Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Hinkle, C. L.; Milojevic, M.; Brennan, B.; Sonnet, A. M.; Aguirre-Tostado, F. S.; Hughes, G. J.; Vogel, E. M.; Wallace, R. M.

doi:doi:10.1063/1.3120546

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Analysis of wave propagation and localization in periodic/disordered layered composite structures by a mass-spring model

The band structure and the displacement field of elastic waves in periodic/disordered layered composite structures of finite width are investigated by a simple mass-spring model. In the case of comparable stiffness, the density contrast plays a dominant role for the center layer disorder to obtain localized wave modes within the band gap. On the other hand, in the case of comparable density contrast, the number and the position of the localized modes can be adjusted by changing the stiffness of...

Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

Excellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7±0.1 eV was calculat...

The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaO_x (0.5 ≤ x ≤ 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga₂O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga₂O₃) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.

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KEYWORDS and PACS

Keywords

capacitors, Fermi level, gallium arsenide, III-V semiconductors, indium compounds, oxidation, passivation, wide band gap semiconductors, X-ray photoelectron spectra

PACS

84.32.Tt

Capacitors
81.65.Rv

Passivation
73.20.At

Surface states, band structure, electron density of states
79.60.Bm

Clean metal, semiconductor, and insulator surfaces

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3120546

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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