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Applied Physics Letters / Volume 94 / Issue 20 / DEVICE PHYSICS

Appl. Phys. Lett. 94, 203503 (2009); http://dx.doi.org/10.1063/1.3140439 (3 pages)

Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers

D. Salloch1, U. Wieser1, U. Kunze1, and T. Hackbarth2

1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
2DaimlerChrysler Forschungszentrum Ulm, Wilhelm-Runge-Straße 11, D-89081 Ulm, Germany

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(Received 14 April 2009; accepted 30 April 2009; published online 21 May 2009)

Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances RT to a maximum value of 470 Ω close to threshold voltage.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

ballistic transport, elemental semiconductors, Ge-Si alloys, rectification, semiconductor quantum wires, silicon, thermoelectric power

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3140439

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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