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Appl. Phys. Lett. 94, 161902 (2009); http://dx.doi.org/10.1063/1.3120768 (3 pages)

Doping and characterization of boron atoms in nanocrystalline silicon particles

Keisuke Sato1, Naoki Fukata1,2, and Kenji Hirakuri3

1World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
2PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
3Department of Electrical and Electronic Engineering, Tokyo Denki University, 2-2 Kandanishiki, Chiyoda, Tokyo 101-8457, Japan

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(Received 12 February 2009; accepted 28 March 2009; published online 20 April 2009)

Boron (B) doping into nanocrystalline-silicon (nc-Si) particles was achieved by cosputtering of Si chips/B chips/silica disk targets and subsequent annealing at 1100 °C. The average diameter of B-doped particles was less than 4.3 nm, and the content of B was about 14.3 at. %. The observation of EELS spectrum of B-K edge and x-ray photoelectron spectroscopy spectra of B 1s, and that of B local vibrational peaks and the Fano effect by micro-Raman scattering measurements clearly demonstrate that B atoms were doped and electrically activated in the particles, indicating the formation of electrically active p-type nc-Si particles.

© 2009 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 61.72.U-

    Doping and impurity implantation

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

  • 81.07.Bc

    Nanocrystalline materials

  • 82.45.Yz

    Nanostructured materials in electrochemistry

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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