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20 Apr 2009

Volume 94, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 94, 161105 (2009); http://dx.doi.org/10.1063/1.3119666 (3 pages)

Artur R. Davoyan, Ilya V. Shadrivov, Andrey A. Sukhorukov, and Yuri S. Kivshar
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Electrical breakdown and ultrahigh electrical energy density in poly(vinylidene fluoride-hexafluoropropylene) copolymer

Xin Zhou, Xuanhe Zhao, Zhigang Suo, Chen Zou, James Runt, Sheng Liu, Shihai Zhang, and Q. M. Zhang

Appl. Phys. Lett. 94, 162901 (2009); http://dx.doi.org/10.1063/1.3123001 (3 pages) | Cited 25 times

Online Publication Date: 20 April 2009

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This paper investigates the electrical breakdown of a polar fluoropolymer, poly(vinylidene fluoride-hexafluoropropylene) which exhibits an exceptionally high discharged electrical energy density (>25 J/cm3). It is shown that above room temperature, the breakdown strength decreases with temperature. It is further shown that such a temperature dependence of breakdown strength is consistent with the electromechanical breakdown model by taking into consideration of the plastic deformation of semicrystalline polymers.
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77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
62.20.fq Plasticity and superplasticity
81.40.Lm Deformation, plasticity, and creep
68.60.Bs Mechanical and acoustical properties

Surface charge dynamics on ferroelectric PbZr0.48Ti0.52O3 films responding to the switching bias of electric force microscope

J. Y. Son, Geunhee Lee, and Y.-H. Shin

Appl. Phys. Lett. 94, 162902 (2009); http://dx.doi.org/10.1063/1.3124077 (3 pages) | Cited 5 times

Online Publication Date: 21 April 2009

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We investigated the role of surface charges in writing and reading ferroelectric bits on an epitaxial PbZr0.48Ti0.52O3 thin film by electric force microscopy (EFM). The sign of EFM surface potential was reversed within several hundred microseconds for 10 V. For a negative bias voltage of −10 V, EFM surface potential was reversed in several milliseconds. The different time scales of the EFM surface potential reversals originate from the screening of the ferroelectric polarization charges by the surface charges which pass over two different Schottky barriers depending on the applied bias polarity.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.37.-d Microscopy of surfaces, interfaces, and thin films
73.30.+y Surface double layers, Schottky barriers, and work functions

Nanometer resolution piezoresponse force microscopy to study deep submicron ferroelectric and ferroelastic domains

Yachin Ivry, DaPing Chu, and Colm Durkan

Appl. Phys. Lett. 94, 162903 (2009); http://dx.doi.org/10.1063/1.3105942 (3 pages) | Cited 14 times

Online Publication Date: 22 April 2009

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Understanding ferroelectricity at the deep submicron regime is desirable in utilizing it for next generation nonvolatile memory devices, medical imaging systems, and rf filters. Here we show how piezoresponse force microscopy can be enhanced (1 nm resolution). Using this method, we have investigated ferroelectric and ferroelastic domains at the deep submicron regime in polycrystalline lead zirconium titanate thin films. We demonstrate that in the clamped films, periodic pairs of 90° domains are stable even at 10 nm width, challenging recent predictions of minimum domain size, and suggesting ferroelectricity for high-density storage devices ( ≥ 10 Tbyte/in2).
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics

Byoung Hun Lee, Changyong Kang, Rino Choi, Hi-Deok Lee, and Gennadi Bersuker

Appl. Phys. Lett. 94, 162904 (2009); http://dx.doi.org/10.1063/1.3122924 (3 pages) | Cited 2 times

Online Publication Date: 23 April 2009

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The validity of the stress biases used in reliability studies of high-k dielectric is discussed by analyzing the stress biases used in previous works. For single layer dielectrics, stress biases near the time zero dielectric breakdown point have been used to reduce the test time. However, stacked dielectrics need a more careful approach to avoid overstress. We show that the majority of earlier work on the reliability of high-k dielectric used high electric field and those results may not be optimal for predicting intrinsic reliability characteristics. A simple guideline to avoid overstress is provided.
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77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films

Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy

C. M. Brooks, L. Fitting Kourkoutis, T. Heeg, J. Schubert, D. A. Muller, and D. G. Schlom

Appl. Phys. Lett. 94, 162905 (2009); http://dx.doi.org/10.1063/1.3117365 (3 pages) | Cited 31 times

Online Publication Date: 24 April 2009

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We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBE-grown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. Off-stoichiometry for both strontium-rich and strontium-poor compositions (i.e., Sr1+xTiO3+δ films with −0.2<x<0.2) results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, and film microstructure. The dependence of lattice spacing on nonstoichiometry is smaller for MBE-grown films than for homoepitaxial (100) Sr1+xTiO3+δ films prepared by pulsed-laser deposition or sputtering.
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68.55.jd Thickness
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang, Nevin P. Sherlock, Richard J. Meyer, Jr., and Thomas R. Shrout

Appl. Phys. Lett. 94, 162906 (2009); http://dx.doi.org/10.1063/1.3125431 (3 pages) | Cited 24 times

Online Publication Date: 24 April 2009

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Domain engineered 〈001〉 oriented relaxor-PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to “soft” piezoelectric ceramics. However, their characteristic low dielectric loss ( ≤ 0.5%) and strain-electric field hysteresis are reflective of “hard” piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈110〉 orientation. The high Q, together with high electromechanical coupling ( ∼ 0.9) for 〈110〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.
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77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
77.65.-j Piezoelectricity and electromechanical effects
61.50.-f Structure of bulk crystals

Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface

J. L. Lauer, J. L. Shohet, and Y. Nishi

Appl. Phys. Lett. 94, 162907 (2009); http://dx.doi.org/10.1063/1.3122925 (3 pages) | Cited 8 times

Online Publication Date: 24 April 2009

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We compare the charging response of rapid thermally annealed (800 and 1000 °C) 4 nm thick HfO2 to as-deposited HfO2 on Si by measuring the surface potential of the HfO2 layers after vacuum ultraviolet (VUV) irradiation with 11.6 eV photons. From VUV spectroscopy, we determined all HfO2 layers show the presence of oxygen-interstitial defects (OIDs). The electronic states of OID in HfO2 line up in energy with oxygen-deficient Si centers within the SiO2 interfacial layer. This implies charge exchange between OIDs within HfO2 and the O-deficient silicon centers within the SiO2 interfacial layer are very important for controlling the radiation-induced trapped charge in HfO2 dielectric stacks.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.jj Interstitials
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.40.-q Absorption and reflection spectra: visible and ultraviolet
77.55.-g Dielectric thin films

Dielectric properties and tunability of cubic pyrochlore Bi1.5MgNb1.5O7 thin films

S. W. Jiang, Y. R. Li, R. G. Li, N. D. Xiong, L. F. Tan, X. Z. Liu, and B. W. Tao

Appl. Phys. Lett. 94, 162908 (2009); http://dx.doi.org/10.1063/1.3126442 (3 pages) | Cited 4 times

Online Publication Date: 24 April 2009

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The Bi1.5MgNb1.5O7 thin films with cubic pyrochlore structure were prepared onto Pt-coated sapphire substrates by rf magnetron sputtering deposition from a stoichiometric target. Dielectric measurements indicated that the Bi1.5MgNb1.5O7 thin films exhibited low dielectric loss of ∼ 0.0018–0.004, medium dielectric constant of ∼ 86, and superior tunable dielectric properties at room temperature. A bias field of 1.6 MV/cm resulted in the maximum voltage tunability of 39%. A brief discussion is given on the enhanced tunability compared to Bi1.5ZnNb1.5O7 thin films. The low loss and superior tunability make Bi1.5MgNb1.5O7 thin films promising for potential tunable capacitor applications.
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77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering
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