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5 Jan 2009

Volume 94, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 94, 013102 (2009); http://dx.doi.org/10.1063/1.3062938 (3 pages)

Hao-Chih Yuan, Jonghyun Shin, Guoxuan Qin, Lei Sun, Pallab Bhattacharya, Max G. Lagally, George K. Celler, and Zhenqiang Ma
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High efficiency blue phosphorescent organic light emitting diodes using a simple device structure

Soon Ok Jeon, Kyoung Soo Yook, Chul Woong Joo, and Jun Yeob Lee

Appl. Phys. Lett. 94, 013301 (2009); http://dx.doi.org/10.1063/1.3046288 (3 pages) | Cited 31 times

Online Publication Date: 5 January 2009

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High efficiency blue phosphorescent organic light emitting diodes have been developed by using a simple device structure. A derivative of spirobifluorene based phosphine oxide was used both as a host and an electron transport layer with an exciton blocking function. A maximum quantum efficiency of 19.2% and a current efficiency of 37.2 cd/A were obtained by using a simple device structure without a hole blocking layer.
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85.60.Jb Light-emitting devices
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Light-controlled selective metal deposition on photopolymer films

Tsuyoshi Tsujioka and Ai Matsui

Appl. Phys. Lett. 94, 013302 (2009); http://dx.doi.org/10.1063/1.3064138 (3 pages) | Cited 5 times

Online Publication Date: 6 January 2009

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Fine metal patterning was performed by selective Mg deposition on photopolymers. Mg patterns with a minimum width of 5 μm were obtained by using maskless vacuum evaporation. The selective deposition originates in the difference of glass transition temperature, microscopically, of surface molecular motion between polymerized and nonpolymerized photopolymer surfaces. The difference between photoreactive small molecules and polymers was also discussed. The selective metal deposition method would be applied to a wide range of organic surfaces; this method showed great potential for the preparation of fine wiring for various organic electronic devices.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.am Polymers and organics
64.70.P- Glass transitions of specific systems
42.70.Jk Polymers and organics
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Towards efficient tin-doped indium oxide (ITO)-free inverted organic solar cells using metal cathodes

J. Meiss, M. K. Riede, and K. Leo

Appl. Phys. Lett. 94, 013303 (2009); http://dx.doi.org/10.1063/1.3059552 (3 pages) | Cited 32 times

Online Publication Date: 7 January 2009

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We present zinc phthalocyanine (ZnPc):C60 bulk-heterojunction top-illuminated organic solar cells using ultrathin metal layers as transparent top contacts. We show that solar cell performance sensitively depends on the interface and morphology of the cathode, which can be influenced by varying the composition and layer structure of the metal contact. We investigate various metal combinations, such as 3 nm Al/8 nm Ag and 7 nm Al/14 nm Ag, to illustrate the necessity to find a suitable combination of morphology and electrical and optical properties. Solar cells using standard materials and a 1 nm Al/14 nm Ag cathode exhibit promising efficiencies of over 2.2%.
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84.60.Jt Photoelectric conversion
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Correlation of on-state conductance with referenced electrochemical potential in ion gel gated polymer transistors

Yu Xia, JeongHo Cho, Bryan Paulsen, C. Daniel Frisbie, and Michael J. Renn

Appl. Phys. Lett. 94, 013304 (2009); http://dx.doi.org/10.1063/1.3058694 (3 pages) | Cited 10 times

Online Publication Date: 8 January 2009

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We report direct measurement of the electrochemical potential at organic semiconductor/gate dielectric interfaces in printed polymer transistors employing a gel electrolyte as the gate insulator. An oxidized silver wire reference electrode was embedded into the gel electrolyte, and its potential relative to the grounded source contact was measured simultaneously with the transistor transfer characteristics. The referenced turn-on voltages of transistors based on three common polymer semiconductors [(poly-3-hexylthiophene, poly(3,3‴-didodecylquaterthiophene), and poly(9,9′-dioctylfluorene-co-bithiophene)] were found to correlate with the reported highest occupied molecular orbital levels (ionization potentials) for these materials. Further, analysis of the transfer characteristics revealed a negative differential transconductance regime at high gate-induced carrier densities ( ∼ 1015 cm−2), which we attribute to a combination of band filling and a mobility lowering effect.
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85.30.Tv Field effect devices
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Integrated dye-sensitized solar cell module with conversion efficiency of 8.2%

Liyuan Han, Atsushi Fukui, Yasuo Chiba, Ashraful Islam, Ryoichi Komiya, Nobuhiro Fuke, Naoki Koide, Ryohsuke Yamanaka, and Masafumi Shimizu

Appl. Phys. Lett. 94, 013305 (2009); http://dx.doi.org/10.1063/1.3054160 (3 pages) | Cited 29 times

Online Publication Date: 8 January 2009

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We investigated an integrated dye-sensitized solar cell (DSC) module composed of a number of rectangular cells connected in series. Because neighboring cells are processed in reverse, the module is known as the W-contact module. It achieves a high active area of 85% by eliminating the interconnection between neighboring cells. By adjusting the transmittance of the Pt-coated counterelectrode, the TiO2 thickness, and the composition of the electrolyte, we achieved an overall energy conversion efficiency of 8.2% (aperture area of 25.45 cm2) as measured by a public test center under AM 1.5 irradiation. This sets a record for the confirmed efficiency of a DSC submodule.
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84.60.Jt Photoelectric conversion
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Organic semiconductor composites: Influence of additives on the transient photocurrent

Jonathan Day, Andrew D. Platt, Oksana Ostroverkhova, Sankar Subramanian, and John E. Anthony

Appl. Phys. Lett. 94, 013306 (2009); http://dx.doi.org/10.1063/1.3062850 (3 pages) | Cited 5 times

Online Publication Date: 9 January 2009

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We report on the effect of various guest molecules added to a functionalized anthradithiophene (ADT) host on photoexcited charge carrier dynamics in solution-deposited thin films, from ∼100 ps to >100 μs after photoexcitation with 100 fs laser pulses. An addition of 2 and 5 wt % of C60 to a fluorinated ADT derivative, ADT-TES-F, resulted in transient photocurrent amplitude enhancement by a factor of ∼3 and 10, respectively. In contrast, an addition of 10 wt % of another ADT derivative, ADT-TIPS-CN, or a functionalized pentacene derivative (TIPS pentacene) to ADT-TES-F led to a decrease in the amplitude by a factor of ∼3–4 and dramatically different photocurrent dynamics.
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73.50.Pz Photoconduction and photovoltaic effects
68.55.ag Semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.-r Electrical properties of specific thin films
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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Optical and electrical characteristics of Ag-doped perylene diimide derivative

Tien-Lung Chiu, Wei-Feng Xu, Chi-Feng Lin, Jiun-Haw Lee, Chun-Chieh Chao, and Man-Kit Leung

Appl. Phys. Lett. 94, 013307 (2009); http://dx.doi.org/10.1063/1.3068493 (3 pages) | Cited 7 times

Online Publication Date: 9 January 2009

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In this paper, a highly conductive and strongly absorptive organic thin film by doping Ag into N,N′-bis (2,6-di-isopropylphenyl)-1,7-bis (4-methoxy-phenyl) perylene-3,4,9,10-tetracarboxydiimide (MPPDI) was demonstrated. Strong absorption resulted from the broadband absorption of MPPDI at visible range and plasmon-enhanced absorption around 420 nm of Ag nanoparticles. Ag dopants in MPPDI acted as quenchers, which resulted in a dramatic decrease in photoluminescence intensity of MPPDI. Besides, J-V characteristics of Ag:MPPDI thin film changed from trapped-charge-limited current to Ohmic conduction with increasing Ag concentrations. Conductivity of 1.15×10−6 Ω cm was achieved when MPPDI/Ag = 5:1. This organic thin film has potential applications for low-reflectance organic light-emitting diode and organic photovoltaic device.
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78.55.Kz Solid organic materials
78.40.Me Organic compounds and polymers
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
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Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

Samarendra P. Singh, Prashant Sonar, Alan Sellinger, and Ananth Dodabalapur

Appl. Phys. Lett. 94, 013308 (2009); http://dx.doi.org/10.1063/1.3064160 (3 pages) | Cited 7 times

Online Publication Date: 9 January 2009

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We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.
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85.30.Tv Field effect devices
85.30.Pq Bipolar transistors
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