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23 Mar 2009

Volume 94, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 94, 122502 (2009); http://dx.doi.org/10.1063/1.3100783 (3 pages)

Junhua Wang, Yisheng Shi, Juexian Cao, and Ruqian Wu
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Interface resistivity and lifetime of thin film transistors exposed to ambient air

Andraž Petrović and Gvido Bratina

Appl. Phys. Lett. 94, 123301 (2009); http://dx.doi.org/10.1063/1.3105984 (3 pages) | Cited 6 times

Online Publication Date: 23 March 2009

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We found that different contributions to the resistivity in pentacene-based organic thin film transistors exhibit different time dependences upon extended exposure to ambient air. Our Kelvin force microscopy data show that contact resistance at the drain/source interface and the resistance of the pentacene channel initially decrease and after approximately 6 h monotonically increase. The contact resistance at the source/pentacene interface, on the other hand, initially decreases and exhibits only minor increase after 6 h. Such behavior is interpreted in terms of competing effect of oxygen and water penetration in the pentacene channel and in the interfacial region.
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85.30.Tv Field effect devices
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Organic solar cells using few-walled carbon nanotubes electrode controlled by the balance between sheet resistance and the transparency

Yiyu Feng, Xiaohui Ju, Wei Feng, Hongbo Zhang, Yingwen Cheng, Jie Liu, Akihiko Fujii, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 94, 123302 (2009); http://dx.doi.org/10.1063/1.3103557 (3 pages) | Cited 16 times

Online Publication Date: 25 March 2009

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Organic photovoltaic devices (OPD) using high conductive transparent few-walled carbon nanotubes (FWNT) film prepared by spraying was fabricated as a selective hole collection. Photovoltaic response with different sheet resistance (Rs) and the transparency (T) of FWNT film was investigated. Maximum efficiency of OPD up to 0.61% with the structure of FWNT (T = 70%, Rs = 86 Ω/◻)/poly(3-hexylthiophene): [6-6]phenyl-C61-butyric acid methyl ester/Al demonstrates a promising alternative of ITO (0.68%) with almost identical operation. The performance improvement results from the optimal balance between sheet resistance and transparency with three-dimensional network interface between nanotubes and polymers.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
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Nanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices

Tianhang Zheng, Wallace C. H. Choy, and Yuxiu Sun

Appl. Phys. Lett. 94, 123303 (2009); http://dx.doi.org/10.1063/1.3099038 (3 pages) | Cited 6 times

Online Publication Date: 25 March 2009

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We report a hybrid nanoparticle/organic device with strong resonant tunneling behavior by introducing ligand-capped Ag nanoparticles between indium tin oxide and hole transport layer in small molecule organic light-emitting devices. The dependences of resonant tunneling current on the thickness of the organic layers are investigated. For the optimized device, a peak-to-valley current ratio as high as 4.5 and narrow peak width about 1.8 V are obtained. Combining with the analysis of current-voltage behavior, the mechanism based on the charge trapping effect of Ag nanoparticles is proposed to interpret the operation of the hybrid device. Finally, the emission characteristics of hybrid devices are also studied.
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85.60.Jb Light-emitting devices
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.jd Thickness
73.40.Gk Tunneling
73.61.-r Electrical properties of specific thin films
81.07.Pr Organic-inorganic hybrid nanostructures
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Determining ionizing radiation using sensors based on organic semiconducting material

Harshil N. Raval, Shree Prakash Tiwari, Ramesh R. Navan, and V. Ramgopal Rao

Appl. Phys. Lett. 94, 123304 (2009); http://dx.doi.org/10.1063/1.3107266 (3 pages) | Cited 11 times

Online Publication Date: 26 March 2009

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The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.
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85.30.Tv Field effect devices
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
87.57.uq Dosimetry
85.30.De Semiconductor-device characterization, design, and modeling
61.80.-x Physical radiation effects, radiation damage
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Rapid prototyping encapsulation for polymer light-emitting lasers

Luana Persano, Andrea Camposeo, Pompilio Del Carro, Pierpaolo Solaro, Roberto Cingolani, Patrizia Boffi, and Dario Pisignano

Appl. Phys. Lett. 94, 123305 (2009); http://dx.doi.org/10.1063/1.3100406 (3 pages) | Cited 3 times

Online Publication Date: 26 March 2009

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Rapid prototyping of packaging elements realized by stereolithography for the encapsulation of plastic optoelectronic devices is demonstrated. We measure the operational lifetime behavior of a polymeric laser before and after the device packaging. The operational lifetime of a polymer vertical-cavity surface-emitting laser is increased by a factor of three upon continuous pumping at an excitation fluence (250 μJ/cm2) three times larger than the lasing threshold, corresponding to an overall laser duration of more than 3×103 h at a repetition rate of 10 Hz. These findings suggest rapid prototyping stereolithography as promising highly scalable technology for the encapsulation of organic light-emitting devices.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Jk Polymers and organics
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Effectiveness of p-dopants in an organic hole transporting material

Jae-Hyun Lee, Dong-Seok Leem, Hyong-Jun Kim, and Jang-Joo Kim

Appl. Phys. Lett. 94, 123306 (2009); http://dx.doi.org/10.1063/1.3107267 (3 pages) | Cited 25 times

Online Publication Date: 27 March 2009

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We investigated the effectiveness of p-dopants to generate holes in a hole transporting material by comparing the absorption in visible-near-infrared and infrared regions and current density-voltage characteristics. CuI, MoO3, and ReO3 having different work functions were doped in a hole transporting organic material, 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2TNATA). Formation of charge transfer (CT) complexes increases linearly with increasing doping concentration for all the dopants. Dopants with higher work function (ReO3>MoO3>CuI) are more effective in the formation of CT complexes and in the generation of the charges in the doped films.
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78.66.Qn Polymers; organic compounds
73.30.+y Surface double layers, Schottky barriers, and work functions
78.30.Jw Organic compounds, polymers
78.40.Me Organic compounds and polymers
71.55.Ht Other nonmetals
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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Electroluminescence from a pentacene based ambipolar organic field-effect transistor

Martin Schidleja, Christian Melzer, and Heinz von Seggern

Appl. Phys. Lett. 94, 123307 (2009); http://dx.doi.org/10.1063/1.3107268 (3 pages) | Cited 9 times

Online Publication Date: 27 March 2009

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In this letter light emission from a pentacene-based ambipolar organic field-effect transistor is reported. Electroluminescence appears from a narrow region extending over the entire transistor channel width. The position of the light-emitting recombination zone is spatially controllable by the applied voltages. The current/voltage characteristics of the ambipolar device exhibit a hysteresis caused by trapped electrons in the transistor channel, which is also mirrored in the voltage dependent position of the light-emitting region. From the voltage dependence of the light intensity it can be concluded that Ohmic contacts are formed between pentacene and the utilized metal contacts calcium and gold.
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85.30.Tv Field effect devices
85.60.Jb Light-emitting devices
85.30.Pq Bipolar transistors
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Micro-organic single crystalline phototransistors of 7,7,8,8-tetracyanoquinodimethane and tetrathiafulvalene

Hui Jiang, Xianjin Yang, Zhenduo Cui, Yongchang Liu, Hongxiang Li, and Wenping Hu

Appl. Phys. Lett. 94, 123308 (2009); http://dx.doi.org/10.1063/1.3109785 (3 pages) | Cited 14 times

Online Publication Date: 27 March 2009

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Classical p-type and n-type organic single crystals, tetrathiafulvalene (TTF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ), are introduced to investigate photoswitch and phototransistor. High photoresponsivity, low persistent conductivity, and response reversibility can be found in single crystalline TCNQ, while TTF has large persistent conductivity when the light is switched on and off. It is probably attributed to different band gaps and the compactness of molecular packing. Single crystalline TCNQ combines light detection, switching, signal amplification in a single device and realization of multiple functions which exhibit a very promising potential for the fabrication of organic photoelectric devices.
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85.60.Dw Photodiodes; phototransistors; photoresistors
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