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6 Apr 2009

Volume 94, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 94, 141901 (2009); http://dx.doi.org/10.1063/1.3111813 (3 pages)

G. S. Huang (黄高山), S. Kiravittaya, V. A. Bolaños Quiñones, F. Ding (丁飞), M. Benyoucef, A. Rastelli, Y. F. Mei (梅永丰), and O. G. Schmidt
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Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, F. C. Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, and G. Luka

Appl. Phys. Lett. 94, 143501 (2009); http://dx.doi.org/10.1063/1.3114442 (3 pages) | Cited 14 times

Online Publication Date: 6 April 2009

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Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Ei Rectification
85.40.Sz Deposition technology

Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

Day-Shan Liu, Tan-Wei Lin, Bing-Wen Huang, Fuh-Shyang Juang, Po-Hsun Lei, and Chen-Ze Hu

Appl. Phys. Lett. 94, 143502 (2009); http://dx.doi.org/10.1063/1.3116613 (3 pages) | Cited 15 times

Online Publication Date: 8 April 2009

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Amorphous titanium oxide (a-TiOx:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 °C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of ∼ 1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiOx:OH film with porous structures.
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85.60.Jb Light-emitting devices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Jg Amorphous semiconductors; glasses
82.50.Hp Processes caused by visible and UV light
68.55.ag Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Highly selective left-handed transmission line loaded with split ring resonators and wires

A. L. Borja, J. Carbonell, V. E. Boria, and D. Lippens

Appl. Phys. Lett. 94, 143503 (2009); http://dx.doi.org/10.1063/1.3116647 (3 pages) | Cited 4 times

Online Publication Date: 8 April 2009

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The frequency selectivity of coplanar transmission lines loaded with split ring resonators and shunt strips was dramatically improved owing to a blueshift of the electrical plasma frequency by oversizing the strip width. Beyond a higher rejection level, which was expected as a consequence of the deepening of the forbidden gap between the left- and right-handed dispersion branches, a huge enhancement in the loaded Q quality factors, while maintaining low insertion losses were also pointed out. This Q factor improvement was a consequence of a decrease in the coupling between the resonators and the transmission line.
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84.40.Az Waveguides, transmission lines, striplines

A polarizer-free three step switch using distinct dye-doped liquid crystal gels

Yi-Hsin Lin and Chih-Ming Yang

Appl. Phys. Lett. 94, 143504 (2009); http://dx.doi.org/10.1063/1.3111790 (3 pages) | Cited 7 times

Online Publication Date: 9 April 2009

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A polarizer-free three step switch using distinct dye-doped liquid crystal (LC) gels is demonstrated in reflective mode. By controlling the spatial distribution of the density of polymer networks, the distinct dye-doped LC gels can produce multiple states: bright, dark, and information states without patterning indium-tin oxide. The multiple states are generated by adapting different polymer network density in different display regions. The dark state is due to the combination of scattering and absorption. It can be further extended for a four step switch. The potential applications are decorative displays, electrically tunable iris, and electrically tunable low pass or high pass filter.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Efficiency improvement of blended poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 solar cells by nanoimprinting

C. F. Shih, K. T. Hung, J. W. Wu, C. Y. Hsiao, and W. M. Li

Appl. Phys. Lett. 94, 143505 (2009); http://dx.doi.org/10.1063/1.3117226 (3 pages) | Cited 21 times

Online Publication Date: 9 April 2009

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This work demonstrates the effects of nanoimprinting on poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (P3HT:PCBM)-blended organic solar cells at room temperature. Textured Si wafer was used as a stamp. Nanoimprinting significantly increased the open-circuit voltage, the short-circuit current, and the fill factor, increasing the power conversion efficiency by ∼ 50%. The fill factor contributed most to the cell efficiency. Upon nanoimprinting, not only the surface structure but also the applied pressure contributed to the performance of the device. The origin of the hydrostatic pressure-induced efficiency improvement was also investigated. The proposed approach has potential to be applied in the future to improve the efficiency of various organic solar cells.
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84.60.Jt Photoelectric conversion
81.16.Nd Micro- and nanolithography

Doping tuned rectifying properties in La2−xSrxCuO4/Nb:SrTiO3 heterojunctions

Y. F. Guo, X. Guo, M. Lei, L. M. Chen, W. H. Tang, P. G. Li, X. L. Fu, and L. H. Li

Appl. Phys. Lett. 94, 143506 (2009); http://dx.doi.org/10.1063/1.3115788 (3 pages) | Cited 5 times

Online Publication Date: 10 April 2009

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Here, we carried out a study on strontium doping effect on the rectifying properties of La2−xSrxCuO4 (LSCO)/NSTO heterojunctions. The intimate relationship between the change in electronic structure of LSCO and the variation of diffusion potential (Vd) of the junction supports opportunities for detecting Fermi level shift and superconducting gap evolution of LSCO upon hole doping. The results agree well to generally perceived viewpoints obtained by other methods. Even the suppression of Fermi level shift in the underdoped regime and weak-coupling d-wave BCS superconductivity behavior in the overdoped regime of LSCO are clearly exhibited by the tuned rectifying behaviors. This work not only reveals rich properties of LSCO/NSTO but also opens an alternative route to monitor the Fermi level and superconducting gap of high-temperature superconductors.
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74.25.Jb Electronic structure (photoemission, etc.)
74.20.Rp Pairing symmetries (other than s-wave)
74.62.Dh Effects of crystal defects, doping and substitution
61.72.U- Doping and impurity implantation
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