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Applied Physics Letters / Volume 94 / Issue 16 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 161106 (2009); http://dx.doi.org/10.1063/1.3120224 (3 pages)

High-speed InGaAs/InP-based single-photon detector with high efficiency

Lilin Xu, E Wu, Xiaorong Gu, Yi Jian, Guang Wu, and Heping Zeng

State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China

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(Received 3 March 2009; accepted 27 March 2009; published online 21 April 2009)

An efficient single-photon detector at telecom wavelength of 1.55 μm was realized with an InGaAs/InP avalanche photodiode at −30 °C. By implementing a short gating pulse and optimizing the self-differencing circuit, a detection efficiency of 29.3% was achieved with an error count probability of 6% at the gating frequency of 200 MHz, paving the way for the high-efficiency and low-noise fast detection of the infrared single photons.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

avalanche photodiodes, gallium arsenide, III-V semiconductors, indium compounds, infrared detectors, photodetectors

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3120224

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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