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Applied Physics Letters / Volume 94 / Issue 16 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 161101 (2009); http://dx.doi.org/10.1063/1.3120226 (3 pages)

Field dependent electroluminescence from amorphous Si/SiNx multilayer structure

Hengping Dong, Danqing Wang, Kunji Chen, Jian Huang, Hongcheng Sun, Wei Li, Jun Xu, and Zhongyuan Ma

Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China

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(Received 28 February 2009; accepted 27 March 2009; published online 20 April 2009)

We report field dependent electroluminescence (EL) from as-deposited amorphous Si/SiNx multilayer structure, where a-Si well layer thickness ranges from 1 to 4 nm, while SiNx barrier layer thickness is fixed at 3 nm. When the sample is applied by a low forward voltage Vbias (<6 V, i.e., 2.5 MV/cm), the dominant peak of EL is located at the lower energy region from 740 nm shifted to 660 nm with reducing the thickness of the a-Si well layer from 4 to 1 nm. However, under a high applied Vbias(>6 V), another EL band at the higher energy region is observed to be peaked at about 530 nm, which is independent of the well layer thickness. Photoluminescence (PL) investigation performed under optically pumped by the 325 nm line and the 488 nm line, respectively, also demonstrates the pump energy dependence of PL peaks. We interpreted these interesting phenomena of electrical and optical pump energy dependence of light emission by using different luminescence mechanisms in the a-Si/SiNx multilayer structure.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, elemental semiconductors, multilayers, noncrystalline structure, optical pumping, photoluminescence, quantum wells, silicon, silicon compounds

PACS

  • 78.60.Fi

    Electroluminescence

  • 78.55.Qr

    Amorphous materials; glasses and other disordered solids

  • 78.47.J-

    Ultrafast spectroscopy (<1 psec)

  • 81.07.St

    Quantum wells

  • 78.67.De

    Quantum wells

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3120226

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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