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6 Apr 2009

Volume 94, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 94, 141901 (2009); http://dx.doi.org/10.1063/1.3111813 (3 pages)

G. S. Huang (黄高山), S. Kiravittaya, V. A. Bolaños Quiñones, F. Ding (丁飞), M. Benyoucef, A. Rastelli, Y. F. Mei (梅永丰), and O. G. Schmidt
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Formation of magnetic grains in ferroelectric Pb[Zr0.6Ti0.4]O3 ceramics doped with Fe3+ above the solubility limit

Hans-Joachim Kleebe, Stefan Lauterbach, Laura Silvestroni, Hans Kungl, Michael J. Hoffmann, Emre Erdem, and Rüdiger-A. Eichel

Appl. Phys. Lett. 94, 142901 (2009); http://dx.doi.org/10.1063/1.3103313 (3 pages) | Cited 15 times

Online Publication Date: 6 April 2009

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The effect of excess iron-doping in piezoelectric lead-zirconate-titanate (PZT) on the microstructure was investigated by means of transmission electron microscopy in conjunction with electron diffraction and energy dispersive x-ray spectroscopy analysis. Electron paramagnetic resonance (EPR) spectroscopy has been used to characterize the site of the iron functional centers. A crystalline secondary magnetic phase formed upon sintering, magnetoplumbite (PbFe12O19), has been unequivocally identified. Furthermore, the phase assemblage observed in the Fe3+-doped PZT 60/40 sample could be correlated with an exchange-coupled resonance in the EPR spectra.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
61.72.up Other materials
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
75.80.+q Magnetomechanical effects, magnetostriction

Effect of conductivity of filler on the percolation threshold of composites

K. S. Deepa, S. Kumari Nisha, P. Parameswaran, M. T. Sebastian, and J. James

Appl. Phys. Lett. 94, 142902 (2009); http://dx.doi.org/10.1063/1.3115031 (3 pages) | Cited 12 times

Online Publication Date: 6 April 2009

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Polytetrafluoroethylene (PTFE)-silver composites were prepared and the influence of conductivity, particle size, and interfacial area of Ag particle on the percolative behavior were investigated. Silver particles of two different grain sizes (3.5 and 5 μm) were individually mixed with PTFE and the corresponding variations in the dielectric properties were studied. The composite containing Ag particles of size 3.5 μm showed the percolation at 7 vol %, while for Ag particles of size 5 μm, the percolation is at 10 vol %. In both cases near the percolation, the interparticle distances were in the range of ∼ 3.3–3.8 μm.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.20.-n Methods of materials synthesis and materials processing
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)

Impact of oxide defects on band offset at GeO2/Ge interface

M. Yang, R. Q. Wu, Q. Chen, W. S. Deng, Y. P. Feng, J. W. Chai, J. S. Pan, and S. J. Wang

Appl. Phys. Lett. 94, 142903 (2009); http://dx.doi.org/10.1063/1.3115824 (3 pages) | Cited 20 times

Online Publication Date: 6 April 2009

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High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2/Ge(001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [ M. Perego et al., Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas’ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004) ].
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73.20.-r Electron states at surfaces and interfaces
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.jd Vacancies
81.65.Mq Oxidation

Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

V. M. Voora, T. Hofmann, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert

Appl. Phys. Lett. 94, 142904 (2009); http://dx.doi.org/10.1063/1.3116122 (3 pages) | Cited 23 times

Online Publication Date: 7 April 2009

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We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3-ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO3 layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO3. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO3 conformed that the hysteresis is related to the ferroelectricity of BaTiO3. Time dependent resistance measurements reveal memory effects.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization

Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Chih-Ming Lin, Wen-chieh Shih, Ingram Yin-ku Chang, Pi-Chun Juan, and Joseph Ya-min Lee

Appl. Phys. Lett. 94, 142905 (2009); http://dx.doi.org/10.1063/1.3114403 (3 pages) | Cited 13 times

Online Publication Date: 8 April 2009

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Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2×10−7 A/cm2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The IDS-VGS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 104 s.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.50.Gk Non-volatile ferroelectric memories
84.30.Sk Pulse and digital circuits

Critical slowing down of relaxation dynamics near the Curie temperature in the relaxor Pb(Sc0.5Nb0.5)O3

Muhtar Ahart, Anwar Hushur, Yonghong Bing, Zuo-Guang Ye, Russell J. Hemley, and Seiji Kojima

Appl. Phys. Lett. 94, 142906 (2009); http://dx.doi.org/10.1063/1.3115765 (3 pages) | Cited 8 times

Online Publication Date: 8 April 2009

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Brillouin spectroscopy of Pb(Sc0.5Nb0.5)O3 single crystals reveals an order-disorder ferroelectric phase transition occurs at 110 °C upon cooling. A softening of the longitudinal acoustic (LA) mode is observed that can be attributed to the coupling between polar nanoregions and acoustic modes. A critical slowing down of the central peak, a feature of order-disorder ferroelectric phase transitions, is observed near Tc. The similarity in temperature dependences of the two kinds of relaxation times determined from the central peak and LA mode suggests that the changes in the central peak arise from local polarization fluctuations in the polar nanoregions.
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77.22.Gm Dielectric loss and relaxation
78.35.+c Brillouin and Rayleigh scattering; other light scattering
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film

N. M. Murari, R. Thomas, S. P. Pavunny, J. R. Calzada, and R. S. Katiyar

Appl. Phys. Lett. 94, 142907 (2009); http://dx.doi.org/10.1063/1.3116088 (3 pages) | Cited 14 times

Online Publication Date: 9 April 2009

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Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (ΔVFB) was investigated as a function of voltage sweep and frequency; ΔVFB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.Gk Non-volatile ferroelectric memories
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.J- Morphology of films

Enhanced magnetization and polarization in chemically modified multiferroic (1−x)BiFeO3–xDyFeO3 solid solution

W.-M. Zhu, L. W. Su, Z.-G. Ye, and W. Ren

Appl. Phys. Lett. 94, 142908 (2009); http://dx.doi.org/10.1063/1.3110971 (3 pages) | Cited 17 times

Online Publication Date: 10 April 2009

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In order to develop multiferroics with large magnetization and polarization, we have prepared the (1−x)BiFeO3–xDyFeO3 (BF-DF) solid solution and systematically studied its properties. A morphotropic phase transition from rhombohedral perovskite (R3c) to orthorhombic orthoferrite (Pbnm) was found at x around 0.1. The magnetic properties of BiFeO3 were improved by the introduction of Dy3+ on the perovskite A site. Chemically modified Bi0.9Dy0.1Fe1−xTixO3+x/2 ceramics by aliovalent ionic substitution of Ti4+ for Fe3+ with excess Bi2O3 exhibit weak ferromagnetism and a typical ferroelectric hysteresis loop with a large remnant polarization of 23 μC/cm2 at room temperature and a large saturated magnetization (Ms = 0.5 μB/f.u.) at 2 K. These properties entitle the BF-DF solid solution one of few multiferroic materials that exhibit both decent magnetization and electric polarization.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
81.20.-n Methods of materials synthesis and materials processing
77.80.Dj Domain structure; hysteresis
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
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