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Applied Physics Letters / Volume 94 / Issue 16 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 161111 (2009); http://dx.doi.org/10.1063/1.3120551 (3 pages)

Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices

O. Malis1, C. Edmunds1, M. J. Manfra2, and D. L. Sivco2

1Department of Physics, Binghamton University, Binghamton, New York 13902, USA
2Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974, USA

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(Received 6 February 2009; accepted 27 March 2009; published online 24 April 2009)

Strong near-infrared intersubband absorption is observed directly at room temperature in silicon-doped lattice-matched InAlN/GaN superlattices grown by molecular-beam epitaxy on GaN templates grown by hydride vapor-phase epitaxy. X-ray diffraction characterization of the heterostructures indicates excellent layer thickness uniformity and low interface roughness. For 2–4.5 nm quantum wells, the intersubband transition energies span the technologically relevant range between 2.3 and 2.9 μm. The experimental results are in good agreement with calculations of the transition energies using a conduction band offset of 1 eV and spontaneous polarization of 3 MV/cm.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, indium compounds, molecular beam epitaxial growth, semiconductor quantum wells, semiconductor superlattices, silicon, wide band gap semiconductors, X-ray diffraction

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3120551

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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