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Appl. Phys. Lett. 94, 161903 (2009); http://dx.doi.org/10.1063/1.3122344 (3 pages)

Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN

L. Tsetseris1,2, S. Logothetidis1, and S. T. Pantelides2,3

1Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
2Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA
3Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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(Received 31 January 2009; accepted 30 March 2009; published online 20 April 2009)

Experimental data on the migration of Cu impurities in TiN and in similar diffusion-barriers used in electronic devices have led to conflicting suggestions about the underlying physical mechanisms. Here we use results of first-principles calculations, which are in agreement with measured activations energies, to elucidate the atomic-scale processes of moderate and rapid diffusion of Cu through the bulk and intergrain voids of TiN films, respectively. We also find that O and H impurities are fast diffusers in TiN. The results offer an assessment for the efficiency of TiN diffusion-barriers with respect to properties, such as nature of impurities, stoichiometry, and crystallinity.

© 2009 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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