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Appl. Phys. Lett. 94, 161103 (2009); http://dx.doi.org/10.1063/1.3106055 (3 pages)

Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes

Takao Miyajima1, Hideki Watanabe1, Masao Ikeda1,2, and Hiroyuki Yokoyama2

1Advanced Materials Laboratories, Sony Corporation, 4-1-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
2New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aramaki-aza-aoba, Aoba-ku, Sendai, Miyagi 980-8579, Japan

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(Received 20 January 2009; accepted 25 February 2009; published online 20 April 2009)

Self-pulsations of 407 nm emitting GaN-based blue-violet laser diodes with bisectional (BS) electrodes were demonstrated by applying a reverse bias (VSA) to the subelectrode of the saturable absorber (SA) section. By increasing the injected current to the main electrode of the gain section with a reverse bias of VSA = −12 V, the optical pulses shortened to 30 ps. The optical peak output power was as high as 2.4 W with a pulse width of 30 ps and a repetition frequency of 0.9 GHz. This is so far the shortest pulse width from a self-pulsating BS GaN-based laser diode achieved by applying a reverse bias to the SA section.

© 2009 American Institute of Physics

EDITORIALLY RELATED

  1. Publisher's Note: “Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes” [Appl. Phys. Lett. 94, 161103 (2009)]
    Takao Miyajima et al.
    Appl. Phys. Lett. 95, 039902 (2009)APPLAB000095000003039902000001

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 42.65.Re

    Ultrafast processes; optical pulse generation and pulse compression

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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