APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 94 / Issue 16 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 161109 (2009); doi:10.1063/1.3119321 (3 pages)

Defect reduction in (11math2) semipolar GaN grown on m-plane sapphire using ScN interlayers

C. F. Johnston, M. A. Moram, M. J. Kappers, and C. J. Humphreys

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom

View MapView Map

(Received 4 February 2009; accepted 25 March 2009; published online 22 April 2009)

The effect of ScN interlayer thickness on the defect density of (11math2) semipolar GaN grown on m-plane sapphire was studied by transmission electron microscopy. The interlayers comprised Sc metal deposited on a GaN seedlayer that was nitrided before GaN overgrowth by metal-organic vapor-phase epitaxy. Both interlayer thicknesses reduced the dislocation density by a factor of 100 to low-108 cm−2. The 8.5 nm interlayer produced regions that were free from basal plane stacking faults (BSF) and dislocations. The overall BSF density here was reduced by a factor of 5, to (6.49±0.07)×104 cm−1, without the need for an ex situ mask patterning step.

© 2009 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

dislocation density, gallium compounds, III-V semiconductors, masks, MOCVD, multilayers, sapphire, scandium compounds, semiconductor growth, stacking faults, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors

PACS

  • 68.65.Ac

    Multilayers

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 61.72.Nn

    Stacking faults and other planar or extended defects

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3119321

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. A. B. Miller, D. S. Chemala, T. C. Damen, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, Phys. Rev. B 32, 1043 (1985).

    R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 87, 231110 (2005)APPLAB000087000023231110000001.

    T. Gühne, Z. Bougrioua, P. Vennéguès M. Leroux, and M. Albrecht, J. Appl. Phys. 101, 113101 (2007)JAPIAU000101000011113101000001.

    H. Sato, R. B. Chung, H. Hirasawa, M. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 92, 221110 (2008)APPLAB000092000022221110000001.

    M. A. Moram, Y. Zhang, M. J. Kappers, Z. H. Barber, and C. J. Humphreys, Appl. Phys. Lett. 91, 152101 (2007)APPLAB000091000015152101000001.

    C. F. Johnston, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys.105, 073102 (2009)JAPIAU000105000007073102000001.

    M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002)APPLAB000081000007001201000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Defect reduction in (112) semipolar GaN grown on m-plane sapphire using ScN interlayers
  2. In situ stress evolution during magnetron sputtering of transition metal nitride thin films
  3. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
  4. First-principles studies of the effect of oxygen vacancies on the electronic structure and linear optical response of multiferroic BiFeO3
  5. In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films
Go to AIP Home
Copyright © American Institute of Physics
close