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Applied Physics Letters / Volume 94 / Issue 16 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 94, 161907 (2009); http://dx.doi.org/10.1063/1.3124243 (3 pages)

In-plane anisotropy of polarized photoluminescence in M-plane (10math0) ZnO and MgZnO/ZnO multiple quantum wells

Hiroaki Matsui1 and Hitoshi Tabata1,2

1Department of Electronics Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
2Department of Bioengineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

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(Received 7 February 2009; accepted 1 April 2009; published online 22 April 2009)

Highly polarized photoluminescence (PL) from M-plane ZnO layers and MgZnO/ZnO quantum wells (QWs) grown on ZnO substrates were observed. The energy difference between PL peaks of E⊥c and E∥c corresponded to that between A- and C-excitonic transitions. The polarization degree (P = 0.43) at 300 K in QWs was slightly low due to confinement-induced admixture of the Pz orbital to A-excitonic states compared with the ZnO layers (P = 0.49). Furthermore, layers with anisotropic compressive strains also showed high polarization anisotropy (P = 0.55) at 300 K due to bounded excitonic emissions that reflected the selection rule.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

excitons, II-VI semiconductors, magnesium compounds, photoluminescence, semiconductor quantum wells, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3124243

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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