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Appl. Phys. Lett. 94, 161902 (2009); http://dx.doi.org/10.1063/1.3120768 (3 pages)
Doping and characterization of boron atoms in nanocrystalline silicon particles
(Received 12 February 2009; accepted 28 March 2009; published online 20 April 2009)
© 2009 American Institute of Physics
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KEYWORDS and PACS
Keywords
annealing, boron, electron energy loss spectra, elemental semiconductors, nanoparticles, photoemission, semiconductor doping, silicon, sputtering, X-ray photoelectron spectra
PACS
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Doping and impurity implantation
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Kinetics of defect formation and annealing
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Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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Nanocrystalline materials
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Nanostructured materials in electrochemistry
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Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
ARTICLE DATA
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