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Appl. Phys. Lett. 94, 173118 (2009); http://dx.doi.org/10.1063/1.3127514 (3 pages)

Logic inverters composed of controlled depletion-mode and enhancement-mode ZnO nanowire transistors

Gunho Jo, Woong-Ki Hong, Jongsun Maeng, Minhyeok Choe, Woojin Park, and Takhee Lee

Department of Nanobio Materials and Electronics and Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

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(Received 12 November 2008; accepted 10 April 2009; published online 1 May 2009)

We demonstrate ZnO nanowire logic inverters consisting of n-channel depletion-mode (D-mode) transistors and n-channel enhancement-mode (E-mode) transistors that are selectively controlled by smooth- and corrugated-surface ZnO nanowires grown on two different types of substrates via a vapor transport method. Our inverter circuits, by combination of both D-mode and E-mode ZnO nanowire devices, show desired voltage transfer characteristics with a high gain and robust noise margin in a simple circuit design with less power dissipation, which makes them superior to logic inverters based on single-mode nanowire transistors.

© 2009 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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