescence from a field-effect n-i-p lateral junction

Giorgio De Simoni, Vincenzo Piazza, Lucia Sorba, Giorgio Biasiol, and Fabio Beltram

Appl. Phys. Lett. 94, 121103 (2009); http://dx.doi.org/10.1063/1.3106108 (3 pages) | Cited 4 times

Online Publication Date: 23 March 2009

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A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
07.07.Mp Transducers
73.21.Fg Quantum wells
78.67.De Quantum wells
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High-speed switching of spin polarization for proposed spin-photon memory

V. Zayets and K. Ando

Appl. Phys. Lett. 94, 121104 (2009); http://dx.doi.org/10.1063/1.3106637 (3 pages) | Cited 3 times

Online Publication Date: 24 March 2009

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Nonvolatile high-speed optical memory is proposed, which utilizes the magnetization reversal of nanomagnet by spin-polarized photoexcited electrons. It was demonstrated experimentally that one selected pulse from the train of two optical data pulses with interval of 450 fs can solely excite the spin-polarized electrons without a disturbance from the unselected optical data pulse. That proves feasibility for operation of the memory with speed of 2.2 Tbits/s.
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84.30.Sk Pulse and digital circuits
75.60.Jk Magnetization reversal mechanisms
72.25.Fe Optical creation of spin polarized carriers

Mid-infrared tunable two-dimensional Talbot array illuminator

P. Maddaloni, M. Paturzo, P. Ferraro, P. Malara, P. De Natale, M. Gioffrè, G. Coppola, and M. Iodice

Appl. Phys. Lett. 94, 121105 (2009); http://dx.doi.org/10.1063/1.3109794 (3 pages) | Cited 5 times

Online Publication Date: 26 March 2009

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We report the realization and characterization of a tunable, two-dimensional Talbot array illuminator for mid-infrared (MIR) wavelengths. A phase array, prepared by deposing tin-doped indium oxide electrodes on a square-lattice-geometry poled LiNbO3 sample, is illuminated by a difference-frequency generator emitting at 3 μm. Then, combining the electro-optic with the Talbot effect allows generation of a variety of light patterns under different values of distance and external electric field. Several potential applications with great relevance to the MIR spectral region are discussed.
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42.30.-d Imaging and optical processing
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Dj Gratings

High quality factor photonic crystal nanobeam cavities

Parag B. Deotare, Murray W. McCutcheon, Ian W. Frank, Mughees Khan, and Marko Lončar

Appl. Phys. Lett. 94, 121106 (2009); http://dx.doi.org/10.1063/1.3107263 (3 pages) | Cited 89 times

Online Publication Date: 27 March 2009

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We investigate the design, fabrication, and experimental characterization of high quality factor photonic crystal nanobeam cavities in silicon. Using a five-hole tapered one-dimensional photonic crystal mirror and precise control of the cavity length, we designed cavities with theoretical quality factors as high as 1.4×107. By detecting the cross-polarized resonantly scattered light from a normally incident laser beam, we measure a quality factor of nearly 7.5×105. The effect of cavity size on mode frequency and quality factor was simulated and then verified experimentally.
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42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
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