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5 Jan 2009

Volume 94, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 94, 013102 (2009); http://dx.doi.org/10.1063/1.3062938 (3 pages)

Hao-Chih Yuan, Jonghyun Shin, Guoxuan Qin, Lei Sun, Pallab Bhattacharya, Max G. Lagally, George K. Celler, and Zhenqiang Ma
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Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Peng Chen, Winnie V. Chen, Paul K. L. Yu, Chak Wah Tang, Kei May Lau, Luke Mawst, Charles Paulson, T. F. Kuech, and S. S. Lau

Appl. Phys. Lett. 94, 012101 (2009); http://dx.doi.org/10.1063/1.3062848 (3 pages) | Cited 3 times

Online Publication Date: 6 January 2009

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Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferred surface flatness for device processing. After transfer, the dark current under the reverse bias increased by ∼1.5 times over that of the as-grown photodiodes at −1.5 V, while the photoinduced current was comparable to that of the as-grown sample. These results were discussed in terms of interactions between minority carriers and the remaining implantation-induced damage.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.Cf Surface cleaning, etching, patterning
61.72.uj III-V and II-VI semiconductors

Hydrogen sensing properties of a metamorphic high electron mobility transistor

Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu

Appl. Phys. Lett. 94, 012102 (2009); http://dx.doi.org/10.1063/1.3052698 (3 pages) | Cited 1 time

Online Publication Date: 6 January 2009

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Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis

Geckolike high shear strength by carbon nanotube fiber adhesives

Y. Maeno and Y. Nakayama

Appl. Phys. Lett. 94, 012103 (2009); http://dx.doi.org/10.1063/1.3050450 (3 pages) | Cited 13 times

Online Publication Date: 7 January 2009

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Carbon nanotube adhesives can adhere strongly to surfaces as a gecko does. The number of carbon nanotube layers is an important determinant of the contact area for adhesion. Balancing the catalyst ratio and buffer layer used for chemical vapor deposition processing controls the number of carbon nanotube layers and their distribution. The features of carbon nanotubes determine the shear strength of adhesion. Carbon nanotubes with a broad distribution of layers exhibit enhanced shear strength with equivalent adhesive capability to that of a natural Tokay Gecko (Gekko gecko)
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81.07.De Nanotubes
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
62.20.-x Mechanical properties of solids
68.35.Np Adhesion

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

A. Schleife, F. Fuchs, C. Rödl, J. Furthmüller, and F. Bechstedt

Appl. Phys. Lett. 94, 012104 (2009); http://dx.doi.org/10.1063/1.3059569 (3 pages) | Cited 29 times

Online Publication Date: 7 January 2009

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Using quasiparticle band structures based on modern electronic-structure theory, we calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite (AlN, GaN, InN, ZnO), and rhombohedral crystals (In2O3). For InN, CdO, ZnO, and also In2O3 the branch-point energies are located within the lowest conduction band. These predictions are in agreement with observations of surface electron accumulation (InN, CdO) or conducting behavior of the oxides (ZnO, In2O3). The results are used to predict natural band offsets for the materials investigated.
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71.20.Nr Semiconductor compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.25.+i Surface conductivity and carrier phenomena

Effects of impurity scattering on the quantized conductance of a quasi-one-dimensional quantum wire

J. C. Chen, Yiping Lin, Kuan Ting Lin, T. Ueda, and S. Komiyama

Appl. Phys. Lett. 94, 012105 (2009); http://dx.doi.org/10.1063/1.3067995 (3 pages) | Cited 11 times

Online Publication Date: 7 January 2009

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We report an experimental observation of how the presence of an impurity in a quasi-one-dimensional wire influences the quantized conductance. The impurity is a chemically etched nanohole, relative to which the walls of the wire can be tuned via external gate voltages. Depending on the positions of the sidewalls, resonance features are observed in the quantized conductance due to either the multiple scatterings between the impurity and the wall of wire or the channel interference. Meanwhile, the differential conductance exhibits the well-known half-plateau features in a single channel wire or saturates in a wire with coupled two channels.
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73.63.Nm Quantum wires
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Single-parameter quantized charge pumping in high magnetic fields

B. Kaestner, C. Leicht, V. Kashcheyevs, K. Pierz, U. Siegner, and H. W. Schumacher

Appl. Phys. Lett. 94, 012106 (2009); http://dx.doi.org/10.1063/1.3063128 (3 pages) | Cited 13 times

Online Publication Date: 7 January 2009

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We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.
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73.63.Kv Quantum dots

Observation of excited states in a graphene quantum dot

S. Schnez, F. Molitor, C. Stampfer, J. Güttinger, I Shorubalko, T. Ihn, and K. Ensslin

Appl. Phys. Lett. 94, 012107 (2009); http://dx.doi.org/10.1063/1.3064128 (3 pages) | Cited 43 times

Online Publication Date: 7 January 2009

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We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate on the scale of a flux quantum penetrating the dot area. For higher magnetic fields, the transition to the formation of Landau levels is observed. Estimates based on the linear energy-momentum relation of graphene give carrier numbers of the order of 10 for our device.
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71.10.Li Excited states and pairing interactions in model systems
73.21.La Quantum dots
73.40.Gk Tunneling
71.70.Di Landau levels
73.63.Kv Quantum dots

Silver-induced layer exchange for the low-temperature preparation of intrinsic polycrystalline silicon films

M. Scholz, M. Gjukic, and M. Stutzmann

Appl. Phys. Lett. 94, 012108 (2009); http://dx.doi.org/10.1063/1.3059560 (3 pages) | Cited 6 times

Online Publication Date: 8 January 2009

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The preparation of large grained continuous polycrystalline silicon layers by metal-induced crystallization is reported. The macroscopic layer exchange of an amorphous silicon precursor layer in contact with a silver layer was observed for temperatures below the softening point of glass. This process is quite similar to the well-known aluminum-induced layer exchange. However, due to the use of silver as a catalyst, the recrystallized layers are electrically intrinsic rather than highly doped with Al acceptors. The resulting polycrystalline silicon layers show a good crystalline quality as deduced from Raman scattering, x-ray diffraction, and UV-reflectance measurements.
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68.55.ag Semiconductors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
78.40.Ha Other nonmetallic inorganics
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Specific contact resistance at metal/carbon nanotube interfaces

Roderick Jackson and Samuel Graham

Appl. Phys. Lett. 94, 012109 (2009); http://dx.doi.org/10.1063/1.3067819 (3 pages) | Cited 17 times

Online Publication Date: 8 January 2009

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In this report, the specific contact resistance between a thin film single wall carbon nanotube electrode and a deposited silver contact was measured. The specific contact resistance was found to be 20 mΩ cm2, which is an order of magnitude higher than typically observed in standard Si photovoltaic technology. We demonstrate that when utilized as the transparent anode in organic photovoltaics, the specific contact resistance has the potential to induce non-negligible resistive power losses. Thus, specific contact resistance will adversely affect the performance of these systems and should therefore be addressed.
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73.40.Cg Contact resistance, contact potential
72.40.+w Photoconduction and photovoltaic effects

Impact of air exposure on the chemical and electronic structure of ZnO:Zn3N2 thin films

M. Bär, K.-S. Ahn, S. Shet, Y. Yan, L. Weinhardt, O. Fuchs, M. Blum, S. Pookpanratana, K. George, W. Yang, J. D. Denlinger, M. Al-Jassim, and C. Heske

Appl. Phys. Lett. 94, 012110 (2009); http://dx.doi.org/10.1063/1.3056638 (3 pages) | Cited 4 times

Online Publication Date: 8 January 2009

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The chemical and electronic surface structure of ZnO:Zn3N2 (ZnO:N) thin films with different N contents was investigated by soft x-ray emission spectroscopy. Upon exposure to ambient air (in contrast to storage in vacuum), the chemical and electronic surface structure of the ZnO:N films changes substantially. In particular, we find that the Zn3N2/(Zn3N2+ZnO) ratio decreases with exposure time and that this change depends on the initial N content. We suggest a degradation mechanism based on the reaction of the Zn3N2 content with atmospheric humidity.
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68.55.-a Thin film structure and morphology
68.35.bg Semiconductors
71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
78.70.En X-ray emission spectra and fluorescence

Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance

I. Ionica, I. Savin, W. Van Den Daele, T. Nguyen, X. Mescot, and S. Cristoloveanu

Appl. Phys. Lett. 94, 012111 (2009); http://dx.doi.org/10.1063/1.3030987 (3 pages) | Cited 6 times

Online Publication Date: 9 January 2009

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Pseudo-metal-oxide-semiconductor field-effect transistor (Ψ-MOSFET) is a simple and efficient technique for characterizing electrical properties of silicon-on-insulator wafers. The primary condition for reliable parameter extraction is to achieve ohmic contacts between Ψ-MOSFET probes and silicon film. This paper brings experimental arguments on the probe-pressure impact on contact nature, series resistance, and carrier mobility. The specificity of our study consists of the topographical analysis (by atomic force microscopy) of craters induced by the probes. We correlate the probe-pressure with morphology parameters (size of craters) and electrical parameters (series resistance, mobility). For higher pressures, contacts are improved, changing from Schottky-like to ohmic-like.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices

Photoluminescence intensity modulation by charge carrier injection in silicon nanocrystals at room temperature

A. Lacombe, F. Beaudoin, D. Koshel, D. Barba, F. Martin, and G. G. Ross

Appl. Phys. Lett. 94, 012112 (2009); http://dx.doi.org/10.1063/1.3067864 (3 pages) | Cited 3 times

Online Publication Date: 9 January 2009

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Hysteretic intensity modulation of the photoluminescence (PL) of silicon nanocrystals (Si-NCs) embedded in silicon oxide (SiO2) is observed in metal-oxide-semiconductor (MOS) structures at room temperature during gate voltage sweeps of ±3 V. This PL intensity modulation is correlated with simultaneous current density measurements in the different operating regimes of these MOS devices. In particular, PL intensity enhancement is shown to result from electron injection into the oxide. The different mobilities of the charge carriers in SiO2 and the competing effects of charge trapping in the Si-NC and the surrounding oxide defects are used to explain the observed PL modulation.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
72.20.Fr Low-field transport and mobility; piezoresistance
78.55.Ap Elemental semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.63.Bd Nanocrystalline materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Controlling high-mobility conduction in SrTiO3 by oxide thin film deposition

G. Herranz, M. Basletić, O. Copie, M. Bibes, A. N. Khodan, C. Carrétéro, E. Tafra, E. Jacquet, K. Bouzehouane, A. Hamzić, and A. Barthélémy

Appl. Phys. Lett. 94, 012113 (2009); http://dx.doi.org/10.1063/1.3063026 (3 pages) | Cited 14 times

Online Publication Date: 9 January 2009

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SrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacancies at low concentrations ( ≥ 1016 cm−3). We show that the vacancy concentration in the SrTiO3 single crystal substrates could be controllably tuned by changing the thickness of oxide films (deposited by pulsed laser deposition at high temperature and low oxygen pressure). The obtained variation in the carrier density strongly influences the transport properties. The quantitative analysis of the experimental results leads toward new and accurate strategies for the design of multifunctional oxide heterostructures for electronics and spintronics.
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81.15.Fg Pulsed laser ablation deposition
68.55.aj Insulators
61.72.jd Vacancies
72.80.Sk Insulators
71.55.Ht Other nonmetals
72.20.Ht High-field and nonlinear effects

Modeling of negatively charged states at the Ge surface and interfaces

P. Tsipas and A. Dimoulas

Appl. Phys. Lett. 94, 012114 (2009); http://dx.doi.org/10.1063/1.3068497 (3 pages) | Cited 30 times

Online Publication Date: 9 January 2009

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Modeling based on surface charge neutrality predicts that the Ge surface tends to be p-type, irrespective of the bulk conductivity. This is a consequence of the fact that the Ge band gap is small and the charge neutrality level lies low in the gap very close to the valence band, probably determined by low-lying unpassivated surface dangling bond acceptors or other defects. According to the model, the acceptor defects build negative charge, inverting the surface of n-type Ge at no gate bias for low doping concentration (<1016 cm−3) and moderate or high interface state densities (>5×1011 eV−1 cm−2). This is predicted to cause undesired positive threshold voltage shift in the range of 0.2–0.4 V in Ge p-channel field effect transistors. The model also predicts that inversion in n-channel field effect transistors is inhibited, which could be related to the observed poor performance of these devices.
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73.20.At Surface states, band structure, electron density of states
72.80.Cw Elemental semiconductors
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
85.30.Tv Field effect devices
73.40.-c Electronic transport in interface structures
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