APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 94 / Issue 16 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 161107 (2009); http://dx.doi.org/10.1063/1.3120222 (3 pages)

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder

T. K. Kim1, S. H. Kim1, S. S. Yang1, J. K. Son1, K. H. Lee1, Y. G. Hong1, K. H. Shim1, J. W. Yang1, K. Y. Lim1, S. J. Bae2, and G. M. Yang1

1Department of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea
2Optowell Co., Ltd., 308, Semiconductor Physics Research Center, 664-14, Dukjin-Dong, Dukjin-Gu, Jeonju 561-756, Republic of Korea

View MapView Map

(Received 17 January 2009; accepted 26 March 2009; published online 22 April 2009)

Surface-textured InGaN/GaN light-emitting diodes (LEDs) coated with transparent Al2O3 powder were fabricated by natural lithography combined with inductively coupled plasma etching. For surface texturing, 300 nm size Al2O3 powder is used as an etching mask by simply coating the surface using a spin-coating process. Also, the powders are left on the surface after surface texturing to further increase extraction efficiency. At 20 mA, the light output power of the textured indium tin oxide (ITO) InGaN/GaN LEDs coated with the Al2O3 powder is enhanced by ∼ 112% compared with the conventional nontextured ITO LED. The enhanced light output power is attributed to the improved extraction efficiency resulting from an overall decrease in the total internal reflection due to the textured surface and the Al2O3 powder coating.

© 2009 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, masks, nanofabrication, nanolithography, nanoparticles, photolithography, spin coating, sputter etching, surface texture, wide band gap semiconductors

PACS

  • 85.60.Jb

    Light-emitting devices

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 81.16.Nd

    Micro- and nanolithography

  • 52.77.Bn

    Etching and cleaning

  • 81.65.Cf

    Surface cleaning, etching, patterning

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3120222

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, J. Appl. Phys. 87, 4464 (2000)JAPIAU000087000009004464000001.

    C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, J. Appl. Phys. 93, 9383 (2003)JAPIAU000093000011009383000001.

    T. S. Kim, S. M. Kim, Y. H. Jang, and G. Y. Jung, Appl. Phys. Lett. 91, 171114 (2007)APPLAB000091000017171114000001.

    J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim, and K. -D. Lee, Appl. Phys. Lett. 91, 181109 (2007)APPLAB000091000018181109000001.

    Y. -K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, Appl. Phys. Lett. 91, 221107 (2007)APPLAB000091000022221107000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder
  2. High-speed InGaAs/InP-based single-photon detector with high efficiency
  3. Plasmonic Bloch oscillations in chirped metal-dielectric structures
  4. Surface plasmon enhanced photoconductance of gold nanoparticle arrays with incorporated alkane linkers
  5. Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes
Go to AIP Home
Copyright © American Institute of Physics
close