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Applied Physics Letters / Volume 94 / Issue 14 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 94, 142104 (2009); http://dx.doi.org/10.1063/1.3112602 (3 pages)

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki

NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan

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(Received 11 December 2008; accepted 13 March 2009; published online 7 April 2009)

We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

cryogenics, drag, elemental semiconductors, Hall effect devices, silicon

PACS

  • 85.30.Fg

    Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3112602

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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